Patents by Inventor Menno Veldhorst
Menno Veldhorst has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11721725Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.Type: GrantFiled: February 24, 2022Date of Patent: August 8, 2023Assignees: Intel Corporation, Technische Universiteit DelftInventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
-
Patent number: 11721723Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.Type: GrantFiled: May 14, 2021Date of Patent: August 8, 2023Assignees: Intel Corporation, Technische Universiteit DelftInventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
-
Patent number: 11721748Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.Type: GrantFiled: June 8, 2021Date of Patent: August 8, 2023Assignees: Intel Corporation, Technische Universiteit DelftInventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
-
Publication number: 20220181445Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.Type: ApplicationFiled: February 24, 2022Publication date: June 9, 2022Applicants: Intel Corporation, Technische Universiteit DelftInventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
-
Patent number: 11322591Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.Type: GrantFiled: June 24, 2017Date of Patent: May 3, 2022Assignee: Intel CorporationInventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
-
Publication number: 20210296473Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.Type: ApplicationFiled: June 8, 2021Publication date: September 23, 2021Applicants: Intel Corporation, Technische Universiteit DelftInventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
-
Publication number: 20210280676Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.Type: ApplicationFiled: May 14, 2021Publication date: September 9, 2021Applicants: Intel Corporation, Technishce Universiteit DelftInventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
-
Patent number: 11063138Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.Type: GrantFiled: June 24, 2017Date of Patent: July 13, 2021Assignee: Intel CorporationInventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
-
Patent number: 11038021Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.Type: GrantFiled: June 24, 2017Date of Patent: June 15, 2021Assignee: Intel CorporationInventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
-
Patent number: 10692924Abstract: The present disclosure provides a scalable architecture for an advanced processing apparatus for performing quantum processing. The architecture is based on an all-silicon CMOS fabrication technology. Transistor-based control circuits, together with floating gates, are used to operate a two-dimensional array of qubits. The qubits are defined by the spin states of a single electron confined in a quantum dot.Type: GrantFiled: August 5, 2016Date of Patent: June 23, 2020Assignee: NewSouth Innovations Pty LimitedInventors: Andrew Dzurak, Menno Veldhorst, Chih-Hwan Henry Yang
-
Publication number: 20200176569Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.Type: ApplicationFiled: June 24, 2017Publication date: June 4, 2020Applicants: Intel Corporation, Technische Universiteit DelftInventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
-
Publication number: 20200161455Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.Type: ApplicationFiled: June 24, 2017Publication date: May 21, 2020Applicants: Intel Corporation, Technische Universiteit DelftInventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
-
Publication number: 20200135864Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.Type: ApplicationFiled: June 24, 2017Publication date: April 30, 2020Applicants: Intel Corporation, Technische Universiteit DelftInventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
-
Publication number: 20180226451Abstract: The present disclosure provides a scalable architecture for an advanced processing apparatus for performing quantum processing. The architecture is based on an all-silicon CMOS fabrication technology. Transistor-based control circuits, together with floating gates, are used to operate a two-dimensional array of qubits. The qubits are defined by the spin states of a single electron confined in a quantum dot.Type: ApplicationFiled: August 5, 2016Publication date: August 9, 2018Inventors: Andrew Dzurak, Menno Veldhorst, Chih-Hwan Henry Yang
-
Patent number: 9886668Abstract: A processing element for an advanced processing apparatus. The processing element comprises a silicon-insulator interface and a confining arrangement for confining one or more quantum dots in the semiconductor. The processing element has also a control arrangement for controlling a quantum property of the one or more quantum dots and operate the one or more quantum dots as a qubit to perform quantum processing.Type: GrantFiled: June 6, 2014Date of Patent: February 6, 2018Assignee: NEWSOUTH INNOVATIONS PTY LIMITEDInventors: Andrew Dzurak, Menno Veldhorst, Chih-Hwan Henry Yang
-
Publication number: 20170147939Abstract: A processing element for an advanced processing apparatus. The processing element comprises a silicon-insulator interface and a confining arrangement for confining one or more quantum dots in the semiconductor. The processing element has also a control arrangement for controlling a quantum property of the one or more quantum dots and operate the one or more quantum dots as a qubit to perform quantum processing.Type: ApplicationFiled: June 6, 2014Publication date: May 25, 2017Inventors: Andrew Dzurak, Menno Veldhorst, Chih-Hwan Henry Yang