Patents by Inventor Menno Veldhorst

Menno Veldhorst has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11721725
    Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.
    Type: Grant
    Filed: February 24, 2022
    Date of Patent: August 8, 2023
    Assignees: Intel Corporation, Technische Universiteit Delft
    Inventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
  • Patent number: 11721723
    Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.
    Type: Grant
    Filed: May 14, 2021
    Date of Patent: August 8, 2023
    Assignees: Intel Corporation, Technische Universiteit Delft
    Inventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
  • Patent number: 11721748
    Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: August 8, 2023
    Assignees: Intel Corporation, Technische Universiteit Delft
    Inventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
  • Publication number: 20220181445
    Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.
    Type: Application
    Filed: February 24, 2022
    Publication date: June 9, 2022
    Applicants: Intel Corporation, Technische Universiteit Delft
    Inventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
  • Patent number: 11322591
    Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.
    Type: Grant
    Filed: June 24, 2017
    Date of Patent: May 3, 2022
    Assignee: Intel Corporation
    Inventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
  • Publication number: 20210296473
    Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.
    Type: Application
    Filed: June 8, 2021
    Publication date: September 23, 2021
    Applicants: Intel Corporation, Technische Universiteit Delft
    Inventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
  • Publication number: 20210280676
    Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.
    Type: Application
    Filed: May 14, 2021
    Publication date: September 9, 2021
    Applicants: Intel Corporation, Technishce Universiteit Delft
    Inventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
  • Patent number: 11063138
    Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.
    Type: Grant
    Filed: June 24, 2017
    Date of Patent: July 13, 2021
    Assignee: Intel Corporation
    Inventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
  • Patent number: 11038021
    Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.
    Type: Grant
    Filed: June 24, 2017
    Date of Patent: June 15, 2021
    Assignee: Intel Corporation
    Inventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
  • Patent number: 10692924
    Abstract: The present disclosure provides a scalable architecture for an advanced processing apparatus for performing quantum processing. The architecture is based on an all-silicon CMOS fabrication technology. Transistor-based control circuits, together with floating gates, are used to operate a two-dimensional array of qubits. The qubits are defined by the spin states of a single electron confined in a quantum dot.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: June 23, 2020
    Assignee: NewSouth Innovations Pty Limited
    Inventors: Andrew Dzurak, Menno Veldhorst, Chih-Hwan Henry Yang
  • Publication number: 20200176569
    Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.
    Type: Application
    Filed: June 24, 2017
    Publication date: June 4, 2020
    Applicants: Intel Corporation, Technische Universiteit Delft
    Inventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
  • Publication number: 20200161455
    Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.
    Type: Application
    Filed: June 24, 2017
    Publication date: May 21, 2020
    Applicants: Intel Corporation, Technische Universiteit Delft
    Inventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
  • Publication number: 20200135864
    Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.
    Type: Application
    Filed: June 24, 2017
    Publication date: April 30, 2020
    Applicants: Intel Corporation, Technische Universiteit Delft
    Inventors: Kanwaljit Singh, James S. Clarke, Menno Veldhorst, Lieven Mark Koenraad Vandersypen
  • Publication number: 20180226451
    Abstract: The present disclosure provides a scalable architecture for an advanced processing apparatus for performing quantum processing. The architecture is based on an all-silicon CMOS fabrication technology. Transistor-based control circuits, together with floating gates, are used to operate a two-dimensional array of qubits. The qubits are defined by the spin states of a single electron confined in a quantum dot.
    Type: Application
    Filed: August 5, 2016
    Publication date: August 9, 2018
    Inventors: Andrew Dzurak, Menno Veldhorst, Chih-Hwan Henry Yang
  • Patent number: 9886668
    Abstract: A processing element for an advanced processing apparatus. The processing element comprises a silicon-insulator interface and a confining arrangement for confining one or more quantum dots in the semiconductor. The processing element has also a control arrangement for controlling a quantum property of the one or more quantum dots and operate the one or more quantum dots as a qubit to perform quantum processing.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: February 6, 2018
    Assignee: NEWSOUTH INNOVATIONS PTY LIMITED
    Inventors: Andrew Dzurak, Menno Veldhorst, Chih-Hwan Henry Yang
  • Publication number: 20170147939
    Abstract: A processing element for an advanced processing apparatus. The processing element comprises a silicon-insulator interface and a confining arrangement for confining one or more quantum dots in the semiconductor. The processing element has also a control arrangement for controlling a quantum property of the one or more quantum dots and operate the one or more quantum dots as a qubit to perform quantum processing.
    Type: Application
    Filed: June 6, 2014
    Publication date: May 25, 2017
    Inventors: Andrew Dzurak, Menno Veldhorst, Chih-Hwan Henry Yang