Patents by Inventor Mercer Lusk Brugler

Mercer Lusk Brugler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for reducing contamination, copper reduction, and depositing a dielectric layer on a semiconductor device
    Patent number: 6790777
    Abstract: The present invention relates to a method for improving an interface of a semiconductor device. The method comprises providing a first and second substrate having an oxidized region, and establishing a first loading position in a first process chamber. The first and second substrates are consecutively inserted into the first process chamber and generally simultaneously processed, wherein the oxidized region is reduced by exposure to a first plasma. The first and second substrates are then consecutively removed and the first substrate is inserted into a second process chamber and subsequently processed. The second substrate is then inserted into the second process chamber and the first and second substrates are simultaneously processed. The first substrate is the removed, and the second substrate is processed again.
    Type: Grant
    Filed: November 6, 2002
    Date of Patent: September 14, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Glenn J. Tessmer, Ju-Ai Ruan, Mercer Lusk Brugler, Sarah Hartwig
  • Method for reducing contamination, copper reduction, and depositing a dielectric layer on a semiconductor device
    Publication number: 20040087149
    Abstract: The present invention relates to a method for improving an interface of a semiconductor device. The method comprises providing a first and second substrate having an oxidized region, and establishing a first loading position in a first process chamber. The first and second substrates are consecutively inserted into the first process chamber and generally simultaneously processed, wherein the oxidized region is reduced by exposure to a first plasma. The first and second substrates are then consecutively removed and the first substrate is inserted into a second process chamber and subsequently processed. The second substrate is then inserted into the second process chamber and the first and second substrates are simultaneously processed. The first substrate is the removed, and the second substrate is processed again.
    Type: Application
    Filed: November 6, 2002
    Publication date: May 6, 2004
    Inventors: Glenn J. Tessmer, Ju-Ai Ruan, Mercer Lusk Brugler, Sarah Hartwig