Patents by Inventor Merlin Green
Merlin Green has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10770480Abstract: Systems, methods and apparatus for coexistence of high voltage and low voltage devices and circuits on a same integrated circuit fabricated in silicon-on-insulator (SOI) technology are described. In particular, techniques for mitigating back gate effects are described, including using of resistive and/or capacitive couplings to control surface potentials at regions of a substrate used for the SOI fabrication proximate the high voltage and low voltage devices and circuits. In one case, an N-type implant is used to provide a high potential differential with respect to a substrate potential.Type: GrantFiled: May 24, 2019Date of Patent: September 8, 2020Assignee: pSemi CorporationInventors: Buddhika Abesingha, Simon Edward Willard, Alain Duvallet, Merlin Green, Sivakumar Kumarasamy
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Patent number: 10734982Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: GrantFiled: July 31, 2019Date of Patent: August 4, 2020Assignee: pSemi CorporationInventors: Buddhika Abesingha, Merlin Green
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Publication number: 20200028501Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: ApplicationFiled: July 31, 2019Publication date: January 23, 2020Inventors: Buddhika Abesingha, Merlin Green
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Publication number: 20190280011Abstract: Systems, methods and apparatus for coexistence of high voltage and low voltage devices and circuits on a same integrated circuit fabricated in silicon-on-insulator (SOI) technology are described. In particular, techniques for mitigating back gate effects are described, including using of resistive and/or capacitive couplings to control surface potentials at regions of a substrate used for the SOI fabrication proximate the high voltage and low voltage devices and circuits. In one case, an N-type implant is used to provide a high potential differential with respect to a substrate potential.Type: ApplicationFiled: May 24, 2019Publication date: September 12, 2019Inventors: Buddhika Abesingha, Simon Edward Willard, Alain Duvallet, Merlin Green, Sivakumar Kumarasamy
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Patent number: 10404245Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: GrantFiled: June 18, 2018Date of Patent: September 3, 2019Assignee: pSemi CorporationInventors: Buddhika Abesingha, Merlin Green
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Patent number: 10348293Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion (e.g. DC/DC) and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. According to an aspect, timing control of edges of a control signal to the high voltage semiconductor devices is provided by a basic edge delay circuit that includes a transistor, a current source and a capacitor. An inverter can be selectively coupled, via a switch, to an input and/or an output of the basic edge delay circuit to allow for timing control of a rising edge or a falling edge of the control signal.Type: GrantFiled: June 18, 2018Date of Patent: July 9, 2019Assignee: pSemi CorporationInventors: Buddhika Abesingha, Merlin Green, Gary Chunshien Wu
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Publication number: 20190140635Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion (e.g. DC/DC) and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. According to an aspect, timing control of edges of a control signal to the high voltage semiconductor devices is provided by a basic edge delay circuit that includes a transistor, a current source and a capacitor. An inverter can be selectively coupled, via a switch, to an input and/or an output of the basic edge delay circuit to allow for timing control of a rising edge or a falling edge of the control signal.Type: ApplicationFiled: June 18, 2018Publication date: May 9, 2019Inventors: Buddhika Abesingha, Merlin Green, Gary Chunshien Wu
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Patent number: 10147740Abstract: Methods and structures for mitigating back gate effects in high voltage and low voltage semiconductor devices of a same integrated circuit fabricated in a silicon-on-insulator technology are described. According to one aspect, one or more resistive couplings are used to control surface potentials at regions of a substrate used for the SOI fabrication proximate the high voltage and low voltage semiconductor devices. According to another aspect, an N-type implant that is biased through a resistive coupling is used to provide a high potential differential with respect to a substrate potential.Type: GrantFiled: October 31, 2017Date of Patent: December 4, 2018Assignee: pSemi CorporationInventors: Buddhika Abesingha, Simon Edward Willard, Alain Duvallet, Merlin Green, Sivakumar Kumarasamy
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Publication number: 20180302072Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: ApplicationFiled: June 18, 2018Publication date: October 18, 2018Inventors: Buddhika Abesingha, Merlin Green
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Patent number: 10044347Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: GrantFiled: December 14, 2017Date of Patent: August 7, 2018Assignee: pSemi CorporationInventors: Buddhika Abesingha, Merlin Green
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Publication number: 20180211972Abstract: Systems, methods and apparatus for coexistence of high voltage and low voltage devices and circuits on a same integrated circuit fabricated in silicon-on-insulator (SOI) technology are described. In particular, techniques for mitigating back gate effects are described, including using of resistive and/or capacitive couplings to control surface potentials at regions of a substrate used for the SOI fabrication proximate the high voltage and low voltage devices and circuits. In one case, an N-type implant is used to provide a high potential differential with respect to a substrate potential.Type: ApplicationFiled: October 31, 2017Publication date: July 26, 2018Inventors: Buddhika Abesingha, Simon Edward Willard, Alain Duvallet, Merlin Green, Sivakumar Kumarasamy
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Publication number: 20180175841Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: ApplicationFiled: December 14, 2017Publication date: June 21, 2018Inventors: Buddhika Abesingha, Merlin Green
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Patent number: 9912327Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: GrantFiled: January 11, 2016Date of Patent: March 6, 2018Assignee: Peregrine Semiconductor CorporationInventors: Buddhika Abesingha, Merlin Green
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Patent number: 9882554Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: GrantFiled: January 11, 2016Date of Patent: January 30, 2018Assignee: Peregrine Semiconductor CorporationInventors: Buddhika Abesingha, Merlin Green
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Patent number: 9847348Abstract: Systems, methods and apparatus for coexistence of high voltage and low voltage devices and circuits on a same integrated circuit fabricated in silicon-on-insulator (SOI) technology are described. In particular, techniques for mitigating back gate effects are described, including using of resistive and/or capacitive couplings to control surface potentials at regions of a substrate used for the SOI fabrication proximate the high voltage and low voltage devices and circuits. In one case, an N-type implant is used to provide a high potential differential with respect to a substrate potential.Type: GrantFiled: December 20, 2016Date of Patent: December 19, 2017Assignee: Peregrine Semiconductor CorporationInventors: Buddhika Abesingha, Simon Edward Willard, Alain Duvallet, Merlin Green, Sivakumar Kumarasamy
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Patent number: 9843311Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: GrantFiled: October 5, 2016Date of Patent: December 12, 2017Assignee: Peregrine Semiconductor CorporationInventors: Merlin Green, Mark L. Burgener, James W. Swonger, Buddhika Abesingha, Ronald Eugene Reedy
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Publication number: 20170117883Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: ApplicationFiled: October 5, 2016Publication date: April 27, 2017Inventors: Merlin Green, Mark L. Burgener, James W. Swonger, Buddhika Abesingha, Ronald Eugene Reedy
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Patent number: 9484897Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: GrantFiled: March 18, 2015Date of Patent: November 1, 2016Assignee: Peregrine Semiconductor CorporationInventors: Merlin Green, Mark L. Burgener, James W. Swonger, Buddhika Abesingha, Ronald Eugene Reedy
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Publication number: 20160277008Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: ApplicationFiled: March 18, 2015Publication date: September 22, 2016Inventors: Merlin Green, Mark L. Burgener, James W. Swonger, Buddhika Abesingha, Ronald Eugene Reedy
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Publication number: 20160277012Abstract: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.Type: ApplicationFiled: January 11, 2016Publication date: September 22, 2016Inventors: Buddhika Abesingha, Merlin Green