Abstract: This system employs writing of lithographic patterns with a shaped electron beam exposure system which minimizes the time wasted by workpiece positional requirements. The writing field contains an array of sub-fields written in a raster sequence. The large width of the writing field provided by the VAIL system reduces the number of mechanical scans required to write the pattern on the workpiece which further reduces the time required for workpiece positioning. When patterns are being superimposed over previously written patterns, registration is employed. This system includes a registration field confined to local areas on the workpiece, which is larger than the writing field, without requiring change in focus and without requiring the mechanical system comprising the X-Y work table to change speed during the registration and reregistration of the various fields on a semiconductor wafer or mask.

Abstract: The location of a beam of charged particles within a deflection field is determined by its orthogonal deflection voltages. With the location of the beam in the field, correction currents are supplied to a focus coil and to each of a pair of stigmator coils to correct for change of focal length and astigmatism due to the beam being deflected away from the center of its deflection field.

Abstract: A beam of charged particles has its alignment and brightness alternately controlled in accordance with the current of the beam. The measurements of the current and any corrections for alignment or brightness are made when the beam is not applied to a target.