Patents by Inventor Mervyn Deegan

Mervyn Deegan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GeH/Ar plasma chemistry for ion implant productivity enhancement
    Patent number: 11450504
    Abstract: A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: September 20, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Ajdin Sarajlic, Ronald Johnson, Nunzio V. Carbone, Peter Ewing, Mervyn Deegan
  • GeH/Ar plasma chemistry for ion implant productivity enhancement
    Patent number: 10923309
    Abstract: A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Ajdin Sarajlic, Ronald Johnson, Nunzio V. Carbone, Peter Ewing, Mervyn Deegan
  • GeH4/Ar Plasma Chemistry For Ion Implant Productivity Enhancement
    Publication number: 20210005416
    Abstract: A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Inventors: Bon-Woong Koo, Ajdin Sarajlic, Ronald Johnson, Nunzio V. Carbone, Peter Ewing, Mervyn Deegan
  • GeH4/Ar Plasma Chemistry For Ion Implant Productivity Enhancement
    Publication number: 20200144018
    Abstract: A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.
    Type: Application
    Filed: November 1, 2018
    Publication date: May 7, 2020
    Inventors: Bon-Woong Koo, Ajdin Sarajlic, Ronald Johnson, Nunzio V. Carbone, Peter Ewing, Mervyn Deegan