Abstract: An optical fiber graded index connector wherein a graded index rod is emped having a bore extending along the longitudinal axis thereof, the ends of the optical fibers to be connected being inserted into opposite ends of the rod bore and positioned to a focal length until a maximum power output is detected at the required destination for which the connection is made.

Abstract: A method of fabricating semiconductor devices having a long lifetime for the minority charge carriers by applying a voltage across one electrode composed of a piece of intrinsic semiconductor material and another electrode composed of an alloy including an impurity. The two electrodes are moved into proximity to cause an arc to be drawn therebetween which etches out a region of the semiconductor and in turn vaporizes the alloy which is deposited and implanted in the etched region to form a junction device. In one form of device produced in accordance with the process a series of regions alternately of opposite conductivity (P and N) type are formed on the semiconductor in spaced relationship and the device is positioned in electrical contact with the surface of a semiconductor dielectric waveguide.

Abstract: A single element line scanner applicable to millimeter or submillimeter w beam steering which includes a semiconductor waveguide made of a high resistivity bulk single crystal intrinsic semiconductor material such as silicon. Parallel spaced radiator elements are disposed on one major or top surface of the semiconductor waveguide transverse to the direction of wave propagation along the waveguide. Parallel spaced PIN diodes are disposed on the other or bottom major surface of the semiconductor waveguide transverse to the direction of wave propagation. The PIN diodes are spaced close enough to prevent radiation from escaping outwardly from the bottom major surface and are provided with a variable forward bias to produce a conductivity sheet. The conductivity sheet on the bottom major surface is electronically modulated as a function of the bias current for a given frequency and the variation of such a conductivity sheet changes the wavelengths in the semiconductor waveguide.

Abstract: A quasi-optical integrated circuit which makes use of a high resistivity k single crystal intrinsic semiconductor as a low loss quasi-optical wave transmission medium for millimeter and submillimeter waves having one or more circuit elements or devices disposed either at or near the surface of a portion of the semiconductor, or formed within a portion of either the semiconductor transmission medium or a portion of a high resistivity single crystal intrinsic semiconductor appendage to said semiconductor transmission medium. By varying the potential applied to said elements or devices, one can control either the phase or the amplitude of quasi-optical wave propagation along the semiconductor waveguide; moreover, solid state devices such as quasi-optical generators, mixers and detectors can be formed within the semiconductor wave transmission medium itself.