Patents by Inventor Mi Gyeong GWON

Mi Gyeong GWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ENTERIC-COATED GRANULAR COMPOSITION COMPRISING INGREDIENTS DERIVED FROM BEE VENOM AND LACTIC ACID BACTERIA
    Publication number: 20230210944
    Abstract: Proposed is an enteric-coated granular composition containing an ingredient derived from bee venom and lactic acid bacteria. The enteric-coated granular composition containing a bee venom-derived ingredient and lactic acid bacteria according to the present invention has an immune enhancing effect by increasing cytotoxic T cells, helper T cells, or B cells and the weight of lymph nodes; and a recovery effect on kidney injury by decreasing expression of cytokine TNF-?, IL-1? and NGAL.
    Type: Application
    Filed: October 21, 2022
    Publication date: July 6, 2023
    Inventors: Jung Keun PARK, Mi Ran KANG, Ji Hee LIM, Sir A LEE, Joo Yeon KIM, Choul Koo KIM, Kwan Kyu PARK, Hye Min GU, Seong Jae BAE, Mi Gyeong GWON, Hyun Jin AN
  • Semiconductor device having field insulation layer between two fins
    Patent number: 10032864
    Abstract: Semiconductor devices are provided. The semiconductor device includes a first fin and a second fin on a substrate and a field insulation layer between the first fin and the second fin. The field insulation layer include a first insulation layer and a second insulation layer on the first insulation layer and connected to the first insulation layer. The second insulation layer is wider than the first insulation layer. A ratio of a top width to a bottom width of each of the first fin and the second fin exceeds 0.5.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: July 24, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Seok Min, Mi Gyeong Gwon, Seong Jin Nam, Sug Hyun Sung, Young Hoon Song, Young Mook Oh
  • SEMICONDUCTOR DEVICE
    Publication number: 20170194426
    Abstract: Semiconductor devices are provided. The semiconductor device includes a first fin and a second fin on a substrate and a field insulation layer between the first fin and the second fin. The field insulation layer include a first insulation layer and a second insulation layer on the first insulation layer and connected to the first insulation layer. The second insulation layer is wider than the first insulation layer. A ratio of a top width to a bottom width of each of the first fin and the second fin exceeds 0.5.
    Type: Application
    Filed: October 13, 2016
    Publication date: July 6, 2017
    Inventors: Kyung Seok MIN, Mi Gyeong GWON, Seong Jin NAM, Sug Hyun SUNG, Young Hoon SONG, Young Mook OH