Patents by Inventor Mi-Hwa Lim
Mi-Hwa Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11862291Abstract: A memory device according to the present invention comprises: a memory cell array in which memory cells are connected to wordlines and bitlines in a matrix form; and a control circuit for programming the memory cells or controlling a read operation, according to a start address, a burst length, a latency length, and a program or read command which are transmitted from a host, wherein the control circuit may comprise: a pulse generation unit for generating register pulses and counter pulses in synchronization with an operation clock; and a counter that sets the start address in synchronization with the register pulses, counts the number of counter pulses corresponding to the sum of the latency length and the burst length, and increases an address from the start address to the sum of the start address and the burst length.Type: GrantFiled: December 3, 2020Date of Patent: January 2, 2024Inventors: Young Seung Kim, Mi Hwa Lim, Dong Min Lim
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Publication number: 20230015255Abstract: A memory device according to the present invention comprises: a memory cell array in which memory cells are connected to wordlines and bitlines in a matrix form; and a control circuit for programming the memory cells or controlling a read operation, according to a start address, a burst length, a latency length, and a program or read command which are transmitted from a host, wherein the control circuit may comprise: a pulse generation unit for generating register pulses and counter pulses in synchronization with an operation clock; and a counter that sets the start address in synchronization with the register pulses, counts the number of counter pulses corresponding to the sum of the latency length and the burst length, and increases an address from the start address to the sum of the start address and the burst length.Type: ApplicationFiled: December 3, 2020Publication date: January 19, 2023Inventors: Young Seung KIM, Mi Hwa LIM, Dong Min LIM
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Patent number: 8969713Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.Type: GrantFiled: January 27, 2012Date of Patent: March 3, 2015Assignee: Samsung SDI Co., Ltd.Inventors: Min-Seok Oh, Jung-Tae Kim, Nam-Kyu Song, Min Park, Yun-Seok Lee, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo, Dong-Uk Choi, Dong-Seop Kim, Byoung-June Kim
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Patent number: 8802972Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.Type: GrantFiled: June 2, 2009Date of Patent: August 12, 2014Assignee: Samsung SDI Co., Ltd.Inventors: Min-Seok Oh, Jung-Tae Kim, Nam-Kyu Song, Min Park, Yun-Seok Lee, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo, Dong-Uk Choi, Dong-Seop Kim, Byoung-June Kim
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Publication number: 20130045564Abstract: A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.Type: ApplicationFiled: October 19, 2012Publication date: February 21, 2013Inventors: Min PARK, Min-Seok OH, Jung-Tae KIM, Czang-Ho LEE, Myung-Hun SHIN, Byoung-Kyu LEE, Ku-Hyun KANG, Yuk-Hyun NAM, Seung-Jae JUNG, Mi-Hwa LIM, Joon-Young SEO
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Publication number: 20130037086Abstract: A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.Type: ApplicationFiled: October 18, 2012Publication date: February 14, 2013Inventors: Min PARK, Min-Seok OH, Jung-Tae KIM, Czang-Ho LEE, Myung-Hun SHIN, Byoung-Kyu LEE, Ku-Hyun KANG, Yuk-Hyun NAM, Seung-Jae JUNG, Mi-Hwa LIM, Joon-Young SEO
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Patent number: 8354585Abstract: A solar cell includes: a semiconductor substrate having a first surface and a second surface opposite the first surface; uneven patterns disposed on at least one of the first surface and the second surface of the semiconductor substrate; a first impurity layer disposed on the uneven patterns and which includes a first part having a first doping concentration and a second part having a second doping concentration greater than the first doping concentration; and a first electrode which contacts the second part of the first impurity layer and does not contact the first part of the first impurity layer.Type: GrantFiled: October 20, 2009Date of Patent: January 15, 2013Assignees: Samsung SDI Co., Ltd., Samsung Display Co., Ltd.Inventors: Min-Seok Oh, Byoung-Kyu Lee, Min Park, Czang-Ho Lee, Myung-Hun Shin, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo
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Patent number: 8329500Abstract: Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.Type: GrantFiled: December 18, 2009Date of Patent: December 11, 2012Assignees: Samsung Display Co., Ltd., Samsung SDI Co., Ltd.Inventors: Byoung-Kyu Lee, Se-Jin Chung, Byoung-June Kim, Czang-Ho Lee, Myung-Hun Shin, Min-Seok Oh, Ku-Hyun Kang, Yuk-Hyun Nam, Seung-Jae Jung, Min Park, Mi-Hwa Lim, Joon-Young Seo
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Patent number: 8294021Abstract: A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.Type: GrantFiled: June 17, 2009Date of Patent: October 23, 2012Assignees: Samsung Electronics Co., Ltd., Samsung SDI Co., Ltd.Inventors: Min Park, Min-Seok Oh, Jung-Tae Kim, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Ku-Hyun Kang, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo
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Publication number: 20120129295Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.Type: ApplicationFiled: January 27, 2012Publication date: May 24, 2012Applicants: SAMSUNG SDI CO., LTD., SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-Seok OH, Jung-Tae Kim, Nam-Kyu Song, Min Park, Yun-Seok Lee, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo, Dong-Uk Choi, Dong-Seop Kim, Byoung-June Kim
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Publication number: 20110143483Abstract: A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.Type: ApplicationFiled: February 24, 2011Publication date: June 16, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seung-Jae JUNG, Yuk-Hyun NAM, Czang-Ho LEE, Myung-Hun SHIN, Min-Seok OH, Byoung-Kyu LEE, Mi-Hwa LIM, Joon-Young SEO
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Patent number: 7932576Abstract: A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.Type: GrantFiled: March 30, 2009Date of Patent: April 26, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-Jae Jung, Yuk-Hyun Nam, Czang-Ho Lee, Myung-Hun Shin, Min-Seok Oh, Byoung-Kyu Lee, Mi-Hwa Lim, Joon-Young Seo
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Publication number: 20110011448Abstract: A thin film solar cell includes a plurality of a unit solar cell each including an active area and a non-active area. Each unit solar cell further includes a first electrode, a first active layer disposed on the first electrode, an interlayer disposed on the first active layer, a second active layer disposed on the interlayer, and a second electrode disposed on the second active layer. The active area includes a first portion where the interlayer is disposed, and a second portion where the interlayer is not disposed.Type: ApplicationFiled: December 28, 2009Publication date: January 20, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Mi-Hwa LIM, Bo-Hwan PARK
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Publication number: 20100159633Abstract: Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.Type: ApplicationFiled: December 18, 2009Publication date: June 24, 2010Inventors: Byoung-Kyu LEE, Se-Jin Chung, Byoung-June Kim, Czang-Ho Lee, Myung-Hun Shin, Min-Seok Oh, Ku-Hyun Kang, Yuk-Hyun Nam, Seung-Jae Jung, Min Park, Mi-Hwa Lim, Joon-Young Seo
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Publication number: 20100154869Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.Type: ApplicationFiled: June 2, 2009Publication date: June 24, 2010Inventors: Min-Seok Oh, Jung-Tae Kim, Nam-Kyu Song, Min Park, Yun-Seok Lee, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo, Dong-Uk Choi, Dong-Seop Kim, Byoung-June Kim
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Publication number: 20100126569Abstract: A solar cell includes: a semiconductor substrate having a first surface and a second surface opposite the first surface; uneven patterns disposed on at least one of the first surface and the second surface of the semiconductor substrate; a first impurity layer disposed on the uneven patterns and which includes a first part having a first doping concentration and a second part having a second doping concentration greater than the first doping concentration; and a first electrode which contacts the second part of the first impurity layer and does not contact the first part of the first impurity layer.Type: ApplicationFiled: October 20, 2009Publication date: May 27, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-Seok Oh, Byoung-Kyu Lee, Min Park, Czang-Ho Lee, Myung-Hun Shin, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo
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Publication number: 20100101633Abstract: A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.Type: ApplicationFiled: June 17, 2009Publication date: April 29, 2010Inventors: Min PARK, Min-Seok Oh, Jung-Tae Kim, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Ku-Hyun Kang, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo
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Publication number: 20100071745Abstract: In one or more embodiments of a photovoltaic device and a method of manufacturing the photovoltaic device, a first conductive layer, a first light-absorbing layer and a second conductive layer may be formed on a substrate, in sequence. A temperature for forming the second conductive layer may be lower than a temperature for forming the first conductive layer and a temperature for forming the first light-absorbing layer.Type: ApplicationFiled: April 9, 2009Publication date: March 25, 2010Inventors: Czang-Ho LEE, Byoung-Kyu Lee, Mi-Hwa Lim, Joon-Young Seo, Myung-Hun Shin, Min-Seok Oh, Ku-Hyun Kang, Yuk-Hyun Nam, Seung-Jae Jung, Min Park
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Publication number: 20100059111Abstract: A solar cell module includes a bottom module layer formed on a first substrate and absorbing a greater fraction of light energy in a first wavelength band than in a second wavelength band. The first wavelength band includes a shorter wavelength than any wavelength in the second wavelength band. A top module layer is formed on the bottom module layer to absorb a greater fraction of light energy in the second wavelength band than in the first wavelength band. A second substrate is formed on the top module layer. A reflecting filter is provided between the bottom module layer and the top module layer. The reflecting filter reflects a greater fraction of light energy in the first wavelength band than in the second wavelength band and transmits a greater fraction of light energy in the second wavelength band than in the first wavelength band.Type: ApplicationFiled: March 27, 2009Publication date: March 11, 2010Inventors: Myung-Hun Shin, Czang-Ho Lee, Min-Seok Oh, Ku-Hyun Kang, Yuk-Hyun Nam, Seung-Jae Jung, Min Park, Mi-Hwa Lim, Joon-Young Seo
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Publication number: 20100037940Abstract: A solar cell including a first semiconductor layer formed by sequentially stacking a positive (P) layer, an intrinsic (I) layer and a negative (N) layer, wherein the P layer comprises amorphous silicon carbide and at least one of the I and N layers comprises micro-crystalline silicon.Type: ApplicationFiled: May 19, 2009Publication date: February 18, 2010Inventors: Mi-Hwa Lim, Czang-Ho Lee, Joon-Young Seo, Myung-Hun Shin, Min-Seok Oh, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung