Abstract: Provided a liquid crystal composition including ceramide, a method of preparing the same, and a cosmetic composition including the same. According to a liquid crystal composition including various types of ceramide of an aspect and a method of preparing the same, the liquid crystal composition not only has high liquid crystal stability that liquid crystal is maintained even after 4 weeks at a high temperature, but also activities of increasing an amount of ceramide, increasing an expression level of aquaporin 3, increasing an amount of filaggrin, increasing an expression level of hyaluronic acid, increasing an expression level of loricrin, increasing an expression level of involucrin, and increasing a thickness of the skin, resulting in effects usefully available for amelioration of the skin conditions.

Abstract: A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.

Abstract: It is disclosed a blood glucose prediction system and method using saliva-based artificial intelligence deep learning technique.

Abstract: The present disclosure relates to a composition for treating or preventing alopecia including decursin, wherein when administered externally or orally, the decursin promotes secretion of KGF in hair follicle tissues, prevents apoptosis of hair follicle cells, and exhibits the effect of promoting hair growth, thereby being useful for the treatment or prevention of alopecia.

Abstract: The present invention provides a pharmaceutical composition or a food composition containing combined extracts comprising Schisandrae fructus, Eucommiae cortex and Lycii fructus as active ingredients for preventing or treating metabolic bone diseases. The composition of the present invention does not have side effects as it is a substance derived from natural sources; is effective on osteogenesis in ovariectomized mice; increases the bone content and the bone formation index of serum in real animal model; and reduces the bone resorption index so as to be useful for preventing or treating metabolic bone diseases.

Abstract: The present invention provides a pharmaceutical composition or a food composition containing combined extracts comprising Schisandrae fructus, Eucommiae cortex and Lycii fructus as active ingredients for preventing or treating metabolic bone diseases. The composition of the present invention does not have side effects as it is a substance derived from natural sources; is effective on osteogenesis in ovariectomized mice; increases the bone content and the bone formation index of serum in real animal model; and reduces the bone resorption index so as to be useful for preventing or treating metabolic bone diseases.

Abstract: A substrate having a first region and second regions disposed on two sides of the first region; a first group of conductive lines extending from the first region to the second regions on the substrate; a second group of conductive lines alternating with the first group of times and extending from the first region to the second regions on the substrate; interlayer insulating layers formed over the substrate; insulating layers formed in first open regions of the interlayer insulating layers and the first group of conductive lines in the second region; and contact plugs contacting second group of conductive line formed in second open regions of the interlayer insulating layer in the second region.

Abstract: A flash memory device includes an active region, drain contacts, a source contact line, and source contacts. The active regions are formed on a substrate extend at least from a source region to a drain region of the substrate. The drain contacts are formed over the active regions in the drain region. The source contact line is formed in the source region of the semiconductor substrate. The source contact line intersects the active regions and is continuously line-shaped. The source contact line includes source contacts formed at locations where the source contact line and the active regions intersect. The source contacts are zigzag-shaped and are separated from corresponding drain contacts by a given distance.

Abstract: A substrate having a first region and second regions disposed on two sides of the first region; a first group of conductive lines extending from the first region to the second regions on the substrate; a second group of conductive lines alternating with the first group of times and extending from the first region to the second regions on the substrate; interlayer insulating layers formed over the substrate; insulating layers formed in first open regions of the interlayer insulating layers and the first group of conductive lines in the second region; and contact plugs contacting second group of conductive line formed in second open regions of the interlayer insulating layer in the second region.

Abstract: A semiconductor device includes a code generator configured to generate a supplementary code with a value changing in response to a variation of an impedance code, a main driver configured to receive an output data and drive the received output data to a data output pad, wherein a driving force of the main driver is controlled according to the impedance code, and an auxiliary driver configured to receive the output data and drive the received output data to the data output pad, wherein a driving force of the auxiliary driver is controlled according to the supplementary code.

Abstract: A substrate having a first region and second regions disposed on two sides of the first region; a first group of conductive lines extending from the first region to the second regions on the substrate; a second group of conductive lines alternating with the first group of times and extending from the first region to the second regions on the substrate; interlayer insulating layers formed over the substrate; insulating layers formed in first open regions of the interlayer insulating layers and the first group of conductive lines in the second region; and contact plugs contacting second group of conductive line formed in second open regions of the interlayer insulating layer in the second region.

Abstract: A method for controlling uniformity of patterns formed in a semiconductor device includes obtaining simulation contours with respect to respective cases while controlling a size of an outermost pattern and determining a size of the outermost pattern in which uniform distribution values (3?) value of patterns included in the simulation contours satisfying specific conditions as a size of target outermost pattern.

Abstract: An integrated circuit includes a first ODT (On Die Termination) unit and an input buffer. The first ODT unit is configured to receive at least one pull-up code and at least one pull-down code and calibrate a resistance value for impedance matching of a first line transferring data. The input buffer is configured to buffer the data in response to a reference voltage level and drive input data. Herein, the driving of the input data is controlled in response to the pull-up code and the pull-down code.

Abstract: A data strobe signal output driver includes a trigger block, a predriver block, and a main driver block. The trigger block is configured to receive a first signal, a second signal, a first clock and a second clock, and to output a predrive signal based thereon. The predriver block is configured to receive the predrive signal, a driver off signal and a termination enable signal, and to output a first main drive signal and a second main drive signal based thereon. The main driver block is configured to output a data strobe signal based on the first and second main drive signals.

Abstract: A semiconductor memory device includes a pattern data generator configured to generate certain pattern data in a training operation mode, and an output driver configured to drive the pattern data to output training data with a slew rate corresponding to an external command in the training operation mode.

Abstract: A semiconductor device includes a code generator configured to generate a supplementary code with a value changing in response to a variation of an impedance code, a main driver configured to receive an output data and drive the received output data to a data output pad, wherein a driving force of the main driver is controlled according to the impedance code, and an auxiliary driver configured to receive the output data and drive the received output data to the data output pad, wherein a driving force of the auxiliary driver is controlled according to the supplementary code.

Abstract: A substrate having a first region and second regions disposed on two sides of the first region; a first group of conductive lines extending from the first region to the second regions on the substrate; a second group of conductive lines alternating with the first group of times and extending from the first region to the second regions on the substrate; interlayer insulating layers formed over the substrate; insulating layers formed in first open regions of the interlayer insulating layers and the first group of conductive lines in the second region; and contact plugs contacting second group of conductive line formed in second open regions of the interlayer insulating layer in the second region.

Abstract: An integrated circuit includes a first ODT (On Die Termination) unit and an input buffer. The first ODT unit is configured to receive at least one pull-up code and at least one pull-down code and calibrate a resistance value for impedance matching of a first line transferring data. The input buffer is configured to buffer the data in response to a reference voltage level and drive input data. Herein, the driving of the input data is controlled in response to the pull-up code and the pull-down code.

Abstract: A semiconductor memory device includes a pattern data generator configured to generate certain pattern data in a training operation mode, and an output driver configured to drive the pattern data to output training data with a slew rate corresponding to an external command in the training operation mode.

Abstract: A method for controlling uniformity of patterns formed in a semiconductor device includes obtaining simulation contours with respect to respective cases while controlling a size of an outermost pattern and determining a size of the outermost pattern in which uniform distribution values (3?) value of patterns included in the simulation contours satisfying specific conditions as a size of target outermost pattern.