Abstract: The present invention relates to a positive electrode active material and a lithium secondary battery using a positive electrode containing the positive electrode active material. More particularly, the present invention relates to a positive electrode active material that is able to solve a problem of increased resistance according to an increase in Ni content by forming a charge transport channel in a lithium composite oxide and a lithium secondary battery using a positive electrode containing the positive electrode active material.

Abstract: The present invention relates to: a novel 4-methoxy-2-phenethyl isoindolin-1-one derivative compound having the ability to promote the increase of nerve growth factor, the ability to promote the growth of nerve cells, and antineuritic activity; and a composition for preventing, improving and treating neurological diseases, comprising the same.

Abstract: The present invention relates to: a novel 6-methoxy-2-phenethyl isoindolin-1-one derivative compound having the ability to promote the increase of nerve growth factor, the ability to promote the growth of nerve cells, and antineuritic activity; and a composition for preventing, improving and treating neurological diseases, comprising the same.

Abstract: The present invention relates to a process for preparing an isoindolinone derivative represented by Formula 1, novel intermediates used for the process and a process for preparing the intermediates.

Abstract: Provided are a porous silicon-based anode active material including porous SiOx particles (0?x<2) having surfaces coated with an oxide layer, a method of preparing the same, and a lithium secondary battery including the porous silicon-based anode active material. Since the anode active material includes an oxide layer formed on the porous SiOx particles (0?x<2), a reactivity between the anode active material and an electrolyte solution may be reduced and, as a result, an electrical short circuit in an electrode may be minimized. Also, since a plurality of pores is included in surfaces or the surfaces and inside of the SiOx particles, a thickness change rate of the electrode generated during charge and discharge of a secondary battery may be reduced and lifetime characteristics may be improved.

Abstract: Provided are a porous silicon-based particle including a silicon (Si) or SiOx(0<x<2) particle, wherein the particle includes a plurality of nonlinear pores, and the nonlinear pores are formed as open pores in a surface of the particle, and a method of preparing the porous silicon-based particles. Porous silicon-based particles according to an embodiment of the present invention may be more easily dispersed in an anode active material slurry, may minimize side reactions with an electrolyte, and may reduce volume expansion during charge and discharge. Also, according to an embodiment of the present invention, the shape, form, and size of pores formed in the porous silicon-based particle may be controlled by adjusting the type of a metal catalyst, the concentration of the catalyst, and etching time.

Abstract: Provided are a porous silicon-based anode active material including porous SiOx particles (0?x<2) having surfaces coated with an oxide layer, a method of preparing the same, and a lithium secondary battery including the porous silicon-based anode active material. Since the anode active material includes an oxide layer formed on the porous SiOx particles (0?x<2), a reactivity between the anode active material and an electrolyte solution may be reduced and, as a result, an electrical short circuit in an electrode may be minimized. Also, since a plurality of pores is included in surfaces or the surfaces and inside of the SiOx particles, a thickness change rate of the electrode generated during charge and discharge of a secondary battery may be reduced and lifetime characteristics may be improved.

Abstract: Provided are a porous silicon-based particle including a silicon (Si) or SiOx (0<x<2) particle, wherein the particle includes a plurality of nonlinear pores, and the nonlinear pores are formed as open pores in a surface of the particle, and a method of preparing the porous silicon-based particles. Porous silicon-based particles according to an embodiment of the present invention may be more easily dispersed in an anode active material slurry, may minimize side reactions with an electrolyte, and may reduce volume expansion during charge and discharge. Also, according to an embodiment of the present invention, the shape, form, and size of pores formed in the porous silicon-based particle may be controlled by adjusting the type of a metal catalyst, the concentration of the catalyst, and etching time.

Abstract: Design rules for circuit patterns of a semiconductor device are identified, and schematic layouts of the circuit patterns are generated according to the design rules. Lithography friendly layout (LFL) circuit patterns are generated from the schematic layouts. Target layout circuit patterns are generated from the LFL circuit patterns. Optical proximity effect correction (OPC) is performed on the target layout circuit patterns to generate OPC circuit patterns. A mask is fabricated from the OPC circuit patterns, and may be used fabricate a semiconductor device.

Abstract: At least one pattern of a photomask is identified that has a likelihood of causing collapse of a microelectronic device feature that is formed using the photomask, due to surface tension of a solution that is applied to the feature during manufacture of the microelectronic device. The patterns of the photomask are then modified to reduce the likelihood of the collapse. The photomask may be formed and the photomask may be used to manufacture microelectronic devices. Related methods, systems, devices and computer program products are described.

Abstract: Disclosed herein is a composition for plasma electrolytic oxidation (PEO) treatment of magnesium alloy products, which contains a sodium hydroxide (NaOH) solution as a main component, the composition comprising, based on the weight of sodium hydroxide contained in the sodium hydroxide solution: 1-20 wt % of sodium fluoride (NaF); 1-15 wt % of trisodium phosphate (Na3PO4); 1-10 wt % of sodium pyrophosphate (Na4P2O7); 1-20 wt % of aluminum hydroxide (Al(OH)3); 1-20 wt % of sodium fluorosilicate (Na2SiF6); 1-10 wt % of potassium hydroxide (KOH); 1-15 wt % of potassium acetate (C2H3O2K); and 1-10 wt % of rare earth metal powder. The disclosed composition can form a firm, dense and uniform oxide film on the surface of a magnesium alloy product.

Abstract: At least one pattern of a photomask is identified that has a likelihood of causing collapse of a microelectronic device feature that is formed using the photomask, due to surface tension of a solution that is applied to the feature during manufacture of the microelectronic device. The patterns of the photomask are then modified to reduce the likelihood of the collapse. The photomask may be formed and the photomask may be used to manufacture microelectronic devices. Related methods, systems, devices and computer program products are described.

Abstract: Disclosed herein is a composition for plasma electrolytic oxidation (PEO) treatment of magnesium alloy products, which contains a sodium hydroxide (NaOH) solution as a main component, the composition comprising, based on the weight of sodium hydroxide contained in the sodium hydroxide solution: 1-20 wt % of sodium fluoride (NaF); 1-15 wt % of trisodium phosphate (Na3PO4); 1-10 wt % of sodium pyrophosphate (Na4P2O7); 1-20 wt % of aluminum hydroxide (Al(OH)3); 1-20 wt % of sodium fluorosilicate (Na2SiF6); 1-10 wt % of potassium hydroxide (KOH); 1-15 wt % of potassium acetate (C2H3O2K); and 1-10 wt % of rare earth metal powder. The disclosed composition can form a firm, dense and uniform oxide film on the surface of a magnesium alloy product.

Abstract: Design rules for circuit patterns of a semiconductor device are identified, and schematic layouts of the circuit patterns are generated according to the design rules. Lithography friendly layout (LFL) circuit patterns are generated from the schematic layouts. Target layout circuit patterns are generated from the LFL circuit patterns. Optical proximity effect correction (OPC) is performed on the target layout circuit patterns to generate OPC circuit patterns. A mask is fabricated from the OPC circuit patterns, and may be used fabricate a semiconductor device.

Abstract: Compositions and methods of treating or preventing hepatotoxicity utilizing asiatic acid derivatives of Formula 1 are disclosed.

Abstract: Asiatic acid derivatives having a modified A-ring, as represented by formula 1 are disclosed. ##STR1## Pharmaceutical compositions and methods of treating cancer and hepatotoxicity utilizing compounds of formula 1 are also disclosed.