Abstract: A method of fabricating an apparatus of fabricating a flat panel display device and method of fabricating flat panel display device is disclosed, which enables simplification of process by performing a patterning process without a photo process, the method for fabricating an apparatus of fabricating flat panel display device comprising, preparing a master mold including a thin film pattern, coating a liquid-type molding material including oligomer on the master mold, forming a soft mold including a groove provided with a pattern in a shape corresponding to the thin film pattern of the master mold and adhering the soft mold to a mold support plate, wherein the soft mold is adhered to the mold support plate by a covalent bonding in the interface between the oligomer and the mold support plate.

Abstract: Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.

Abstract: A fabricating method of a flat panel display device according to the present invention includes providing a thin film on a substrate; providing a soft mold having a groove and a projection on the thin film; contacting the projection of the soft mold and the thin film; and spreading a hydrophilic polymer resin on the thin film to pattern the thin film.

Abstract: A thin film transistor substrate and its fabrication method are discussed. According to an embodiment, the fabricating method of a thin film transistor substrate includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode, the gate insulating film having a groove in an area corresponding to an area where an active layer of a thin film transistor is to be formed; forming the active layer of the thin film transistor by use of a nanowire in the groove of the gate insulating film; and forming a source electrode and a drain electrode on the active layer.

Abstract: A liquid crystal display device includes a substrate, a gate line and a data line intersected with each other to define a pixel region on the substrate, a thin film transistor having a nanowire channel layer in an intersection region of the gate line and the data line, and a pixel electrode formed in the pixel region.

Abstract: An organic light emitting diode display device and a method of fabricating the same, the method comprising: forming a first electrode on a substrate; forming a hydrophilic partition wall having a plurality of openings on the first electrode; forming hydrophobic red, green and blue organic light emitting layers on the plurality of openings of the partition wall, respectively; and forming a second electrode on each of the hydrophobic red, green and blue organic light emitting layers, whereby thin films can be selectively formed by a surface treatment so as to improve color impurity at boundaries of red, green and blue patterns.

Abstract: A fabricating method for a flat panel display device having a thin film pattern over a substrate is disclosed. The fabricating method includes depositing a hydrophilic resin over a substrate and patterning the hydrophilic resin to form hydrophilic resin patterns over areas outside where thin film patterns are to be formed over the substrate. The fabricating method also includes depositing a hydrophobic nano powder thin film material over the substrate and between the hydrophilic resin patterns and removing the hydrophilic resin patterns to form hydrophobic nano powder thin film patterns over the substrate. Moreover, the fabricating method includes treating the hydrophobic nano powder thin film patterns to form the thin film pattern.

Abstract: A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively.

Abstract: A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.