Abstract: A method for fabricating a metal pattern in a semiconductor device includes forming a metal layer over a substrate, forming a hard mask layer over the metal layer, forming a sacrifice pattern over the hard mask layer, forming a spacer pattern on sidewalks of the sacrifice pattern, removing the sacrifice pattern, forming a hard mask pattern by etching the hard mask layer using the spacer pattern as an etch barrier, forming an etching protection layer over the hard mask pattern and on sidewalks of the hard mask pattern, and forming the metal pattern by performing primary and secondary etching processes on the metal layer using the etching protection layer as an etch barrier.

Abstract: A method for fabricating a semiconductor device includes forming an etch target layer including an insulation layer and a metal layer over a substrate, forming a hard mask layer pattern over the etch target layer, forming a protective layer pattern which includes a region having a shape of an overhang formed in an upper portion of the hard mask layer pattern, etching the insulation layer of the etch target layer by using the first region as an etch barrier, and etching the metal layer of the etch target layer by using the second region as an etch barrier.

Abstract: A method for fabricating a metal pattern in a semiconductor device includes forming a metal layer over a substrate, forming a hard mask layer over the metal layer, forming a sacrifice pattern over the hard mask layer, forming a spacer pattern on sidewalks of the sacrifice pattern, removing the sacrifice pattern, forming a hard mask pattern by etching the hard mask layer using the spacer pattern as an etch barrier, forming an etching protection layer over the hard mask pattern and on sidewalks of the hard mask pattern, and forming the metal pattern by performing primary and secondary etching processes on the metal layer using the etching protection layer as an etch barrier.