Patents by Inventor Mi-ran Moon

Mi-ran Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin-film transistor and method of manufacturing the same
    Patent number: 8158976
    Abstract: Example embodiments relate to thin-film transistors (TFT) and methods for fabricating the same. A thin-film transistor according to example embodiments may include a gate, a gate insulation layer, a channel layer including a first oxide semiconductor layer and a second oxide semiconductor layer, and a source and drain on opposite sides of the channel layer. The first oxide semiconductor layer may have relatively large crystal grains compared to the second oxide semiconductor layer.
    Type: Grant
    Filed: February 26, 2010
    Date of Patent: April 17, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-seok Son, Jang-yeon Kwon, Hyoung-sub Kim, Hoo-jeong Lee, Mi-ran Moon, Kyung Park
  • Thin-film transistor and method of manufacturing the same
    Publication number: 20110017990
    Abstract: Example embodiments relate to thin-film transistors (TFT) and methods for fabricating the same. A thin-film transistor according to example embodiments may include a gate, a gate insulation layer, a channel layer including a first oxide semiconductor layer and a second oxide semiconductor layer, and a source and drain on opposite sides of the channel layer. The first oxide semiconductor layer may have relatively large crystal grains compared to the second oxide semiconductor layer.
    Type: Application
    Filed: February 26, 2010
    Publication date: January 27, 2011
    Inventors: Kyoung-seok Son, Jang-yeon Kwon, Hyoung-sub Kim, Hoo-jeong Lee, Mi-ran Moon, Kyung Park