Abstract: A light emitting device including a plurality of light emitting diodes configured to emit light, a substrate electrically connected to the plurality of light emitting diodes, and a molding covering at least one surface of the plurality of light emitting diodes, in which the plurality of light emitting diodes includes a first light emitting diode configured to emit red light, a second light emitting diode configured to emit green light, and a third light emitting diode configured to emit blue light, and the molding includes one or more of a plurality of different color pigments and a plurality of different color dyes.

Abstract: An insecticide fumigator including a chemical cartridge mount on which a chemical cartridge is configured to be mounted, a heater disposed near the chemical cartridge mount and configured to heat the chemical cartridge such that an insecticide in the chemical cartridge is evaporated from a fumigation part of the chemical cartridge, a light source disposed near the fumigation part and configured to emit light having a first wavelength range to attract insects, and a housing provided with the chemical cartridge mount and receiving the heater and the light source, in which the light source includes a UV LED and a substrate on which the UV LED is mounted, and the housing has a light passage hole through which light emitted from the light source passes.

Abstract: An insect trap to entice and collect insects with UV light, and including a main body, a cross-fan, an insect filter, an insect collector detachably provided to the cross-fan, and a decoy UV LED installation unit coupled to a buttress above the main body and including a decoy UV LED module, in which the main body has an inlet port and a flow channel having an inclined shape and a curved shape extending from the inclined shape, the insect collector including an insect collector mesh through which air introduced into the main body is discharged, the decoy UV LED module includes at least one chip-on-board type UV LED chip or at least one UV LED package mounted on a support substrate, and the insect filter is detachably coupled to the inlet port and allows selective passage of insects therethrough.

Abstract: The present invention relates to an insect trap for attracting insects using a UV LED and sucking and capturing the attracted insects with a fan. The insect trap of the present invention comprises: a body; a suction part provided on one side of the body; a fan installed behind the suction part; at least one UV LED, provided on the body at least around the fan, for irradiating ultraviolet rays forward; a discharge part for discharging air sucked in by the suction part in a direction different from the air suction direction of the suction part; a duct which is an air passage from the suction part to the discharge part; a first streamlined inner surface, provided on an inner wall side opposite to a direction in which the duct extends on the basis of the suction part, for guiding air sucked into the suction part toward the duct; and an insect net, installed in the discharge part, for passing the air therethrough and capturing insects being sucked in together with the air.

Abstract: Disclosed herein is an insect trap adapted to entice and collect insects with UV light. The insect trap includes: a main body; a cross-fan mounted inside the main body; an insect collector detachably provided to a lower side of the cross-fan and collecting insets; and a decoy UV LED installation unit coupled to a buttress above the main body and provided with a decoy UV LED module, wherein the main body has an inlet port defined by a space open at an upper side thereof, and a cross-section of the main body corresponding to a facet of the cross-fan on which fan blades of the cross-fan move upwards with reference to a rotation direction of the cross-fan defines a first flow channel and a second flow channel extending perpendicularly from the first flow channel to the insect collector, in which the first flow channel is composed of an inclined shape gradually narrowed downwards from the inlet port and a curved shape extending in an arc shape from a lower end of the inclined shape.

Abstract: An insecticide fumigator including a chemical cartridge mount on which a chemical cartridge is configured to be mounted, a heater disposed near the chemical cartridge mount and configured to heat the chemical cartridge such that an insecticide in the chemical cartridge is evaporated from a fumigation part of the chemical cartridge, a light source disposed near the fumigation part and configured to emit light having a first wavelength range to attract insects, and a housing provided with the chemical cartridge mount and receiving the heater and the light source, in which the light source includes a UV LED and a substrate on which the UV LED is mounted, and the housing has a light passage hole through which light emitted from the light source passes.

Abstract: A UV light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure placed between the n-type contact layer and the p-type contact layer. The active area of the multi-quantum well structure includes barrier layers and well layers. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers disposed between the well layers has a smaller thickness than of the well layers and at least one of the barrier layers placed between the well layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer.

Abstract: The present invention relates to an insect trap for attracting insects using a UV LED and sucking and capturing the attracted insects with a fan. The insect trap of the present invention comprises: a body; a suction part provided on one side of the body; a fan installed behind the suction part; at least one UV LED, provided on the body at least around the fan, for irradiating ultraviolet rays forward; a discharge part for discharging air sucked in by the suction part in a direction different from the air suction direction of the suction part; a duct which is an air passage from the suction part to the discharge part; a first streamlined inner surface, provided on an inner wall side opposite to a direction in which the duct extends on the basis of the suction part, for guiding air sucked into the suction part toward the duct; and an insect net, installed in the discharge part, for passing the air therethrough and capturing insects being sucked in together with the air.

Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

Abstract: Disclosed are a substrate regeneration method and a regenerated substrate. The substrate regeneration method comprises preparing a substrate having a surface separated from an epitaxial layer. The separated surface includes a convex portion and a concave portion, and the convex portion is comparatively flatter than the concave portion. A crystalline restoration layer is grown on the separated surface. The crystalline restoration layer is grown on the convex portion. Furthermore, a surface roughness improvement layer is grown on the crystalline restoration layer, thereby providing a continuous surface. Accordingly, it is possible to provide a regenerated substrate, which has a flat surface, without using physical polishing or chemical etching technology.

Abstract: A UV light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including AlxGa(1-x)N on a substrate, forming a sacrificial layer including AlzGa(1-z)N on the first super-lattice layer, partially removing the sacrificial layer, forming an epitaxial layer on the sacrificial layer, and separating the substrate from the epitaxial layer, wherein the sacrificial layer includes voids, the substrate is separated from the epitaxial layer at the sacrificial layer, and forming an epitaxial layer includes forming an n-type semiconductor layer including n-type AluGa(1-u)N (0<u?z?x<1). With this structure, the light emitting device can emit UV light and be separated from the substrate.

Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

Abstract: Disclosed are a substrate regeneration method and a regenerated substrate. The substrate regeneration method comprises preparing a substrate having a surface separated from an epitaxial layer. The separated surface includes a convex portion and a concave portion, and the convex portion is comparatively flatter than the concave portion. A crystalline restoration layer is grown on the separated surface. The crystalline restoration layer is grown on the convex portion. Furthermore, a surface roughness improvement layer is grown on the crystalline restoration layer, thereby providing a continuous surface. Accordingly, it is possible to provide a regenerated substrate, which has a flat surface, without using physical polishing or chemical etching technology.

Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

Abstract: A UV light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including AlxGa(1-x)N on a substrate, forming a sacrificial layer including AlzGa(1-z)N on the first super-lattice layer, partially removing the sacrificial layer, forming an epitaxial layer on the sacrificial layer, and separating the substrate from the epitaxial layer, wherein the sacrificial layer includes voids, the substrate is separated from the epitaxial layer at the sacrificial layer, and forming an epitaxial layer includes forming an n-type semiconductor layer including n-type AluGa(1-u)N (0<u?z?x<1). With this structure, the light emitting device can emit UV light and be separated from the substrate.

Abstract: A method of fabricating a nitride substrate including preparing a growth substrate and disposing a sacrificial layer on the growth substrate. The sacrificial layer includes a nitride horizontal etching layer including an indium-based nitride and an upper nitride sacrificial layer formed on the nitride horizontal etching layer. The method of fabricating the nitride substrate also includes horizontally etching the nitride horizontal etching layer, forming at least one etching hole at least partially through the upper nitride sacrificial layer such that the at least one etching hole expands in the nitride horizontal etching layer in a horizontal direction during horizontal etching of the nitride horizontal etching layer, forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE) and separating the nitride epitaxial layer from the growth substrate at the nitride horizontal etching layer.

Abstract: Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of 365 nm to 309 nm.

Abstract: A method of fabricating a nitride substrate including preparing a growth substrate and disposing a sacrificial layer on the growth substrate. The sacrificial layer includes a nitride horizontal etching layer including an indium-based nitride and an upper nitride sacrificial layer formed on the nitride horizontal etching layer. The method of fabricating the nitride substrate also includes horizontally etching the nitride horizontal etching layer, forming at least one etching hole at least partially through the upper nitride sacrificial layer such that the at least one etching hole expands in the nitride horizontal etching layer in a horizontal direction during horizontal etching of the nitride horizontal etching layer, forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE) and separating the nitride epitaxial layer from the growth substrate at the nitride horizontal etching layer.

Abstract: A UV light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure placed between the n-type contact layer and the p-type contact layer. The active area of the multi-quantum well structure includes barrier layers and well layers. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers disposed between the well layers has a smaller thickness than of the well layers and at least one of the barrier layers placed between the well layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer.

Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.