Abstract: A thinner composition is effective in removing a variety of photoresists, and includes propylene glycol mono-methyl ether acetate, ethyl 3-ethoxy propionate and at least one of &ggr;-butyro lactone and propylene glycol mono-methyl ether. The thinner composition can selectively strip a photoresist coated on a backside and at an edge portion of a substrate, as well as a photoresist coated on a whole front surface of the substrate.

Abstract: A thinner composition is effective in removing a variety of photoresists, and includes propylene glycol mono-methyl ether acetate, ethyl 3-ethoxy propionate and at least one of &ggr;-butyro lactone and propylene glycol mono-methyl ether. The thinner composition can selectively strip a photoresist coated on a backside and at an edge portion of a substrate, as well as a photoresist coated on a whole front surface of the substrate.

Abstract: A photoresist stripper composition is made up of a mixture of an acetic acid ester, &ggr;-butyrolactone (GBL), and a non-acetate ester or a poly alkyl alcohol derivative. The acetic acid ester may be at least one of n-butyl acetate, amyl acetate, ethyl aceto-acetate, and isopropyl acetate. The non-acetate ester may be at least one of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP) and methyl-3-methoxy (MMP). The poly alkyl alcohol derivative may be at least one of propylene glycol monomethyl ester (PGME) and propylene glycol monomethyl ester acetate (PGMEA).

Abstract: A photoresist stripper composition is made up of a mixture of an acetic acid ester, &ggr;-butyrolactone (GBL), and a non-acetate ester or a poly alkyl alcohol derivative. The acetic acid ester may be at least one of n-butyl acetate, amyl acetate, ethyl aceto-acetate, and isopropyl acetate. The non-acetate ester may be at least one of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP) and methyl-3-methoxy (MMP). The poly alkyl alcohol derivative may be at least one of propylene glycol monomethyl ester (PGME) and propylene glycol monomethyl ester acetate (PGMEA).

Abstract: A photoresist stripper composition is formed of a mixture of acetone, &ggr;-butyrolactone, and ester solvent. A photoresist stripping method includes spraying the photoresist stripper composition over a substrate while rotating the substrate at a relatively low speed, so as to strip photoresist from the substrate. The rotation of the substrate is stopped for a short period of time, and thereafter the photoresist stripper composition is again sprayed over the substrate while rotating the substrate at a relatively high speed. Then, the substrate is rinsed with pure water.

Abstract: Thinner compositions for effectively removing photoresist. The thinner compositions may be used in reworking a semiconductor substrate or in rinsing semiconductor devices. The thinner composition may be a mixture of n-butyl acetate (n-BA) and ethyl acetate (EA), a mixture of n-butyl acetate (n-BA) and methyl methoxy propionate (MMP), or a mixture of n-butyl acetate (n-BA) and methyl ethyl ketone (MEK).

Abstract: A photoresist stripper composition is formed of a mixture of acetone, &ggr;-butyrolactone, and ester solvent. A photoresist stripping method includes spraying the photoresist stripper composition over a substrate while rotating the substrate at a relatively low speed, so as to strip photoresist from the substrate. The rotation of the substrate is stopped for a short period of time, and thereafter the photoresist stripper composition is again sprayed over the substrate while rotating the substrate at a relatively high speed. Then, the substrate is rinsed with pure water.

Abstract: A photoresist stripper composition is formed of a mixture of acetone, &ggr;-butyrolactone, and ester solvent. A photoresist stripping method includes spraying the photoresist stripper composition over a substrate while rotating the substrate at a relatively low speed, so as to strip photoresist from the substrate. The rotation of the substrate is stopped for a short period of time, and thereafter the photoresist stripper composition is again sprayed over the substrate while rotating the substrate at a relatively high speed. Then, the substrate is rinsed with pure water.

Abstract: In the fabrication of semiconductor devices, a method of forming a fine pattern on a semiconductor substrate includes the steps of exposing and developing a photoresist deposited on a film of a semiconductor substrate in order to remove selected portions of the photoresist, etching portions of the film left exposed when the selected portions of the photoresist are removed, and subsequently removing any of the photoresist remaining on the semiconductor substrate with dimethylacetamide, or a combination of monoethanolamine and dimethylsulfoxide. Such stripping solutions are capable of removing photoresists in the Deep-UV group as well as the conventionally used photoresists in the I-line group.

Abstract: Thinner compositions for effectively removing photoresist. The thinner compositions may be used in reworking a semiconductor substrate or in rinsing semiconductor devices. The thinner composition may be a mixture of n-butyl acetate (n-BA) and ethyl acetate (EA), a mixture of n-butyl acetate (n-BA) and methyl methoxy propionate (MMP), or a mixture of n-butyl acetate (n-BA) and methyl ethyl ketone (MEK).

Abstract: In the fabrication of semiconductor devices, a method of forming a fine pattern on a semiconductor substrate includes the steps of exposing and developing a photoresist deposited on a film of a semiconductor substrate in order to remove selected portions of the photoresist, etching portions of the film left exposed when the selected portions of the photoresist are removed, and subsequently removing any of the photoresist remaining on the semiconductor substrate with dimethylacetamide, or a combination of monoethanolamine and dimethylsulfoxide. Such stripping solutions are capable of removing photoresists in the Deep-UV group as well as the conventionally used photoresists in the I-line group.

Abstract: A thinner composition for removing photoresist, a rework method for wafers, and a method of manufacturing semiconductor devices are provided. The thinner composition is applied for removing excess photoresist coated on the edge side or back side of wafer. The thinner may be a mixture of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP), and .tau.-butyro lactone (GBL), or a mixture of ethyl lactate (EL), and ethyl-3-ethoxy propionate (EEP), or a mixture of ethyl lactate (EL), and ethyl-3-ethoxy propionate (EEP). The rework process is carried out, using the above thinner compositions, on the wafers having excess coated photoresist due to an etching failure. The method of manufacturing semiconductor devices includes a rinsing step for removing the excess coated photoresist on the edge side or back side of wafer by using the above thinner compositions.