Abstract: There is provided an RF sputtering apparatus for controlling an atomic layer of a thin film. The RF sputtering apparatus includes: a sputtering main body including a substrate, a target facing the substrate, and a chamber for performing a sputtering process to deposit the target on the substrate; a power supply unit connected to the target of the sputtering main body via a network to apply RF power; a roughing pump unit for forming vacuum inside the chamber of the sputtering main body; and a gas supply unit for supplying reaction gas to the inside of the chamber. A power cable for supplying a power source to the power supply unit is formed with a single crystal copper wire.