Patents by Inventor Mi-Youn Kim
Mi-Youn Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11941415Abstract: Provided are an audio reproduction device and a method of controlling an operation thereof, which involve a user interface that allows a user to more effectively control various functions. The audio reproduction device includes a processor configured to obtain function information of the audio reproduction device corresponding to a user input received using mapping information for mapping between a user input received based on at least one of at least one wheel region rotatable clockwise or counterclockwise and at least one touch region and function information of the audio reproduction device, and to control the audio reproduction device according to the obtained function information of the audio reproduction device.Type: GrantFiled: March 21, 2022Date of Patent: March 26, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Mi-youn Won, Jung-geun Kim, Ji-hyae Kim, Won-hee Lee
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Patent number: 8426299Abstract: A method of fabricating a semiconductor device may include: alternatively stacking dielectric layers and conductive layers on a substrate to form a stack structure, forming a first photoresist pattern on the stack structure, forming a second photoresist pattern whose thickness is reduced as the second photoresist pattern extends from the center of the stack structure towards a periphery of the stacked structure by performing a heat treatment on the first photoresist pattern, etching the stack structure through the second photoresist pattern to form a slope profile on the stack structure whose thickness is reduced as the slope profile extends from the center of the stack structure towards a periphery of the stacked structure, and forming a step-type profile on the end part of the stack structure by selectively etching the dielectric layer.Type: GrantFiled: December 27, 2011Date of Patent: April 23, 2013Assignee: Samsung Electronics Co., LtdInventors: Joon-Sung Kim, Hye-Soo Shin, Mi-Youn Kim, Young-Soo Kim
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Patent number: 8295424Abstract: A data receiving apparatus and method includes a current-voltage conversion block, which receives a current-type transmit signal including data and a clock signal inserted into the data at a different level from the data, and then converts the received signal into at least one first voltage and at least one second voltage having a different level from the first voltage, and a comparison block, which makes a comparison between the first and second voltages, and then outputs the received signal as one of the data and the clock signal based on a result of the comparison. The data receiving apparatus can easily recover a clock signal while exhibiting better characteristics during the recovery of the clock signal because it is insensitive to a variation in reference voltage and a variation in current at the transmitting state of the timing controller, which are caused by a process variation.Type: GrantFiled: December 29, 2009Date of Patent: October 23, 2012Assignee: Dongbu HiTek Co., Ltd.Inventors: Woo Jae Choi, Sang Ho Woo, Mi Youn Kim
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Publication number: 20120164821Abstract: A method of fabricating a semiconductor device may include: alternatively stacking dielectric layers and conductive layers on a substrate to form a stack structure, forming a first photoresist pattern on the stack structure, forming a second photoresist pattern whose thickness is reduced as the second photoresist pattern extends from the center of the stack structure towards a periphery of the stacked structure by performing a heat treatment on the first photoresist pattern, etching the stack structure through the second photoresist pattern to form a slope profile on the stack structure whose thickness is reduced as the slope profile extends from the center of the stack structure towards a periphery of the stacked structure, and forming a step-type profile on the end part of the stack structure by selectively etching the dielectric layer.Type: ApplicationFiled: December 27, 2011Publication date: June 28, 2012Applicant: Samsung Electronics Co., Ltd.Inventors: Joon-Sung KIM, Hye-Soo SHIN, Mi-Youn KIM, Young-Soo KIM
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Publication number: 20100166117Abstract: A data receiving apparatus and method includes a current-voltage conversion block, which receives a current-type transmit signal including data and a clock signal inserted into the data at a different level from the data, and then converts the received signal into at least one first voltage and at least one second voltage having a different level from the first voltage, and a comparison block, which makes a comparison between the first and second voltages, and then outputs the received signal as one of the data and the clock signal based on a result of the comparison. The data receiving apparatus can easily recover a clock signal while exhibiting better characteristics during the recovery of the clock signal because it is insensitive to a variation in reference voltage and a variation in current at the transmitting state of the timing controller, which are caused by a process variation.Type: ApplicationFiled: December 29, 2009Publication date: July 1, 2010Inventors: Woo Jae Choi, Sang Ho Woo, Mi Youn Kim
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Publication number: 20090147030Abstract: A liquid crystal display (LCD) driver integrated circuit (IC) is provided. The LCD driver IC, according to an embodiment, can include gamma reference buffers built in respective source drivers, where an output connection resistance is provided for connecting an output of a gamma reference buffer of one source driver to an output of a gamma reference buffer of another source driver.Type: ApplicationFiled: October 28, 2008Publication date: June 11, 2009Inventors: Woo Jae Choi, Jong Kee Kim, Mi Youn Kim
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Patent number: 7465988Abstract: A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.Type: GrantFiled: October 12, 2007Date of Patent: December 16, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Sam Lee, Yong-Tae Kim, Mi-Youn Kim, Gyo-Young Jin, Dae-Won Ha, Yun-Gi Kim
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Publication number: 20080036016Abstract: A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.Type: ApplicationFiled: October 12, 2007Publication date: February 14, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung-Sam LEE, Yong-Tae KIM, Mi-Youn KIM, Gyo-Young JIN, Dae-Won HA, Yun-Gi KIM
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Patent number: 7297596Abstract: A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.Type: GrantFiled: October 24, 2006Date of Patent: November 20, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Sam Lee, Yong-Tae Kim, Mi-Youn Kim, Gyo-Young Jin, Dae-Won Ha, Yun-Gi Kim
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Publication number: 20070108516Abstract: A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.Type: ApplicationFiled: October 24, 2006Publication date: May 17, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung-Sam LEE, Yong-Tae KIM, Mi-Youn KIM, Gyo-Young JIN, Dae-Won HA, Yun-Gi KIM