Abstract: An electrochemical transistor device is provided, which comprises a flexible substrate; a layer of organic material, which comprises a source portion, a drain portion and a transistor channel portion; a gate electrode arranged on said substrate separated from said layer of organic material; and a layer of solidified electrolyte arranged in overlapping electric contact with said gate electrode and only with the transistor channel portion of said layer of organic material, thereby defining said transistor channel portion, such that current between said source portion and drain portion is controllable by means of a potential applied to said gate electrode.

Abstract: An electrochemical transistor device is provided, comprising a source contact, a drain contact, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and said at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s).