Patents by Inventor Miao CHENG

Miao CHENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7205634
    Abstract: An MIM structure and method for forming the same the method including forming a bottom conductive electrode overlying a semiconducting substrate; forming a first protection layer on the conductive electrode; forming a dielectric layer on the first protection layer; and, forming an upper conductive electrode on the dielectric layer to form a metal-insulator-metal (MIM) structure.
    Type: Grant
    Filed: March 10, 2004
    Date of Patent: April 17, 2007
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Miao-Cheng Liao, Kuo-Hsien Cheng, Cheng-Chao Lin, Shao-Ta Hsu, Ying-Lang Wang
  • Publication number: 20060051973
    Abstract: A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle.
    Type: Application
    Filed: September 9, 2004
    Publication date: March 9, 2006
    Inventors: Yi-Lung Cheng, Miao-Cheng Liao, Ying-Lang Wang
  • Publication number: 20050202616
    Abstract: An MIM structure and method for forming the same the method including forming a bottom conductive electrode overlying a semiconducting substrate; forming a first protection layer on the conductive electrode; forming a dielectric layer on the first protection layer; and, forming an upper conductive electrode on the dielectric layer to form a metal-insulator-metal (MIM) structure.
    Type: Application
    Filed: March 10, 2004
    Publication date: September 15, 2005
    Inventors: Miao-Cheng Liao, Kuo-Hsien Cheng, Cheng-Chao Lin, Shao-Ta Hsu, Ying-Lang Wang
  • Publication number: 20050074554
    Abstract: A inter-metal dielectric layer structure and the method of the same are provided. The method includes the following steps. A process gas is introduced to form a low-k dielectric layer over the substrate. A reactant gas is in situ introduced to etch the low-k dielectric layer back and to react with the process gas to form a dielectric layer containing an extra element on the low-k dielectric layer. The extra element is provided by the reactant gas. A volume ratio of the reactant gas to the process gas is larger than about 2. The reactant gas may be a nitrogen fluoride (NF3) gas for providing extra nitrogen (N) or a carbon fluoride (CxFy) gas for providing extra carbon (C).
    Type: Application
    Filed: October 6, 2003
    Publication date: April 7, 2005
    Inventors: Shiu-Ko Jangjian, Sheng-Wen Chen, Miao-Cheng Liao, Hung-Jui Chang, Ming-Hui Lin, Ying-Lang Wang
  • Patent number: 6776850
    Abstract: A preventive maintenance tool which may be installed on a metal chemical vapor deposition (CVD) chamber to prevent escape of contaminating and toxic gases from the chamber interior during preventative maintenance (PM) cleaning of the chamber. The tool comprises a cylindrical tool body which fits to the lid O-ring of the chamber to form a gas-tight seal therewith; a vacuum line connector nipple extending from the body for connection to a vacuum line; and a lid panel rotatably mounted in the body and fitted with a pair of hinged closing panels for reversibly sealing the chamber and facilitating chamber cleaning.
    Type: Grant
    Filed: June 8, 2002
    Date of Patent: August 17, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Miao-Cheng Liao, Ying-Lang Wang, Hung-Hsin Liang, Hsiang-Sheng Cheng, Sheng-Te Shu, Chih-Yuan Yang
  • Publication number: 20030228751
    Abstract: A preventative maintenance tool which may be installed on a metal chemical vapor deposition (CVD) chamber to prevent escape of contaminating and toxic gases from the chamber interior during preventative maintenance (PM) cleaning of the chamber. The tool comprises a cylindrical tool body which fits to the lid O-ring of the chamber to form a gas-tight seal therewith; a vacuum line connector nipple extending from the body for connection to a vacuum line; and a lid panel rotatably mounted in the body and fitted with a pair of hinged closing panels for reversibly sealing the chamber and facilitating chamber cleaning.
    Type: Application
    Filed: June 8, 2002
    Publication date: December 11, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Miao-Cheng Liao, Ying-Lang Wang, Hung-Hsin Liang, Hsiang-Sheng Cheng, Sheng-Te Shu, Chih-Yuan Yang
  • Patent number: 6483082
    Abstract: A heater lift mechanism with a ball screw linear actuator provides a relatively maintenance free lift mechanism with low starting torque and high positional accuracy. The heater lift mechanism can also be used to move wafer boats in a vertical furnace. The ball screw linear actuator has substantially reduced backlash over a conventional ACME thread lead screw.
    Type: Grant
    Filed: January 11, 2002
    Date of Patent: November 19, 2002
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Miao-Cheng Liao, Hsiang-Sheng Cheng