Abstract: A motion evaluation system, a method thereof and a computer-readable recording medium are provided. The motion evaluation system includes at least one sensor and a processor. The sensor generates sensing data for a motion posture. The processor obtains the motion posture of the sensor, determines a continued time accumulated when the motion posture conforms to a correct posture, and sends a notification message according to the continued time. The correct posture is related to an angle at which a portion under test inclined to a reference object. Accordingly, the rehabilitation can be performed anytime and anywhere, and it is easier for tracking the rehabilitation situation.

Abstract: A method of processing multi-layer films, the method including: (1) processing a plurality of layers according to selected parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during the processing of the associated one of the plurality of layers, and (3) determining dynamic processing progressions each based on one of the plurality of optical characteristics that is associated with a particular one of the plurality of layers undergoing the processing.

Abstract: A method for post-etch copper cleaning uses a hydrogen plasma with a trace gas additive constituting about 3-10 percent of the plasma by volume to clean a copper surface exposed by etching. The trace gas may be atomic nitrogen or other species having an atomic mass of 15 or greater. The trace gas adds a sputtering aspect to the plasma cleaning and removes polymeric etch by-products and polymeric and other residuals formed during the deposition of dielectric materials or etch stop layers over the copper surface. An anti-corrosion solvent may be used to passivate the copper surface prior to formation of the dielectric materials or etch stop layers.

Abstract: A method for post-etch copper cleaning uses a hydrogen plasma with a trace gas additive constituting about 3-10 percent of the plasma by volume to clean a copper surface exposed by etching. The trace gas may be atomic nitrogen or other species having an atomic mass of 15 or greater. The trace gas adds a sputtering aspect to the plasma cleaning and removes polymeric etch by-products and polymeric and other residuals formed during the deposition of dielectric materials or etch stop layers over the copper surface. An anti-corrosion solvent may be used to passivate the copper surface prior to formation of the dielectric materials or etch stop layers.

Abstract: A method of processing multi-layer films, the method including: (1) processing a plurality of layers according to selected parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during the processing of the associated one of the plurality of layers, and (3) determining dynamic processing progressions each based on one of the plurality of optical characteristics that is associated with a particular one of the plurality of layers undergoing the processing.

Abstract: A method of etching multi-layer films, the method including: (1) etching a plurality of layers according to etching parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during the etching of the associated one of the plurality of layers, and (3) determining dynamic etch progressions each based on one of the plurality of optical characteristics that is associated with a particular one of the plurality of layers undergoing the etching.

Abstract: A method of etching multi-layer films, the method including: (1) etching a plurality of layers according to etching parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during the etching of the associated one of the plurality of layers, and (3) determining dynamic etch progressions each based on one of the plurality of optical characteristics that is associated with a particular one of the plurality of layers undergoing the etching.