Abstract: A laterally structured avalanche photodetector and a manufacturing method therefor.

Abstract: Provided is a photoelectric detector, comprising: a silicon layer (110), the silicon layer (110) comprising a first-doping-type doped region (111); a germanium layer (120) in contact with the silicon layer (110), the germanium layer (120) comprising a second-doping-type doped region (121); and a silicon nitride waveguide (130), the silicon nitride waveguide (130) being arranged surrounding the germanium layer (120) along the extension directions of at least three side walls of the germanium layer (120), wherein the silicon nitride waveguide (130) is used for transmitting an optical signal and coupling the optical signal to the germanium layer (120), and the germanium layer (120) is used for detecting the optical signal and converting the optical signal into an electrical signal.

Abstract: A polarization converter based on taking a high-order TE mode as a transition mode comprises a ridge waveguide (1) and a slab waveguide (2) that are arranged in double layers and varying in width, and a strip waveguide (4) which is varying in width. The ridge waveguide (1) is disposed on the upper end face of the slab waveguide (2), and is aligned with two ends of the slab waveguide (2). The right end of the ridge waveguide (1) and the slab waveguide (2) are connected with the strip waveguide (4) with the varying width. A TM0 mode enters from the left ends of the ridge waveguide and the slab waveguide, and is converted into a TE0 mode for output. On the contrary, the TE0 mode enters from the right end of the strip waveguide and is converted into the TM0 mode for output.

Abstract: An on-chip mode converter-based silicon-germanium photoelectric detection apparatus comprises an insulating substrate, an optical coupler, an on-chip mode converter and a multi-mode silicon-germanium photoelectric detector. The optical coupler, the converter and the photoelectric detector are sequentially connected and all fixed on silicon wafers of the insulating substrate. An incident fundamental mode optical signal is transmitted to the optical coupler through a single-mode fiber, enters the converter via the optical coupled. The converter converts the fundamental mode optical signal into a multi-mode optical field and enters the photoelectric detector, which converts the multi-mode optical field into an electrical signal. Heavily germanium-doped region are located in areas with relatively weak distributed light intensity of the multi-mode optical field.

Abstract: A broadband polarization beam splitter/combiner based on a gradient waveguide directional coupler, comprises a gradient waveguide directional coupler, a beam combining end (1), a curved waveguide (5), a TE mode end (6) and a TM mode end (7). The coupler consists of a straight end gradient waveguide (2) and a serial end gradient waveguide (3). The trend of change of the gradient waveguide (2) is opposite to the gradient waveguide (3), and a gap is provided between the gradient waveguide (2) and the gradient waveguide (3). The beam combining end (1) is connected with one end of the gradient waveguide (2), the other end of the gradient waveguide (2) is connected with one end of the curved waveguide (5), the other end of the curved waveguide (5) is connected with the TE end (6), and the waveguide (3) is connected with the TM end (7).

Abstract: The present invention discloses a GSG track-type radio-frequency electrode, a silicon-based traveling-wave electrode light modulator, and a preparation method, and relates to the field of high-speed electro-optical chips. The GSG track-type radio-frequency electrode includes a GSG-type planar electrode, where a track electrode used for delaying an electric field is periodically added to one side or dual sides of the GSG-type planar electrode, and the track electrode is connected to a ground electrode of the GSG-type planar electrode. The silicon-based traveling-wave electrode light modulator includes the GSG track-type radio-frequency electrode and a conventional silicon-based traveling-wave electrode light modulator, and the GSG track-type radio-frequency electrode is connected to an active region of the silicon-based traveling-wave electrode light modulator by using through holes between electrode layers.

Abstract: A polarization converter based on taking a high-order TE mode as a transition mode comprises a ridge waveguide (1) and a slab waveguide (2) that are arranged in double layers and varying in width, and a strip waveguide (4) which is varying in width. The ridge waveguide (1) is disposed on the upper end face of the slab waveguide (2), and is aligned with two ends of the slab waveguide (2). The right end of the ridge waveguide (1) and the slab waveguide (2) are connected with the strip waveguide (4) with the varying width. A TM0 mode enters from the left ends of the ridge waveguide and the slab waveguide, and is converted into a TE0 mode for output. On the contrary, the TE0 mode enters from the right end of the strip waveguide and is converted into the TM0 mode for output.

Abstract: A broadband polarization beam splitter/combiner based on a gradient waveguide directional coupler, comprises a gradient waveguide directional coupler, a beam combining end (1), a curved waveguide (5), a TE mode end (6) and a TM mode end (7). The coupler consists of a straight end gradient waveguide (2) and a serial end gradient waveguide (3). The trend of change of the gradient waveguide (2) is opposite to the gradient waveguide (3), and a gap is provided between the gradient waveguide (2) and the gradient waveguide (3). The beam combining end (1) is connected with one end of the gradient waveguide (2), the other end of the gradient waveguide (2) is connected with one end of the curved waveguide (5), the other end of the curved waveguide (5) is connected with the TE end (6), and the waveguide (3) is connected with the TM end (7).

Abstract: An on-chip mode converter-based silicon-germanium photoelectric detection apparatus comprises an insulating substrate, an optical coupler, an on-chip mode converter and a multi-mode silicon-germanium photoelectric detector. The optical coupler, the converter and the photoelectric detector are sequentially connected and all fixed on silicon wafers of the insulating substrate. An incident fundamental mode optical signal is transmitted to the optical coupler through a single-mode fiber, enters the converter via the optical coupled. The converter converts the fundamental mode optical signal into a multi-mode optical field and enters the photoelectric detector, which converts the multi-mode optical field into an electrical signal. Heavily germanium-doped region are located in areas with relatively weak distributed light intensity of the multi-mode optical field.

Abstract: An integrated electro-optic modulator and a method of improving 3 dB bandwidth thereof by substrate hollowing. The method comprises the steps of: calculating an electric field intensity distribution area on the cross section of a modulation area of the integrated electro-optic modulator (101); taking an overlapping part of the electric field intensity distribution area and a substrate material (10) as a hollowing out area (80) (102); determining a size and positions of hollowing out windows (60) needing to be opened in a buried layer of silicon dioxide (20) over the hollowing out area (80) beside both sides of electrodes (50), and etching out the hollowing out windows (60) (103); and performing a hollowing operation on the hollowing out area (80) via the hollowing out windows (60) (104).

Abstract: The present invention discloses a GSG track-type radio-frequency electrode, a silicon-based traveling-wave electrode light modulator, and a preparation method, and relates to the field of high-speed electro-optical chips. The GSG track-type radio-frequency electrode includes a GSG-type planar electrode, where a track electrode used for delaying an electric field is periodically added to one side or dual sides of the GSG-type planar electrode, and the track electrode is connected to a ground electrode of the GSG-type planar electrode. The silicon-based traveling-wave electrode light modulator includes the GSG track-type radio-frequency electrode and a conventional silicon-based traveling-wave electrode light modulator, and the GSG track-type radio-frequency electrode is connected to an active region of the silicon-based traveling-wave electrode light modulator by using through holes between electrode layers.

Abstract: There are provided a wavelength selective switch device, a communication apparatus and a wavelength switching method. The wavelength selective switch device includes an incidence unit; an exit unit; a wavelength diversifying-synthesizing unit for diversifying and multiplexing the respective incident lights in a first axis direction; a light adjustment unit for making the lights of respective wavelengths be not diversified in the second axis direction; a liquid crystal beam deflection unit having a plurality of pixels divided into sub-regions, for deflecting the lights of the respective wavelengths by changing phase-shift characteristics of the pixels in the sub-regions; a reflection unit, disposed in parallel with the liquid crystal beam deflection unit; a deflection driving unit for driving electrodes of the pixels to generate required phase-shift characteristics.

Abstract: A wavelength selective switch and a wavelength selection method are provided. The wavelength selective switch comprises a plurality of input ports, via which a plurality of light beams are input respectively, each light beam including at least one optical signal of a predetermined wavelength; at least one output port; and a wavelength separation apparatus including a wavelength separation device and a micro-mirror group, the wavelength separation device being configured to separate at least one optical signal from a light beam input via a predetermined one of the plurality of input ports, and the micro-mirror group being configured to adjust a propagation direction of the at least one optical signal, so that the at least one optical signal is output via a predetermined one of the at least one output port.

Abstract: A wavelength selective switch and a wavelength selection method are provided. The wavelength selective switch comprises an input port, through which a light beam, including a plurality of optical signals having different wavelengths, is incident; a wavelength separation apparatus, including a Blue Phase Liquid Crystal (BPLC) device and configured to separate at least one optical signal from the light beam through the BPLC device; and at least one output port, configured to output the at least one optical signal separated by the wavelength separation apparatus respectively. With the wavelength selective switch and the wavelength selection method, a polarization-independent phase modulation can be realized without a depolarization device disposed in an optical path, which thereby simplifies an optical path, reduces an insertion loss, and lowers costs of the wavelength selective switch and even the entire optical communication system.

Abstract: A wavelength selective switch and a wavelength selection method are provided. The wavelength selective switch comprises a plurality of input ports, via which a plurality of light beams are input respectively, each light beam including at least one optical signal of a predetermined wavelength; at least one output port; and a wavelength separation apparatus including a wavelength separation device and a micro-mirror group, the wavelength separation device being configured to separate at least one optical signal from a light beam input via a predetermined one of the plurality of input ports, and the micro-mirror group being configured to adjust a propagation direction of the at least one optical signal, so that the at least one optical signal is output via a predetermined one of the at least one output port.

Abstract: There are provided a wavelength selective switch device, a communication apparatus and a wavelength switching method. The wavelength selective switch device includes an incidence unit; an exit unit; a wavelength diversifying-synthesizing unit for diversifying and multiplexing the respective incident lights in a first axis direction; a light adjustment unit for making the lights of respective wavelengths be not diversified in the second axis direction; a liquid crystal beam deflection unit having a plurality of pixels divided into sub-regions, for deflecting the lights of the respective wavelengths by changing phase-shift characteristics of the pixels in the sub-regions; a reflection unit, disposed in parallel with the liquid crystal beam deflection unit; a deflection driving unit for driving electrodes of the pixels to generate required phase-shift characteristics.

Abstract: A wavelength selective switch and a wavelength selection method are provided. The wavelength selective switch comprises an input port, through which a light beam, including a plurality of optical signals having different wavelengths, is incident; a wavelength separation apparatus, including a Blue Phase Liquid Crystal (BPLC) device and configured to separate at least one optical signal from the light beam through the BPLC device; and at least one output port, configured to output the at least one optical signal separated by the wavelength separation apparatus respectively. With the wavelength selective switch and the wavelength selection method, a polarization-independent phase modulation can be realized without a depolarization device disposed in an optical path, which thereby simplifies an optical path, reduces an insertion loss, and lowers costs of the wavelength selective switch and even the entire optical communication system.