Abstract: In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.

Abstract: An apparatus for perform metal etching and plasma ashing includes: a processing chamber having an enclosed area; an electrostatic chuck disposed in the enclosed area and configured to secure a wafer, the electrostatic chuck connected with a bias power; at least one coil connected with a source power; a etchant conduit configured provide an etchant to a metal of the wafer within the processing chamber in accordance with a photoresist mask of the wafer; and a gas intake conduit connected with a gas source, wherein the gas intake conduit is configured to supply the processing chamber with a gas from the gas source during performance of plasma ashing within the processing chamber.

Abstract: In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.

Abstract: The present disclosure provides a method for making an integrated circuit. The method comprises processing a first surface of a substrate to create the integrated circuit and grinding a second surface of the substrate to remove material until the substrate is substantially close to a desire thickness. The method also includes performing a wet etch process over the second surface of the substrate and performing a chemical mechanical polishing (CMP) process over the second surface of the substrate to remove a pattern on the substrate. The second surface of the substrate is examined with a metrological instrument to determine if the second surface is substantially smooth; if the second surface is not substantially smooth, the steps of performing the CMP process and examining the second surface with the metrological instrument are repeated until the second surface is substantially smooth.