Patents by Inventor Michael A. A. Zandt In't

Michael A. A. Zandt In't has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacture or trench-gate semiconductor devices
    Patent number: 6521498
    Abstract: The manufacture of a vertical power transistor trench-gate semiconductor device in which the source regions (13) are self-aligned to the trench-gate structures (20,17,11) including the steps of forming a mask (61) on a surface (10a) of a semiconductor body (10), using the mask (61) to form the trench-gate structures (20,17,11), then using the mask (61) to form U-shaped section layers (62A, 62B) of insulating material whose base portion (62B) provides a gate insulating layer on the gate material (11), then removing the mask (61) and forming spacers (64) against well-defined steps provided by the upright portions (62A) of the U-shaped section layers, then using the spacers (64) to form the source regions (13).
    Type: Grant
    Filed: June 4, 2002
    Date of Patent: February 18, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Michael A. A. Zandt In't, Erwin A. Hijzen, Raymond J. E. Heuting
  • Manufacture of trench-gate semiconductor devices
    Publication number: 20020137291
    Abstract: The manufacture of a vertical power transistor trench-gate semiconductor device in which the source regions (13) are self-aligned to the trench-gate structures (20,17,11) including the steps of forming a mask (61) on a surface (10a) of a semiconductor body (10), using the mask (61) to form the trench-gate structures (20,17,11), then using the mask (61) to form U-shaped section layers (62A, 62B) of insulating material whose base portion (62B) provides a gate insulating layer on the gate material (11), then removing the mask (61) and forming spacers (64) against well-defined steps provided by the upright portions (62A) of the U-shaped section layers, then using the spacers (64) to form the source regions (13).
    Type: Application
    Filed: June 4, 2002
    Publication date: September 26, 2002
    Applicant: Koninklijke Philips Electronics N.V.
    Inventors: Michael A.A. Zandt In't, Erwin A. Hijzen, Raymond J.E. Hueting