Abstract: A method of selectively depositing a metal on a surface of a substrate is disclosed. A suitable substrate is selected and a surface is treated with a reducing agent selected from the group consisting of (a) hydrazine, (b) a substituted hydrazine having the structural formula ##STR1## where R.sub.1 is an organic radical selected from the group consisting of alkyl, cycloalkyl, aryl, alkaryl, aralkyl, alkoxy, aryloxy and heterocyclic radicals and R.sub.2, R.sub.3 and R.sub.4 are the hydrogen radical or are the same as R.sub.1, and (c) a mixture of the foregoing. The reducing agent treated surface is selectively exposed to a source of ultraviolet radiation to render a selected area thereof incapable of reducing an activating metal species and to delineate an unexposed area so capable. The selectively radiation-exposed surface is treated with an activating metal species to activate the delineated, unexposed area.