Patents by Inventor Michael A. Fisk

Michael A. Fisk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hot wall diffusion furnace and method for operating the furnace
    Patent number: 4886954
    Abstract: A diffusion furnace and method for processing semiconductor wafers standing on edge wherein the furnace has vertically adjacent electrical resistance heating elements wired in parallel and disposed above the wafers. This arrangement enables the heat input to the furnace by the heating elements to be varied. In a preferred embodiment, the heating elements in the upper section of the tube are connected in one circuit and the heating elements in the lower section of the tube are connected in a second circuit and each circuit is controlled in response to the temperature in that section.
    Type: Grant
    Filed: April 15, 1988
    Date of Patent: December 12, 1989
    Assignee: Thermco Systems, Inc.
    Inventors: Chorng-Tao Yu, Michael A. Fisk, Alan Emami
  • Process and apparatus for low pressure chemical vapor deposition of refractory metal
    Patent number: 4817557
    Abstract: A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.
    Type: Grant
    Filed: September 4, 1987
    Date of Patent: April 4, 1989
    Assignee: Anicon, Inc.
    Inventors: Michael Diem, Michael A. Fisk, Jon C. Goldman
  • Process for low pressure chemical vapor deposition of refractory metal
    Patent number: 4726961
    Abstract: A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.
    Type: Grant
    Filed: June 16, 1986
    Date of Patent: February 23, 1988
    Assignee: Thermco Systems, Inc.
    Inventors: Michael Diem, Michael A. Fisk, Jon C. Goldman
  • Process and apparatus for low pressure chemical vapor deposition of refractory metal
    Patent number: 4619840
    Abstract: A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.
    Type: Grant
    Filed: May 23, 1983
    Date of Patent: October 28, 1986
    Assignee: Thermco Systems, Inc.
    Inventors: Jon C. Goldman, Michael A. Fisk, Michael Diem