Patents by Inventor Michael A. Fury
Michael A. Fury has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7361231Abstract: Workpieces are loaded into a cleaning chamber. The cleaning chamber is pressurized with a first dense-phase cleaning fluid, the temperature and pressure of the first dense-phase fluid being maintained at less than about 1500 psi using a temperature control device. The workpieces are soaked in the first dense-phase fluid for a predetermined time period. After soaking, the workpieces are further cleaned by applying a second, localized, high-pressure dense-phase fluid to the surface of the workpieces.Type: GrantFiled: July 1, 2005Date of Patent: April 22, 2008Assignee: EKC Technology, Inc.Inventors: Michael A. Fury, Robert Wade Sherrill
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Publication number: 20070246074Abstract: A substrate is transferred from an environment at about vacuum into a load lock through a first door. The substrate is then sealed within the load lock. The pressure within the load lock is raised to a high pressure above vacuum. A second door coupling the load lock to a high-pressure processing chamber is then opened and the substrate moved from the load lock into the high-pressure chamber. The substrate is then sealed within the high-pressure chamber. High-pressure processing, such as high pressure cleaning or high pressure deposition, is then performed on the substrate within the high-pressure chamber. Subsequently, the second door is opened and the substrate transferred into the load lock. The substrate is then sealed within the load lock. The pressure within the load lock is lowered to about vacuum and the first door opened. The substrate is then removed from the load lock into the environment.Type: ApplicationFiled: June 5, 2007Publication date: October 25, 2007Inventors: Michael Fury, Robert Sherrill
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Patent number: 7226512Abstract: A substrate is transferred from an environment at about vacuum into a load lock through a first door. The substrate is then sealed within the load lock. The pressure within the load lock is raised to a high pressure above vacuum. A second door coupling the load lock to a high-pressure processing chamber is then opened and the substrate moved from the load lock into the high-pressure chamber. The substrate is then sealed within the high-pressure chamber. High-pressure processing, such as high pressure cleaning or high pressure deposition, is then performed on the substrate within the high-pressure chamber. Subsequently, the second door is opened and the substrate transferred into the load lock. The substrate is then sealed within the load lock. The pressure within the load lock is lowered to about vacuum and the first door opened. The substrate is then removed from the load lock into the environment.Type: GrantFiled: June 18, 2003Date of Patent: June 5, 2007Assignee: EKC Technology, Inc.Inventors: Michael A. Fury, Robert W. Sherrill
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Publication number: 20070000521Abstract: Workpieces are loaded into a cleaning chamber. The cleaning chamber is pressurized with a first dense-phase cleaning fluid, the temperature and pressure of the first dense-phase fluid being maintained at less than about 1500 psi using a temperature control device. The workpieces are soaked in the first dense-phase fluid for a predetermined time period. After soaking, the workpieces are further cleaned by applying a second, localized, high-pressure dense-phase fluid to the surface of the workpieces.Type: ApplicationFiled: July 1, 2005Publication date: January 4, 2007Inventors: Michael Fury, Robert Sherrill
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Patent number: 7074640Abstract: The present invention involves a low-temperature, photoresist-free method of fabricating a barrier layer on a flexible substrate. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.Type: GrantFiled: May 20, 2003Date of Patent: July 11, 2006Assignee: Simon Fraser UniversityInventors: David J. Maloney, Wai M. Lee, Paul J. Roman, Jr., Michael A. Fury
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Publication number: 20050285312Abstract: The invention generally encompasses a method for producing a three-dimensional layered structure comprising at least one layer of a metal-containing material in order to provide functionality. The method comprises sequentially forming each of a plurality of layers, wherein each layer of the plurality of layers has predetermined dimensions, and wherein at least one of the layers comprises a metal-containing material. The plurality of layers is stacked to create an integral three-dimensional layered structure with predetermined dimensions.Type: ApplicationFiled: June 23, 2004Publication date: December 29, 2005Inventors: Michael Fury, Leo Svendsen
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Patent number: 6857437Abstract: Initially, process parameters for dense phase fluid cleaning are determined. Thereafter, a cleaning chamber containing a substrate is pressurized with a dense phase fluid, based on these process parameters. The substrate is then cleaned with the dense phase fluid, again based on these process parameters. Exhaust fluid is subsequently expelled from the cleaning chamber, and thereafter analyzed. The process parameters are then adjusted to adjusted process parameters based on the analysis of the exhaust fluid. Thereafter, the cleaning chamber is again pressurized and cleaning repeated. This pressurization and cleaning is based on the adjusted process parameters. Also, this pressurization and cleaning is repeated until the substrate is sufficiently clean.Type: GrantFiled: June 18, 2003Date of Patent: February 22, 2005Assignee: EKC Technology, Inc.Inventors: Michael A. Fury, Robert W. Sherrill
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Publication number: 20040255979Abstract: A substrate is transferred from an environment at about vacuum into a load lock through a first door. The substrate is then sealed within the load lock. The pressure within the load lock is raised to a high pressure above vacuum. A second door coupling the load lock to a high-pressure processing chamber is then opened and the substrate moved from the load lock into the high-pressure chamber. The substrate is then sealed within the high-pressure chamber. High-pressure processing, such as high pressure cleaning or high pressure deposition, is then performed on the substrate within the high-pressure chamber. Subsequently, the second door is opened and the substrate transferred into the load lock. The substrate is then sealed within the load lock. The pressure within the load lock is lowered to about vacuum and the first door opened. The substrate is then removed from the load lock into the environment.Type: ApplicationFiled: June 18, 2003Publication date: December 23, 2004Inventors: Michael A. Fury, Robert W. Sherrill
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Publication number: 20040255978Abstract: Initially, process parameters for dense phase fluid cleaning are determined. Thereafter, a cleaning chamber containing a substrate is pressurized with a dense phase fluid, based on these process parameters. The substrate is then cleaned with the dense phase fluid, again based on these process parameters. Exhaust fluid is subsequently expelled from the cleaning chamber, and thereafter analyzed. The process parameters are then adjusted to adjusted process parameters based on the analysis of the exhaust fluid. Thereafter, the cleaning chamber is again pressurized and cleaning repeated. This pressurization and cleaning is based on the adjusted process parameters. Also, this pressurization and cleaning is repeated until the substrate is sufficiently clean.Type: ApplicationFiled: June 18, 2003Publication date: December 23, 2004Inventors: Michael A. Fury, Robert W. Sherrill
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Publication number: 20040244818Abstract: A supercritical CO2 cleaning system according to the invention can include: a pressure chamber configured to clean a workpiece with supercritical CO2; an expansion chamber configured to receive an output of the pressure chamber; a CO2 recycle system configured to receive an expanded CO2 stream from the expansion chamber, and configured to output a recycled CO2 stream; a supply of fresh CO2 configured to output a fresh CO2 stream; a purification system configured to receive at least one of the fresh CO2 stream and the recycled CO2 stream, the purification system configured to output a purified CO2 stream; and a first co-solvent supply configured to output a first co-solvent stream, where the pressure chamber is configured to receive the purified CO2 stream and the first co-solvent stream.Type: ApplicationFiled: May 13, 2004Publication date: December 9, 2004Inventors: Michael A. Fury, Robert W. Sherrill
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Publication number: 20040180292Abstract: The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.Type: ApplicationFiled: October 29, 2003Publication date: September 16, 2004Applicant: EKC Technology, Inc.Inventors: Wai M. Lee, David J. Maloney, Paul J. Roman, Michael A. Fury, Ross H. Hill, Clifford Henderson, Sean Barstow
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Publication number: 20040164293Abstract: The present invention involves a low-temperature, photoresist-free method of fabricating a barrier layer on a flexible substrate. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.Type: ApplicationFiled: May 20, 2003Publication date: August 26, 2004Inventors: David J. Maloney, Wai M. Lee, Paul J. Roman, Michael A. Fury
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Patent number: 6723143Abstract: An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be coformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.Type: GrantFiled: August 7, 2002Date of Patent: April 20, 2004Assignee: Honeywell International Inc.Inventors: Daniel Towery, Michael Fury
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Patent number: 6696363Abstract: The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.Type: GrantFiled: June 6, 2001Date of Patent: February 24, 2004Assignee: EKC Technology, Inc.Inventors: Wai M. Lee, David J. Maloney, Paul J. Roman, Michael A. Fury, Ross H. Hill, Clifford Henderson, Sean Barstow
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Patent number: 6566276Abstract: The present invention involves fabrication of a hard mask. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Another embodiment of the present invention is a method of forming an etched pattern in a substrate. A further embodiment of the present invention is a method of forming an implanted region in a substrate. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.Type: GrantFiled: June 6, 2001Date of Patent: May 20, 2003Assignee: EKC Technology, Inc.Inventors: David J. Maloney, Wai M. Lee, Paul J. Roman, Jr., Michael A. Fury, Ross H. Hill
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Publication number: 20030005647Abstract: An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be coformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.Type: ApplicationFiled: August 7, 2002Publication date: January 9, 2003Inventors: Daniel Towery, Michael Fury
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Patent number: 6464740Abstract: An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be conformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.Type: GrantFiled: April 27, 2000Date of Patent: October 15, 2002Assignee: Honeywell International Inc.Inventors: Daniel I. Towery, Michael A. Fury
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Publication number: 20020076495Abstract: The present invention involves fabrication of a hard mask. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Another embodiment of the present invention is a method of forming an etched pattern in a substrate. A further embodiment of the present invention is a method of forming an implanted region in a substrate. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.Type: ApplicationFiled: June 6, 2001Publication date: June 20, 2002Inventors: David J. Maloney, Wai M. Lee, Paul J. Roman, Michael A. Fury, Ross H. Hill
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Publication number: 20020037481Abstract: The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.Type: ApplicationFiled: June 6, 2001Publication date: March 28, 2002Inventors: Wai M. Lee, David J. Maloney, Paul J. Roman, Michael A. Fury, Ross H. Hill, Clifford Henderson, Sean Barstow
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Patent number: 5284549Abstract: A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.Type: GrantFiled: January 2, 1992Date of Patent: February 8, 1994Assignee: International Business Machines CorporationInventors: Michael S. Barnes, Melanie M. Chow, John C. Forster, Michael A. Fury, Chang-Ching Kin, Harris C. Jones, John H. Keller, James A. O'Neill