Patents by Inventor Michael A. Fury

Michael A. Fury has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7361231
    Abstract: Workpieces are loaded into a cleaning chamber. The cleaning chamber is pressurized with a first dense-phase cleaning fluid, the temperature and pressure of the first dense-phase fluid being maintained at less than about 1500 psi using a temperature control device. The workpieces are soaked in the first dense-phase fluid for a predetermined time period. After soaking, the workpieces are further cleaned by applying a second, localized, high-pressure dense-phase fluid to the surface of the workpieces.
    Type: Grant
    Filed: July 1, 2005
    Date of Patent: April 22, 2008
    Assignee: EKC Technology, Inc.
    Inventors: Michael A. Fury, Robert Wade Sherrill
  • Patent number: 7226512
    Abstract: A substrate is transferred from an environment at about vacuum into a load lock through a first door. The substrate is then sealed within the load lock. The pressure within the load lock is raised to a high pressure above vacuum. A second door coupling the load lock to a high-pressure processing chamber is then opened and the substrate moved from the load lock into the high-pressure chamber. The substrate is then sealed within the high-pressure chamber. High-pressure processing, such as high pressure cleaning or high pressure deposition, is then performed on the substrate within the high-pressure chamber. Subsequently, the second door is opened and the substrate transferred into the load lock. The substrate is then sealed within the load lock. The pressure within the load lock is lowered to about vacuum and the first door opened. The substrate is then removed from the load lock into the environment.
    Type: Grant
    Filed: June 18, 2003
    Date of Patent: June 5, 2007
    Assignee: EKC Technology, Inc.
    Inventors: Michael A. Fury, Robert W. Sherrill
  • Patent number: 7074640
    Abstract: The present invention involves a low-temperature, photoresist-free method of fabricating a barrier layer on a flexible substrate. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
    Type: Grant
    Filed: May 20, 2003
    Date of Patent: July 11, 2006
    Assignee: Simon Fraser University
    Inventors: David J. Maloney, Wai M. Lee, Paul J. Roman, Jr., Michael A. Fury
  • Patent number: 6857437
    Abstract: Initially, process parameters for dense phase fluid cleaning are determined. Thereafter, a cleaning chamber containing a substrate is pressurized with a dense phase fluid, based on these process parameters. The substrate is then cleaned with the dense phase fluid, again based on these process parameters. Exhaust fluid is subsequently expelled from the cleaning chamber, and thereafter analyzed. The process parameters are then adjusted to adjusted process parameters based on the analysis of the exhaust fluid. Thereafter, the cleaning chamber is again pressurized and cleaning repeated. This pressurization and cleaning is based on the adjusted process parameters. Also, this pressurization and cleaning is repeated until the substrate is sufficiently clean.
    Type: Grant
    Filed: June 18, 2003
    Date of Patent: February 22, 2005
    Assignee: EKC Technology, Inc.
    Inventors: Michael A. Fury, Robert W. Sherrill
  • Publication number: 20040255978
    Abstract: Initially, process parameters for dense phase fluid cleaning are determined. Thereafter, a cleaning chamber containing a substrate is pressurized with a dense phase fluid, based on these process parameters. The substrate is then cleaned with the dense phase fluid, again based on these process parameters. Exhaust fluid is subsequently expelled from the cleaning chamber, and thereafter analyzed. The process parameters are then adjusted to adjusted process parameters based on the analysis of the exhaust fluid. Thereafter, the cleaning chamber is again pressurized and cleaning repeated. This pressurization and cleaning is based on the adjusted process parameters. Also, this pressurization and cleaning is repeated until the substrate is sufficiently clean.
    Type: Application
    Filed: June 18, 2003
    Publication date: December 23, 2004
    Inventors: Michael A. Fury, Robert W. Sherrill
  • Publication number: 20040255979
    Abstract: A substrate is transferred from an environment at about vacuum into a load lock through a first door. The substrate is then sealed within the load lock. The pressure within the load lock is raised to a high pressure above vacuum. A second door coupling the load lock to a high-pressure processing chamber is then opened and the substrate moved from the load lock into the high-pressure chamber. The substrate is then sealed within the high-pressure chamber. High-pressure processing, such as high pressure cleaning or high pressure deposition, is then performed on the substrate within the high-pressure chamber. Subsequently, the second door is opened and the substrate transferred into the load lock. The substrate is then sealed within the load lock. The pressure within the load lock is lowered to about vacuum and the first door opened. The substrate is then removed from the load lock into the environment.
    Type: Application
    Filed: June 18, 2003
    Publication date: December 23, 2004
    Inventors: Michael A. Fury, Robert W. Sherrill
  • Publication number: 20040244818
    Abstract: A supercritical CO2 cleaning system according to the invention can include: a pressure chamber configured to clean a workpiece with supercritical CO2; an expansion chamber configured to receive an output of the pressure chamber; a CO2 recycle system configured to receive an expanded CO2 stream from the expansion chamber, and configured to output a recycled CO2 stream; a supply of fresh CO2 configured to output a fresh CO2 stream; a purification system configured to receive at least one of the fresh CO2 stream and the recycled CO2 stream, the purification system configured to output a purified CO2 stream; and a first co-solvent supply configured to output a first co-solvent stream, where the pressure chamber is configured to receive the purified CO2 stream and the first co-solvent stream.
    Type: Application
    Filed: May 13, 2004
    Publication date: December 9, 2004
    Inventors: Michael A. Fury, Robert W. Sherrill
  • Publication number: 20040180292
    Abstract: The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.
    Type: Application
    Filed: October 29, 2003
    Publication date: September 16, 2004
    Applicant: EKC Technology, Inc.
    Inventors: Wai M. Lee, David J. Maloney, Paul J. Roman, Michael A. Fury, Ross H. Hill, Clifford Henderson, Sean Barstow
  • Publication number: 20040164293
    Abstract: The present invention involves a low-temperature, photoresist-free method of fabricating a barrier layer on a flexible substrate. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
    Type: Application
    Filed: May 20, 2003
    Publication date: August 26, 2004
    Inventors: David J. Maloney, Wai M. Lee, Paul J. Roman, Michael A. Fury
  • Patent number: 6696363
    Abstract: The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.
    Type: Grant
    Filed: June 6, 2001
    Date of Patent: February 24, 2004
    Assignee: EKC Technology, Inc.
    Inventors: Wai M. Lee, David J. Maloney, Paul J. Roman, Michael A. Fury, Ross H. Hill, Clifford Henderson, Sean Barstow
  • Patent number: 6566276
    Abstract: The present invention involves fabrication of a hard mask. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Another embodiment of the present invention is a method of forming an etched pattern in a substrate. A further embodiment of the present invention is a method of forming an implanted region in a substrate. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
    Type: Grant
    Filed: June 6, 2001
    Date of Patent: May 20, 2003
    Assignee: EKC Technology, Inc.
    Inventors: David J. Maloney, Wai M. Lee, Paul J. Roman, Jr., Michael A. Fury, Ross H. Hill
  • Patent number: 6464740
    Abstract: An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be conformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.
    Type: Grant
    Filed: April 27, 2000
    Date of Patent: October 15, 2002
    Assignee: Honeywell International Inc.
    Inventors: Daniel I. Towery, Michael A. Fury
  • Publication number: 20020076495
    Abstract: The present invention involves fabrication of a hard mask. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Another embodiment of the present invention is a method of forming an etched pattern in a substrate. A further embodiment of the present invention is a method of forming an implanted region in a substrate. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
    Type: Application
    Filed: June 6, 2001
    Publication date: June 20, 2002
    Inventors: David J. Maloney, Wai M. Lee, Paul J. Roman, Michael A. Fury, Ross H. Hill
  • Publication number: 20020037481
    Abstract: The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.
    Type: Application
    Filed: June 6, 2001
    Publication date: March 28, 2002
    Inventors: Wai M. Lee, David J. Maloney, Paul J. Roman, Michael A. Fury, Ross H. Hill, Clifford Henderson, Sean Barstow
  • Patent number: 5284549
    Abstract: A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.
    Type: Grant
    Filed: January 2, 1992
    Date of Patent: February 8, 1994
    Assignee: International Business Machines Corporation
    Inventors: Michael S. Barnes, Melanie M. Chow, John C. Forster, Michael A. Fury, Chang-Ching Kin, Harris C. Jones, John H. Keller, James A. O'Neill
  • Patent number: 4340618
    Abstract: A process for forming a substantially glass free surface on screened refractory metallurgy areas on a ceramic substrate wherein a thin layer of Pd is deposited over the metallurgy areas and the metallurgy areas subsequently sintered causing the surface refractory metal particles to be fused into a substantially solid metallurgy layer under the catalyzing influence of the Pd.
    Type: Grant
    Filed: March 20, 1981
    Date of Patent: July 20, 1982
    Assignee: International Business Machines Corporation
    Inventors: Michael A. Fury, Ananda H. Kumar