Patents by Inventor Michael A. Graf

Michael A. Graf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6828572
    Abstract: The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.
    Type: Grant
    Filed: April 1, 2003
    Date of Patent: December 7, 2004
    Assignee: Axcelis Technologies, Inc.
    Inventors: Ronald N. Reece, Michael A. Graf, Thomas Parrill, Brian S. Freer
  • Publication number: 20040195528
    Abstract: The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.
    Type: Application
    Filed: April 1, 2003
    Publication date: October 7, 2004
    Inventors: Ronald N. Reece, Michael A. Graf, Thomas Parrill, Brian S. Freer
  • Patent number: 6608315
    Abstract: A mass analysis magnet assembly (16) is provided for use in an ion implanter (10), comprising: (i) a magnet (44) for mass analyzing an ion beam (15) output by an ion source (14), the magnet providing an interior region (49) through which the ion beam passes; and (ii) at least one strike plate (48) in part forming an outer boundary of the interior region (49). The at least one strike plate is comprised of an isotopically pure carbon-based material. The isotopically pure carbon-based material, preferably by mass greater than 99% carbon C-12, prevents neutron radiation when impacted by deuterons extracted from the ion source (14). The strike plate (48) may comprise an upper layer (56) of isotopically pure carbon C-12 isotope positioned atop a lower substrate (54).
    Type: Grant
    Filed: November 1, 2000
    Date of Patent: August 19, 2003
    Inventors: Kourosh Saadatmand, Michael A. Graf, Edward K. McIntyre
  • Patent number: 6534775
    Abstract: A system for inhibiting the transport of contaminant particles with an ion beam includes a pair of electrodes that provide opposite electric fields through which the ion beam travels. A particle entrained in the ion beam is charged to a polarity matching the polarity of ion beam when traveling through a first of the electric fields. The downstream electrode provides another electric field for repelling the positively charged particle away from the direction of beam travel.
    Type: Grant
    Filed: September 1, 2000
    Date of Patent: March 18, 2003
    Assignee: Axcelis Technologies, Inc.
    Inventors: Eric R. Harrington, Victor M. Benveniste, Michael A. Graf, Robert D. Rathmell
  • Patent number: 6476399
    Abstract: A system for inhibiting the transport of contaminant particles with an ion beam includes a particle charging system for charging particles within a region through which the ion beam travels. An electric field is generated downstream relative to the charged region so as to urge charged particles away from a direction of travel for the ion beam.
    Type: Grant
    Filed: September 1, 2000
    Date of Patent: November 5, 2002
    Assignee: Axcelis Technologies, Inc.
    Inventors: Eric R. Harrington, Victor M. Benveniste, Michael A. Graf, Robert D. Rathmell
  • Patent number: 6135128
    Abstract: A method and system for in-process cleaning of an ion source (12) is provided. The ion source (12) comprises (i) a plasma chamber (22) formed by chamber walls (112, 114, 116) that bound an ionization zone (120); (ii) a source of ionizable dopant gas (66) and a first mechanism (68) for introducing said ionizable dopant gas into said plasma chamber; (iii) a source of cleaning gas (182) and a second mechanism (184) for introducing said cleaning gas into said plasma chamber; and (iv) an exciter (130) at least partially disposed within said chamber for imparting energy to said ionizable dopant gas and said cleaning gas to create a plasma within said plasma chamber. The plasma comprises disassociated and ionized constituents of said dopant gas and disassociated and ionized constituents of said cleaning gas.
    Type: Grant
    Filed: March 27, 1998
    Date of Patent: October 24, 2000
    Assignee: Eaton Corporation
    Inventors: Michael A. Graf, Victor M. Benveniste
  • Patent number: 6101971
    Abstract: Apparatus and method for implanting ions into a workpiece surface. A concentration of ions is produced. An optical analysis of the concentration of ions is performed and recorded. The constituency of the ion concentration is determined by comparing the optical analysis data with a database of records on a storage medium wherein the optical analysis data for given concentrations of ions have been stored for subsequent access. Ions from the ion concentration are caused to impact a workpiece surface. The dose of ions implanted into the workpiece is measured. Implantation of the workpiece is stopped once an appropriate dose has been reached.
    Type: Grant
    Filed: December 22, 1998
    Date of Patent: August 15, 2000
    Assignee: Axcelis Technologies, Inc.
    Inventors: A. Stuart Denholm, Jiong Cheng, Michael A. Graf, Peter Kellerman, George Stejic