Abstract: A method for determining priority of a selected workpiece in a process flow including a plurality of operations includes providing an objective function relating manufacturing losses to workpiece priority for the operations in the process flow. The objective function is solved to generate priority metrics for at least a subset of the operations remaining for the selected workpiece to allow completion of the selected workpiece in the process flow by a target completion due time.

Abstract: A method for processing workpieces in a process flow including a plurality of operations includes employing a fabrication simulation model of the process flow to determine an estimated completion time for a selected workpiece. The fabrication simulation model simulates the processing of the selected workpiece and other workpieces in the process flow through the plurality of operations. The priority of the selected workpiece is adjusted based on a comparison between a target completion time for the selected workpiece and the estimated completion time.

Abstract: A photolithography test structure is provided for measuring the amount of notching associated with photolithography processing. The test structure includes a curved insulating structure placed in close spaced proximity with a conductive, interconnect structure. A pair of conductive pads are deposited at opposite ends of the interconnect structure for measuring the resistance through the interconnect. Depending upon the amount of notching associated with the interconnect, resistance readings will vary. Test areas containing notched interconnect can be compared with controlled areas specifically designed not to have notching in order to determine relative changes in resistance, and to correlate that resistance with notching magnitude. The insulating structure, interconnect structure and conductive pads are processed upon the same substrate material containing the resulting product requiring testing.

Abstract: A photolithography test structure is provided for measuring the amount of notching associated with photolithography processing. The test structure includes a curved insulating structure placed in close spaced proximity with a conductive, interconnect structure. A pair of conductive pads are deposited at opposite ends of the interconnect structure for measuring the resistance through the interconnect. Depending upon the amount of notching associated with the interconnect, resistance readings will vary. Test areas containing notched interconnect can be compared with controlled areas specifically designed not to have notching in order to determine relative changes in resistance, and to correlate that resistance with notching magnitude. The insulating structure, interconnect structure and conductive pads are processed upon the same substrate material containing the resulting product requiring testing.