Abstract: A nitride-based laser diode structure utilizing a metal-oxide (e.g., Indium-Tin-Oxide (ITO) or Zinc-Oxide (ZnO)) in place of p-doped AlGaN to form the upper cladding layer. An InGaN laser diode structure utilizes ITO upper cladding structure, with an SiO2 isolation structure formed on opposite sides of the ITO upper cladding structure to provide a lateral index step that is large enough to enable lateral single-mode operation. The lateral index step is further increased by slightly etching the GaN:Mg waveguide layer below the SiO2 isolation structure. An optional p-type current barrier layer (e.g., AlGaN:Mg having a thickness of approximately 20 nm) is formed between the InGaN-MQW region and a p-GaN upper waveguide layer to impede electron leakage from the InGaN-MQW region.

Abstract: Substrates having increased thermal conductivity are provided, comprising a body having opposed surfaces and a cavity that opens on at least one surface, the cavity containing at least one material having a greater thermal conductivity than the body. Devices are provided comprising a substrate and a semiconductor over a surface of the substrate. Methods of forming devices according to the invention are also provided.

Abstract: A structure for nitride laser diode arrays attached to a thermally conducting substrate is described where the sapphire growth substrate has been removed. The thermally conducting substrate is attached to the side opposite of the sapphire growth substrate.

Abstract: A method of forming an integrated microelectronic device and a micro channel is provided. The method offers an inexpensive way of integrating devices that are usually incompatible during fabrication, a microchannel and a microelectronic structure such as an electro-optic light source, a detector or a MEMs device into a single integrated structure.

Abstract: A method of using ammonia to form a GaAs alloy with nitrogen atoms is described. The method includes the operation of introducing ammonia with an agent to assist in the breakdown of the ammonia into a reaction chamber with the GaAs film. Agents that are described include radiation as well as compounds that include aluminum.

Abstract: A method of using ammonia to form a GaAs alloy with nitrogen atoms is described. The method includes the operation of introducing ammonia with an agent to assist in the breakdown of the ammonia into a reaction chamber with the GaAs film. Agents that are described include radiation as well as compounds that include aluminum.

Abstract: A structure for nitride laser diode arrays attached to a thermally conducting substrate is described where the sapphire growth substrate has been removed. The thermally conducting substrate is attached to the side opposite of the sapphire growth substrate.

Abstract: Substrates having increased thermal conductivity are provided, comprising a body having opposed surfaces and a cavity that opens on at least one surface, the cavity containing at least one material having a greater thermal conductivity than the body. Devices are provided comprising a substrate and a semiconductor over a surface of the substrate. Methods of forming devices according to the invention are also provided.

Abstract: A method and structure for nitride based laser diode arrays on an insulating substrate is described. Various contact layouts are used to reduce electrical and thermal crosstalk between laser diodes in the array. A channel structure is used to make a surface emitting laser diode while maintaining a simple contact structure. Buried layers are used to provide a compact and low crosstalk contact structure for the laser diode array.

Abstract: A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an edge-emitting nitride based semiconductor laser structure. The amount of p-type material in the nitride based semiconductor laser structure can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication.

Abstract: A nitride based resonant cavity semiconductor structure has highly reflective mirrors on opposite sides of the active layer. These highly reflective mirrors can be distributed Bragg reflectors or metal terminated layer stacks of dielectric materials. The nitride based resonant cavity semiconductor structure can be vertical cavity surface emitting laser (VCSEL), a light emitting diode (LED), or a photodetector (PD), or a combination of these devices.

Abstract: A method for placing nitride laser diode arrays on a thermally and electrically conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A secondary layer is subsequently deposited to act as a transfer support structure and bonding interface. The membrane is released from the intermediate substrate and a thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed. Similarly, the secondary layer may be used as the new host substrate given an appropriate thickness is deposited prior to removal of the intermediate substrate.

Abstract: Graded semiconductor layers between GaN and AlGaN layers in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.

Abstract: Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substrate and a laser pulse directed through the transparent sapphire detaches the gallium nitride layers from the sapphire substrate. The gallium nitride layers are then detached from the support substrate forming freestanding gallium nitride substrates.

Abstract: A dual III-V nitride laser structure has a thick current spreading layer on a sapphire substrate and a trench extending into the current spreading layer to reduce thermal cross-talk between the dual lasers.

Abstract: An inner stripe laser diode structure for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding.

Abstract: A method for placing nitride laser diode arrays on a thermally and electrically conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A secondary layer is subsequently deposited to act as a transfer support structure and bonding interface. The membrane is released from the intermediate substrate and a thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed. Similarly, the secondary layer may be used as the new host substrate given an appropriate thickness is deposited prior to removal of the intermediate substrate.

Abstract: A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an edge-emitting nitride based semiconductor laser structure. The amount of p-type material in the nitride based semiconductor laser structure can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication.

Abstract: Graded semiconductor layers between GaN and AlGaN layers in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.

Abstract: Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substrate and a laser pulse directed through the transparent sapphire detaches the gallium nitride layers from the sapphire substrate. The gallium nitride layers are then detached from the support substrate forming freestanding gallium nitride substrates.