Abstract: Provided is a thermocouple transition body apparatus comprising: a transition body, having at least one recess; a positive electrical terminal; a negative electrical terminal; and, at least one cap; wherein the transition body, positive terminal, and negative terminal are configured to attach to conductors without the use of epoxy or crimping. The thermocouple transition body apparatus is able to withstand temperatures exceeding 500 degrees Fahrenheit.

Abstract: Provided is a thermocouple transition body apparatus comprising: a transition body, having at least one recess; a positive electrical terminal; a negative electrical terminal; and, at least one cap; wherein the transition body, positive terminal, and negative terminal are configured to attach to conductors without the use of epoxy or crimping. The thermocouple transition body apparatus is able to withstand temperatures exceeding 500 degrees Fahrenheit.

Abstract: Provided is a thermocouple transition body apparatus comprising: a transition body, having at least one recess; a positive electrical terminal; a negative electrical terminal; and, at least one cap; wherein the transition body, positive terminal, and negative terminal are configured to attach to conductors without the use of epoxy or crimping. The thermocouple transition body apparatus is able to withstand temperatures exceeding 500 degrees Fahrenheit.

Abstract: Provided is a displacement sensor assembly which includes a cantilever beam, a reaction block, a strain sensor, and a temperature sensor. The cantilever beam is physically oriented such that the longitudinal axis of the cantilever beam is perpendicular to the direction of displacement. A first end of the cantilever beam is fixably mounted to a fixed reference and a first end of the reaction block is fixably mounted to a moving reference. A second end of the cantilever beam is joined to a second end of the reaction block. The strain sensor is mounted and calibrated to detect displacement between the fixed and moving reference by measuring strain on the second end of the cantilever beam, and the temperature sensor is mounted and calibrated to counteract the effect of thermal strain on the sensor assembly and a method of use therefore.

Abstract: Provided is a thermocouple transition body apparatus comprising: a transition body, having at least one recess; a positive electrical terminal; a negative electrical terminal; and, at least one cap; wherein the transition body, positive terminal, and negative terminal are configured to attach to conductors without the use of epoxy or crimping. The thermocouple transition body apparatus is able to withstand temperatures exceeding 500 degrees Fahrenheit.

Abstract: A displacement sensor assembly comprising a cantilever beam, a reaction block, a strain sensor, and a temperature sensor, wherein the cantilever beam is physically oriented such that the longitudinal axis of the cantilever beam is perpendicular to the direction of displacement, a first end of the cantilever beam is fixably mounted to a fixed reference and a first end of the reaction block is fixably mounted to a moving reference, a second end of the cantilever beam is joined to a second end of the reaction block, the strain sensor is mounted and calibrated to detect displacement between the fixed and moving reference by measuring strain on the second end of the cantilever beam, and the temperature sensor is mounted and calibrated to counteract the effect of thermal strain on the sensor assembly and a method of use therefore.

Abstract: An acoustic transducer apparatus comprising a bolt; a second portion; a first portion; a cover; a nut; an entrant optical fiber for connecting to an external device; an optical splitter with an input fiber; and, an optical fiber that is configured as a loop with at least one winding about an axis; wherein the entrant optical fiber, optical splitter, and looped optical fiber are configured to perform as an optical interferometer, and are contained within a housing made up of the bolt, second portion, first portion, cover, and nut and an associated method of use of the acoustic transducer apparatus.

Abstract: A measurement device may include a loadable member that supports a load and measures the force created in the loadable member by the load. The loadable member may have an aperture and an optical fiber located within the aperture. The optical fiber may include one or more fiber Bragg grating (FBG) sensors.

Abstract: A sensing device includes a first layer, a second layer, and an optical sensor. The first layer includes a first surface for supporting an associated load. The first layer transmits a strain to a second surface due to the associated load located on the first surface. The second layer is formed of a compliant material and provides substantially uniform support to the first layer and deflects due to the associated load. The optical sensor is positioned between the first and second layers and senses the strain due to the associated load.

Abstract: Oxidizable contaminants in water are destroyed rapidly and efficiently by exposing the water to oxidizing conditions under pressure. Specifically, a single dose of hydrogen peroxide may be injected into the water, followed by the repeated injection and mixing of low doses of ozone. In each such high intensity mixing/reaction stage, ozone is injected at a pressure, velocity, and direction approximately matching that of the contaminated water flow. High intensity mixing under pressure facilitates rapid and complete oxidation of the contaminants with minimal stripping of volatile contaminants and waste of undissolved ozone. Residual ozone levels after high intensity mixing may be carefully monitored and minimized by adjusting the injection of hydrogen peroxide and ozone in order to suppress the formation of bromate. Additional contaminants may be removed by passing the treated water through activated carbon beds.

Abstract: Oxidizable contaminants in water are destroyed quickly and efficiently by exposing a contaminated water flow to oxidizing conditions under pressure. Specifically, ozone generated from oxygen and hydrogen peroxide are injected into the water flow in at least one, and preferably more than one, high intensity mixing/reaction stage. The ozone and hydrogen peroxide are injected at velocities and directions approximately matching those of the contaminated water flow. High intensity mixing under pressure facilitates rapid and complete oxidation of the contaminants with minimal stripping of volatile contaminants and waste of undissolved ozone. Residual ozone levels after high intensity mixing are carefully monitored and minimized by adjusting the injection of hydrogen peroxide and ozone in order to suppress the formation of bromate.

Abstract: A method for achieving greater uniformity and control in vapor phase etching of silicon, silicon oxide layers and related materials associated with wafers used for semiconductor devices comprises the steps of first cleaning the wafer surface to remove organics, followed by vapor phase etching. An integrated apparatus for cleaning organic and, subsequently, vapor phase etching, is also described.In embodiments of the invention cooling steps are incorporated to increase throughput, an on-demand vaporizer is provided to repeatably supply vapor at other than azeotropic concentration, and a residue-free etch process is provided.

Abstract: A method of selective etching of native oxide on a substrate is disclosed in which hydrogen halide vapor and water vapor are exposed to the substrate surface under appropriate conditions and long enough to remove native oxide but not long enough to remove any significant amount of other oxides. Treating conditions are maintained to prevent water vapor from condensing on the substrate until sufficient native oxide is etched so that substantially all the native oxide will be etched before appreciable other oxides are etched.

Abstract: A semiconductor wafer processing apparatus has a processing housing including a pair of coaxial hollow cylindrical members each defining an inner cylindrical chamber for directing a treatment medium toward a wafer and an annular chamber for withdrawing the treatment medium. A wafer support which can include a heater holds one or two wafers substantially normal to the axis of the processing housing. The treatment medium is introduced in vapor phase at very low to high velocity and at subatmospheric to superatmospheric pressure. Radiation can be introduced into the housing, and wafers can be automatically moved into and out of the housing and from the housing to another treating apparatus.

Abstract: A reaction system and process for uniformly heating semiconductor substrates and a device for supporting the same and direct conductive heating of IC wafers within a reactor are described. The substrate is held in direct contact with the heating source positioned within the reactor. The heat source is a thermal delivery module made of material such as solid silicon carbide, or high temperature material containing resistive heating elements. The heat is uniformly transferred to the walls of the module by a molten metal having a low melting point and high boiling point such as essentially indium or bismuth or a eutectic of indium and bismuth.

Abstract: A reaction system and process for uniformly heating semiconductor substrates and a device for supporting the same and direct conductive heating of IC wafers within a reactor are described. The substrate is held in direct contact with the heating source positioned within the reactor. The heat source is a thermal delivery module made of material such as solid silicon carbide, or high temperature material containing resistive heating elements. The heat is uniformly transferred to the walls of the module by a molten metal having a low melting point and high boiling point such as essentially indium or bismuth or a eutectic or indium and bismuth.

Abstract: A reaction system and process for uniformly heating semiconductor substrates and a device for supporting the same and direct conductive heating of IC wafers within a reactor are described. The substrate is held in direct contact with the heating source positioned within the reactor. The heat source is a thermal delivery module made of material such as solid silicon carbide, or high temperature material containing resistive heating elements. The heat is uniformly transferred to the walls of the module by a molten metal having a low melting point and high boiling point such as essentially indium or bismuth or a eutectic of indium and bismuth.

Abstract: Process and apparatus for heating substrates to form semiconductor regions. A gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and non-obstructive to radiant heat energy transmitted at a predetermined short wave length. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be processed. The susceptor and substrates are heated directly while the walls of the reaction chamber remain cool. The substrates are heated uniformly, and single crystal semiconductor wafers processed by this technique have little or no crystallographic slip. To further insure uniform heating, the susceptor may be moved relative to the radiant heat source which, in the preferred embodiment, comprises a bank of tungsten filament quartz-iodine high intensity lamps.

Abstract: A sports goggle provided with power means in the form of a miniature electrical fan mounted within the air space defined by the goggle and the face of the wearer when the goggle is in place. The fan is selectively actuatable by the wearer of the goggle to draw the warm humid air within the air space into the fan, to compress the same therein, and to circulate the same throughout the air space to prevent condensation build-up on the inner surface of the lens structure of the goggle and on eyeglasses of the wearer of the goggle. The fan also urges the circulated warm humid air outwardly of the goggle through air passages provided in the shell of the goggle so that ambient air may enter the goggle to replace the forced out air without admitting snow or other precipitation from the ambient.

Abstract: Process and apparatus for heating substrates to form semiconductor regions. A gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and non-obstructive to radiant heat energy transmitted at a predetermined short wave length. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be processed. The susceptor and substrates are heated directly while the walls of the reaction chamber remain cool. The substrates are heated uniformly, and single crystal semiconductor wafers processed by this technique have little or no crystallographic slip. To further insure uniform heating, the susceptor may be moved relative to the radiant heat source which, in the preferred embodiment, comprises a bank of tungsten filament quartz-iodine high intensity lamps.