Abstract: Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.

Abstract: Laser-absorbing seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming a metal seed paste above a substrate. The metal seed paste includes a laser-absorbing species. The metal seed paste is irradiated with a laser to form a metal seed layer. The irradiating includes exciting the laser-absorbing species. A conductive contact for the solar cell is then formed from the metal seed layer.

Abstract: Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.

Abstract: A method of fabricating a solar cell is disclosed. The method includes the steps of forming a sacrificial layer on a silicon substrate, forming a doped silicon layer atop the sacrificial substrate, forming a silicon film atop the doped silicon layer, forming a plurality of interdigitated contacts on the silicon film, contacting each of the plurality of interdigitated contacts with a metal contact, and removing the sacrificial layer.

Abstract: A method of fabricating a solar cell is disclosed. The method includes the steps of forming a sacrificial layer on a silicon substrate, forming a doped silicon layer atop the sacrificial substrate, forming a silicon film atop the doped silicon layer, forming a plurality of interdigitated contacts on the silicon film, contacting each of the plurality of interdigitated contacts with a metal contact, and removing the sacrificial layer.

Abstract: Methods of treating Wnt/Frizzled-related diseases, comprising administering niclosamide compounds are provided. Methods of predicting whether a disease will respond to treatment with a niclosamide compound are also provided.

Abstract: A method of fabricating a solar cell is disclosed. The method includes the steps of forming a sacrificial layer on a silicon substrate, forming a doped silicon layer atop the sacrificial substrate, forming a silicon film atop the doped silicon layer, forming a plurality of interdigitated contacts on the silicon film, contacting each of the plurality of interdigitated contacts with a metal contact, and removing the sacrificial layer.

Abstract: Disclosed is a method for inhibiting the growth of breast carcinoma stem cells. that express High Molecular Weight -Melanoma Associated Antigen (HMW-MAA). The method comprises administering to an individual a composition comprising an antibody reactive with HMW-MAA or a fragment of such an antibody in an amount effective to inhibit the growth of the breast carcinoma cells. Also provided are methods for inhibiting metastasis of breast carcinomas and methods for identifying HMW-MAA+ breast cancer stem cells.

Abstract: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

Abstract: An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor. The first type of semiconductor material has a graded doping concentration of a dopant material within the absorption region. A multiplication region is proximate to and separate from the absorption region. The multiplication region includes a second type of semiconductor material in which there is an electric field. The electric field is to multiply the free charge carriers created in the absorption region. A reflector is disposed proximate to the multiplication region such that the multiplication region is between the absorption region and the reflector. The reflector is to reflect unabsorbed light that reaches the reflector from the absorption region back to the absorption region.

Abstract: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

Abstract: A bracket having a long leg and a base wherein the base has at least two layers. A preferred bracket has lateral support pieces connecting the long leg and the base. A method of holding a second portion of a structure which is subject to a pulling or pushing force tending to separate it from a first portion of the structure is also disclosed. The method comprises providing an “L”-shaped bracket having a long leg and a base, laterally attaching the long leg of the bracket to a first portion of the structure and laterally attaching the base of the bracket to the second portion of the structure.

Abstract: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region defined along an optical waveguide. The absorption region includes a first type of semiconductor material having a first refractive index. The apparatus also includes a multiplication region defined along the optical waveguide. The multiplication region is proximate to and separate from the absorption region. The multiplication region includes a second type of semiconductor material having a second refractive index. The first refractive index greater than the second refractive index such that an optical beam directed through the optical waveguide is pulled towards the absorption region from the multiplication region and absorbed in the absorption region to create electron-hole pairs from the optical beam. The multiplication region includes first and second doped regions defined along the optical waveguide.

Abstract: A holder which is attachable to hospital beds for keeping wires and tubes from falling down between the mattress and the railing and from becoming entangled. The holder contains a means for attaching the holder to a bed rail. The holder also contains one or more hooks. An adjustable holder also contains a base portion, a first arcuate section containing a raised handle at the top and catches in the upper-right section. The holder also contains a second arcuate section and a release tab.

Abstract: A sliding replacement door is made of an extendable covering and a mechanism for extending the covering into the doorway and retracting it therefrom. The extendable covering includes a pair of plastic or vinyl sheets on respective spring-biased rollers, analogous to a window shade. The free ends of the sheets are attached to a movable, vertically oriented bar. The rollers are spring-biased to cause the sheets to normally be wrapped around them, and thereby pull the bar towards them. The extension mechanism causes the bar to move horizontally in a direction away from the rollers, to thereby unroll the sheets from the rollers against the spring bias, and extend them into the door opening. The extension mechanism can be a motor-operated scissors mechanism.

Abstract: A method of forming an optical device, including forming a patterned photoresist layer over a crystalline silicon layer and implanting silicon into the crystalline silicon layer to form a selectively-amorphized silicon layer, is disclosed.

Abstract: A method to form a taper in a semiconductor layer. In one embodiment, the semiconductor layer is formed on a cladding layer. A mask layer is formed on the semiconductor layer. The mask layer is patterned and etched to form at least an angled region and a thick region. An ion implantation process is performed so that the portion under the angled region is implanted to have an interface or surface that is angled relative to the surface of the cladding layer. This angled surface forms part of the vertical taper. The implanted region does not contact the cladding layer, leaving an unimplanted portion to serve as a waveguide. The portion under the thick region is not implanted, forming a coupling end of the taper.