Abstract: Systems, methods, and apparatuses for reducing context switches in a virtualized computing environment are provided herein. An example method comprises executing a supervisor, executing a first virtual machine on the supervisor, detecting a first exit from the first virtual machine, responsive to detecting the first exit, loading a userspace context without loading a supervisor context, executing a second virtual machine on the supervisor, detecting a second exit from the second virtual machine, and responsive to detecting the second exit, loading the supervisor context.

Abstract: A vapor delivery system and method is provided that is adapted for treating prostate tissue. The vapor delivery system includes a vapor delivery needle configured to deliver condensable vapor energy to tissue. In one method, the vapor delivery system is advanced transurethrally into the patient to access the prostate tissue. The vapor delivery system includes a generator unit and an inductive heating system to produce a high quality vapor for delivery to tissue. Methods of use are also provided.

Abstract: A scrap collection assembly for use with a fiber placement machine, including a scrap bin configured to receive scrap pieces of composite tape; a first roller assembly, including a roller configured to engage one side of a scrap piece of composite tape, coupled to the scrap bin; a second roller assembly, including another roller configured to engage an opposite side of the scrap piece of composite tape, coupled to the scrap bin, such that the rollers move to engage opposite sides of the scrap piece, pull the scrap piece from a fiber placement machine, and deposit the scrap piece in the scrap bin.

Abstract: A method of method of treating a semiconductor substrate. The method may include, in a beamline ion implanter, exposing a substrate surface of the semiconductor substrate to a plasma clean and exposing the substrate surface to a hydrogen treatment from a plasma source. The method may further include, in the beamline ion implanter, exposing the substrate to an implant process after formation of the hydrogen passivation, wherein the substrate is maintained under vacuum over a process duration spanning the plasma clean, the hydrogen treatment, and the implant process.

Abstract: A method of doping a substrate may include exposing a substrate surface of the semiconductor substrate to a plasma clean, performing a deposition of a dopant layer on the substrate surface using a plasma source, after the plasma clean, the dopant layer comprising a dopant element; and exposing the substrate to an implant process when the dopant layer is disposed on the substrate surface, wherein the implant process introduces an ion species comprising the dopant element into the substrate, wherein the substrate is maintained under vacuum over a process duration spanning the plasma clean, the deposition of the dopant layer, and the implant process, and wherein at least a portion of the dopant layer is implanted into the substrate during the implant process.

Abstract: A stroller system includes a stroller frame, a plurality of wheels connected to the stroller frame, a stroller seat attached to the stroller frame, a motor mounted on the stroller frame and configured to drive at least one of the plurality of wheels, a power source configured to supply power to the motor, and a controller configured to control the and thereby the movement of the stroller system.

Abstract: A fiber placement head for applying a plurality of composite tape segments on a mold, including a pre-start lane assembly having a pre-start power roller that moves a composite tape segment from a composite tape source; a restart lane assembly having a restart power roller that also moves the composite tape segment from the composite tape source; and a cutting lane assembly having a reciprocating cutting blade, wherein the pre-start power roller draws composite tape from the composite tape source and the restart power roller positions a composite tape segment on a mold.

Abstract: The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

Abstract: A fiber placement head for applying a plurality of composite tape segments on a mold, including a pre-start lane assembly having a pre-start power roller that moves a composite tape segment from a composite tape source; a restart lane assembly having a restart power roller that also moves the composite tape segment from the composite tape source; and a cutting lane assembly having a reciprocating cutting blade, wherein the pre-start power roller draws composite tape from the composite tape source and the restart power roller positions a composite tape segment on a mold.

Abstract: A survival backpack system includes a main bag, and a pair of shoulder straps for mounting the main bag on a user's shoulders. The system includes a plurality of gear packs, all the same size, and each containing a different type of survival gear. The main bag forms a plurality of gear compartments, each slightly larger than each of the plurality of gear packs, each of the plurality of gear compartments being accessible through an opening in the top panel. A hydration compartment is accessible through an opening in the bottom panel, the hydration compartment being sized and shaped to receive a hydration pack therein.

Abstract: The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

Abstract: The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

Abstract: A composting facility includes: a floor for receiving compostable material thereon, wherein the floor is constructed above-grade; a dovetail extending from the floor to allow ingress of a vehicle from a grade level to the floor; one or more channels defined within the floor and extending through the dovetail; a covering extending over the one or more channels to maintain the compostable material away from the channel, the covering defining at least one aperture extending from above the covering into the one or more channels for allowing flowthrough of gases; and an air source for providing air through the channels to provide cooling characteristics to the compostable material or oxygen to aid an aerobic process associated with composting. In operation, liquids draining from the composting material pass through the at least one aperture into the channel and out through a portion of the channel extending through the dovetail.

Abstract: The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

Abstract: An insulated electrical conductor (MI cable) may include an inner electrical conductor, an electrical insulator at least partially surrounding the electrical conductor, and an outer electrical conductor at least partially surrounding the electrical insulator. The insulated electrical conductor may have a substantially continuous length of at least about 100 m. The insulated electrical conductor may have an initial breakdown voltage, over a substantially continuous length of at least about 100 m, of at least about 60 volts per mil of the electrical insulator thickness (about 2400 volts per mm of the electrical insulator thickness) at about 1300° F. (about 700° C.) and about 60 Hz. The insulated electrical conductor may be capable of being coiled around a radius of about 100 times a diameter of the insulated electrical conductor. The outer electrical conductor may have a yield strength based on a 0.2% offset of about 100 kpsi.

Abstract: A composting facility includes: a floor for receiving compostable material thereon, wherein the floor is constructed above-grade; a dovetail extending from the floor to allow ingress of a vehicle from a grade level to the floor; one or more channels defined within the floor and extending through the dovetail; a covering extending over the one or more channels to maintain the compostable material away from the channel, the covering defining at least one aperture extending from above the covering into the one or more channels for allowing flowthrough of gases; and an air source for providing air through the channels to provide cooling characteristics to the compostable material or oxygen to aid an aerobic process associated with composting. In operation, liquids draining from the composting material pass through the at least one aperture into the channel and out through a portion of the channel extending through the dovetail.

Abstract: Methods of forming a thin film are disclosed. One such method can include sputtering a target material to form a first thin film resistor and adjusting a parameter of deposition to modulate a property of a subsequently formed second thin film resistor. For instance, a substrate bias and/or a substrate temperature can be adjusted to modulate a property of the second thin film resistor. A temperature coefficient of resistance (TCR) and/or another property of the second thin film resistor can be modulated by adjusting the parameter of deposition. The target material sputtered onto the substrate can include, for example, a Cr alloy, a Ni alloy, SiCr, NiCr, or the like. A relationship can be established between the substrate bias and/or substrate temperature and the thin film resistor property, and the relationship can be used in selecting deposition conditions for a desired property value.

Abstract: The disclosure relates to the manufacture of inductive components, in particular transformers, using a combination of microfabrication techniques and discrete component placement. By using a prefabricated core, the core may be made much thicker than one that is deposited using microfabrication techniques. As such, saturation occurs later and the efficiency of the transformer is improved. This is done at a much lower cost than the cost of producing a thicker core by depositing multiple layers using microfabrication techniques.

Abstract: A method of trimming a component is provided in which the component is protected from oxidation or changes in stress after trimming. As part of the method, a protective glass cover is bonded to the surface of a semiconductor substrate prior to trimming (e.g., laser trimming) of a component. This can protect the component from oxidation after trimming, which may change its value or a parameter of the component. It can also protect the component from changes in stress acting on it or on the die adjacent it during packaging, which may also change a value or parameter of the component.