Abstract: A laser polarization control apparatus includes a polarization modifying device, such as a liquid crystal variable retarder, and a controller. The polarization modifying device receives a laser beam and modifies the polarization of the laser beam. The controller, which is connected to the polarization modifying device, adjusts an input to the polarization modifying device in order to control modification of the polarization of the laser beam based on alignment of a structure to be processed by the laser beam. For example, the polarization of the laser beam may be rotated to correspond with the alignment of a link in a semiconductor device to be cut by the laser beam. The polarization modifying device is configured for incorporation into a laser processing system that produces the laser beam received by the polarization modifying device and that focuses the laser beam modified by the polarization modifying device onto a workpiece that includes the structure to be processed by the laser beam.

Abstract: The invention provides a system and method for vaporizing a target structure on a substrate. According to the invention, a calculation is performed, as a function of wavelength, of an incident beam energy necessary to deposit unit energy in the target structure. Then, for the incident beam energy, the energy expected to be deposited in the substrate as a function of wavelength is calculated. A wavelength is identified that corresponds to a relatively low value of the energy expected to be deposited in the substrate, the low value being substantially less than a value of the energy expected to be deposited in the substrate at a higher wavelength. A laser system is provided configured to produce a laser output at the wavelength corresponding to the relatively low value of the energy expected to be deposited in the substrate.

Abstract: A method of determining a start of scan time in a laser scanning system utilizing a scanning reflector, comprising: directing a laser beam toward the scanning reflector so as to be reflected by the scanning reflector; returning the laser beam reflected from the scanning reflector toward the scanning reflector for at least one additional reflection from the scanning reflector; detecting the laser beam reflected at least twice from the scanning reflector; and controlling the start of scan of the scanning system, responsive to the detection of the laser beam.

Abstract: A high-speed method and system for precisely positioning a waist of a material-processing laser beam to dynamically compensate for local variations in height of microstructures located on a plurality of objects spaced apart within a laser-processing site are provided. In the preferred embodiment, the microstructures are a plurality of conductive lines formed on a plurality of memory dice of a semiconductor wafer. The system includes a focusing lens subsystem for focusing a laser beam along an optical axis substantially orthogonal to a plane, an x-y stage for moving the wafer in the plane, and a first air bearing sled for moving the focusing lens subsystem along the optical axis.

Abstract: A high-speed method and system for precisely positioning a waist of a material-processing laser beam to dynamically compensate for local variations in height of microstructures located on a plurality of objects spaced apart within a laser-processing site are provided. In the preferred embodiment, the microstructures are a plurality of conductive lines formed on a plurality of memory dice of a semiconductor wafer. The system includes a focusing lens subsystem for focusing a laser beam along an optical axis substantially orthogonal to a plane, an x-y stage for moving the wafer in the plane, and a first air bearing sled for moving the focusing lens subsystem along the optical axis.

Abstract: The invention provides a system and method for vaporizing a target structure on a substrate. According to the invention, a calculation is performed, as a function of wavelength, of an incident beam energy necessary to deposit unit energy in the target structure. Then, for the incident beam energy, the energy expected to be deposited in the substrate as a function of wavelength is calculated. A wavelength is identified that corresponds to a relatively low value of the energy expected to be deposited in the substrate, the low value being substantially less than a value of the energy expected to be deposited in the substrate at a higher wavelength. A laser system is provided configured to produce a laser output at the wavelength corresponding to the relatively low value of the energy expected to be deposited in the substrate.

Abstract: A high-speed method and system for precisely positioning a waist of a material-processing laser beam to dynamically compensate for local variations in height of microstructures located on a plurality of objects spaced apart within a laser-processing site are provided. In the preferred embodiment, the microstructures are a plurality of conductive lines formed on a plurality of memory dice of a semiconductor wafer. The system includes a focusing lens subsystem for focusing a laser beam along an optical axis substantially orthogonal to a plane, an x-y stage for moving the wafer in the plane, and a first air bearing sled for moving the focusing lens subsystem along the optical axis.

Abstract: The invention provides a system and method for vaporizing a target structure on a substrate. According to the invention, a calculation is performed, as a function of wavelength, of an incident beam energy necessary to deposit unit energy in the target structure. Then, for the incident beam energy, the energy expected to be deposited in the substrate as a function of wavelength is calculated. A wavelength is identified that corresponds to a relatively low value of the energy expected to be deposited in the substrate, the low value being substantially less than a value of the energy expected to be deposited in the substrate at a higher wavelength. A laser system is provided configured to produce a laser output at the wavelength corresponding to the relatively low value of the energy expected to be deposited in the substrate.

Abstract: A high-speed method and system for precisely positioning a waist of a material-processing laser beam to dynamically compensate for local variations in height of microstructures located on a plurality of objects spaced apart within a laser-processing site are provided. In the preferred embodiment, the microstructures are a plurality of conductive lines formed on a plurality of memory dice of a semiconductor wafer. The system includes a focusing lens subsystem for focusing a laser beam along an optical axis substantially orthogonal to a plane, an x-y stage for moving the wafer in the plane, and a first air bearing sled for moving the focusing lens subsystem along the optical axis.

Abstract: A high-speed method and system for precisely positioning a waist of a material-processing laser beam to dynamically compensate for local variations in height of microstructures located on a plurality of objects spaced apart within a laser-processing site are provided. In the preferred embodiment, the microstructures are a plurality of conductive lines formed on a plurality of memory dice of a semiconductor wafer. The system includes a focusing lens subsystem for focusing a laser beam along an optical axis substantially orthogonal to a plane, an x-y stage for moving the wafer in the plane, and a first air bearing sled for moving the focusing lens subsystem along the optical axis.

Abstract: The invention provides a system and method for vaporizing a target structure on a substrate. According to the invention, a calculation is performed, as a function of wavelength, of an incident beam energy necessary to deposit unit energy in the target structure. Then, for the incident beam energy, the energy expected to be deposited in the substrate as a function of wavelength is calculated. A wavelength is identified that corresponds to a relatively low value of the energy expected to be deposited in the substrate, the low value being substantially less than a value of the energy expected to be deposited in the substrate at a higher wavelength. A laser system is provided configured to produce a laser output at the wavelength corresponding to the relatively low value of the energy expected to be deposited in the substrate.

Abstract: A high-speed method and system for precisely positioning a waist of a material-processing laser beam to dynamically compensate for local variations in height of microstructures located on a plurality of objects spaced apart within a laser-processing site are provided. In the preferred embodiment, the microstructures are a plurality of conductive lines formed on a plurality of memory dice of a semiconductor wafer. The system includes a focusing lens subsystem for focusing a laser beam along an optical axis substantially orthogonal to a plane, an x-y stage for moving the wafer in the plane, and a first air bearing sled for moving the focusing lens subsystem along the optical axis. The reference data is generated by the system which includes a modulator for reducing power of the material-processing laser beam to obtain a probe laser beam to measure height of the semiconductor wafer at a plurality of locations about the site to obtain reference height data.

Abstract: A laser polarization control apparatus includes a polarization modifying device, such as a liquid crystal variable retarder, and a controller. The polarization modifying device receives a laser beam and modifies the polarization of the laser beam. The controller, which is connected to the polarization modifying device, adjusts an input to the polarization modifying device in order to control modification of the polarization of the laser beam based on alignment of a structure to be processed by the laser beam. For example, the polarization of the laser beam may be rotated to correspond with the alignment of a link in a semiconductor device to be cut by the laser beam. The polarization modifying device is configured for incorporation into a laser processing system that produces the laser beam received by the polarization modifying device and that focuses the laser beam modified by the polarization modifying device onto a workpiece that includes the structure to be processed by the laser beam.

Abstract: A high-speed method and system for precisely positioning a waist of a material-processing laser beam to dynamically compensate for local variations in height of microstructures located on a plurality of objects spaced apart within a laser-processing site are provided. In the preferred embodiment, the microstructures are a plurality of conductive lines formed on a plurality of memory dice of a semiconductor wafer. The system includes a focusing lens subsystem for focusing a laser beam along an optical axis substantially orthogonal to a plane, an x-y stage for moving the wafer in the plane, and a first air bearing sled for moving the focusing lens subsystem along the optical axis.

Abstract: A laser polarization control apparatus includes a polarization modifying device and a controller. The polarization modifying device receives a laser beam and modifies the polarization of the laser beam. The controller adjusts an input to the polarization modifying device in order to control modification of the polarization of the laser beam based on alignment of a structure to be processed by the laser beam. The polarization modifying device is configured for incorporation into a laser processing system that produces the laser beam received by the polarization modifying device and that focuses the laser beam modified by the polarization modifying device onto a workpiece that includes the structure to be processed by the laser beam. An analyzer tool receives the laser beam modified by the polarization modification device and measures the modification of the polarization of the laser beam by the polarization modification device.

Abstract: The invention provides a system and method for vaporizing a target structure on a substrate. According to the invention, a calculation is performed, as a function of wavelength, of an incident beam energy necessary to deposit unit energy in the target structure. Then, for the incident beam energy, the energy expected to be deposited in the substrate as a function of wavelength is calculated. A wavelength is identified that corresponds to a relatively low value of the energy expected to be deposited in the substrate, the low value being substantially less than a value of the energy expected to be deposited in the substrate at a higher wavelength. A laser system is provided configured to produce a laser output at the wavelength corresponding to the relatively low value of the energy expected to be deposited in the substrate.

Abstract: The invention provides a system and method for vaporizing a target structure on a substrate. According to the invention, a calculation is performed, as a function of wavelength, of an incident beam energy necessary to deposit unit energy in the target structure. Then, for the incident beam energy, the energy expected to be deposited in the substrate as a function of wavelength is calculated. A wavelength is identified that corresponds to a relatively low value of the energy expected to be deposited in the substrate, the low value being substantially less than a value of the energy expected to be deposited in the substrate at a higher wavelength. A laser system is provided configured to produce a laser output at the wavelength corresponding to the relatively low value of the energy expected to be deposited in the substrate.

Abstract: A laser polarization control apparatus includes a polarization modifying device, such as a liquid crystal variable retarder, and a controller. The polarization modifying device receives a laser beam and modifies the polarization of the laser beam. The controller, which is connected to the polarization modifying device, adjusts an input to the polarization modifying device in order to control modification of the polarization of the laser beam based on alignment of a structure to be processed by the laser beam. For example, the polarization of the laser beam may be rotated to correspond with the alignment of a link in a semiconductor device to be cut by the laser beam. The polarization modifying device is configured for incorporation into a laser processing system that produces the laser beam received by the polarization modifying device and that focuses the laser beam modified by the polarization modifying device onto a workpiece that includes the structure to be processed by the laser beam.

Abstract: A scanner for scanning a beam across a surface, such as a photosensitive surface or a document, the scanner comprising: a plurality of multi-faceted polygon disks, mounted for common rotation on an axis; a plurality of data modulated beams, wherein one of said beams is configured to impinge on the facets of one of the disks and be reflected therefrom toward the surface.

Abstract: A laser polarization control apparatus includes a polarization modifying device, such as a liquid crystal variable retarder, and a controller. The polarization modifying device receives a laser beam and modifies the polarization of the laser beam. The controller, which is connected to the polarization modifying device, adjusts an input to the polarization modifying device in order to control modification of the polarization of the laser beam based on alignment of a structure to be processed by the laser beam. For example, the polarization of the laser beam may be rotated to correspond with the alignment of a link in a semiconductor device to be cut by the laser beam. The polarization modifying device is configured for incorporation into a laser processing system that produces the laser beam received by the polarization modifying device and that focuses the laser beam modified by the polarization modifying device onto a workpiece that includes the structure to be processed by the laser beam.