Abstract: Provided is a ribbon structure which may be used as part of a micro-assembly including a micro-device formed on or in a device layer of a single crystal silicon substrate. The ribbon structure is also formed in the device layer, where the ribbon structure is thinned to a thickness less than the thickness of the micro-device. The ribbon structure has an electrical conductive material deposited on its surface. When implemented as part of the micro-assembly, a first end of the micro-device and a first end of a ribbon structure are interconnected, wherein the ribbon structure and out-of-plane device are formed as a single piece.