Abstract: A thin film compound semiconductor electrode comprisingCdSe.sub.1-x Te.sub.x (0.ltoreq.x.ltoreq.1)is deposited on a transparent conductive substrate. An electrolyte contacts the film to form a photoactive site. The semiconductor material has a narrow energy bandgap permitting high efficiency for light conversion. The film may be fabricated by: (1) co-evaporation of two II-VI group compounds with a common cation, or (2) evaporation of three elements, concurrenty.

Abstract: Photoelectrochemical cell structures and methods of fabrication are disclosed which provide for easily manufactured efficient energy conversion devices. The structures incorporate one or more chambers for the electrolyte, and utilize semiconductor photoelectrodes. In the plural chamber structure, the semiconductor may be opaque, and need not necessarily be a thin film. Specific dopants for the semiconductor provide for decreased dark current and increased open circuit voltage. Post deposition treatment is disclosed for the semiconductor to provide an increased shorting current. Increased sputtering wattage is provided to increase the short circuit current available from the cell. An electrolyte composition is described having improved performance at high light intensity.

Abstract: Photoelectrochemical cell structures and methods of fabricaton are disclosed which provide for easily manufactured efficient energy conversion devices. The structures incorporate one or more chambers for the electrolyte, and utilize semiconductor photoelectrodes. In the plural chamber structure, the semiconductor may be opaque, and need not necessarily be a thin film. Specific dopants for the semiconductor provide for decreased dark current and increased open circuit voltage. Post deposition treatment is disclosed for the semiconductor to provide an increased shorting current. Increased sputtering wattage is provided to increase the short circuit current available from the cell. An electrolyte composition is described having improved performance at high light intensity.In a multi-chamber embodiment, the electrode placement causes the photoactive site to be at an end of the chamber removed from the irradiation window, thereby permitting the use of non-transparent photoelectrodes.

Abstract: A photogalvanic cell includes a glass substrate with a transparent electrode which receives irradiating light energy. A second electrode is positioned in spaced relationship from the first electrode and has a thin film of charge storing tungsten oxide deposited thereon. Spaced from both the transparent electrode and the tungsten oxide thin film is a counterelectrode. An electrolyte having TiO.sub.2 powder mixed therein forms a photoactive site at the surface of the transparent electrode. By physically separating the tungsten oxide thin film from the transparent electrode, more light irradiates the TiO.sub.2 thereby increasing the photoconversion of the cell.

Abstract: A sealed device includes an electrode having a semiconductor thin film coating. A liquid electrolyte contacts the thin film to form a photoactive interface which converts light energy to electrical energy. A counterelectrode is positioned in spaced relation to the electrode and also contacts the electrolyte. Leads are connected to the electrode and counterelectrode so that a load may be driven by the device when the device is exposed to light.

Abstract: A photogalvanic cell includes a conducting SnO.sub.2 electrode upon which is deposited a semi-transparent film of Ti. A metal oxide thin film, such as TiO.sub.2 is in turn deposited upon the semi-transparent Ti thin film. An aqueous (acid or base) electrolyte contacts the metal oxide thin film to form a photoactive site for converting light to electrical energy. The semi-transparent film reduces the internal resistance of the cell by assisting charge transfer between the metal oxide film and the electrode. Also, use of a semi-transparent film permits bi-directional irradiation of the cell to increase photoconversion efficiency.