Abstract: A system for electromigration testing is disclosed. The system includes a conductive member, a cap layer of insulative material over at least a portion of a top surface of the conductive member, a cathode conductively connected to a first end of the conductive member; an anode conductively connected to a second end of the conductive member, and a current source conductively connected to the cathode and the anode. A plurality of sensory pins are disposed along a length of the conductive member between the first end and the second end of the conductive member. The sensory pins are conductively connected to a bottom surface of the conductive member. At least one measurement device is conductively connected to at least one sensory pin of the plurality of sensory pins. The at least one measurement device determines a resistance of at least one portion of the conductive member.

Abstract: Disclosed are test structures and methods for non-planar field effect transistors. The test structures comprise test device(s) on an insulator layer. Each device comprises semiconductor fin(s). Each fin has a first portion comprising a pseudo channel region at one end and a second portion comprising a diffusion region positioned laterally adjacent to the first portion. A gate with sidewall spacers can be adjacent to the first portion of the fin(s). A first contact can be on the insulator layer adjacent the end of the fin(s). A second contact can be on the second portion of the fin(s) such that the gate is positioned laterally between the contacts. Measurements taken when the first contact is biased against the gate are compared to measurements taken when the second contact is biased against the gate in order to assess lateral dielectric breakdown between the gate and first contact independent of gate dielectric breakdown.

Abstract: A system for electromigration testing is disclosed. The system includes a conductive member, a cap layer of insulative material over at least a portion of a top surface of the conductive member, a cathode conductively connected to a first end of the conductive member; an anode conductively connected to a second end of the conductive member, and a current source conductively connected to the cathode and the anode. A plurality of sensory pins are disposed along a length of the conductive member between the first end and the second end of the conductive member. The sensory pins are conductively connected to a bottom surface of the conductive member. At least one measurement device is conductively connected to at least one sensory pin of the plurality of sensory pins. The at least one measurement device determines a resistance of at least one portion of the conductive member.

Abstract: Device structures that exhibit negative resistance characteristics and fabrication methods for such device structures. A signal is applied to a metal layer of a metal-insulator-semiconductor capacitor to cause a breakdown of an insulator layer of the metal-insulator-semiconductor capacitor at a location. The breakdown at the location of the insulator layer causes the metal-insulator-semiconductor capacitor to exhibit negative resistance. The metal layer may be comprised of a polycrystalline metal. A grain of the polycrystalline metal may penetrate through the insulator layer and into a portion of a substrate at the location of the breakdown.

Abstract: Disclosed are test structures and methods for non-planar field effect transistors. The test structures comprise test device(s) on an insulator layer. Each device comprises semiconductor fin(s). Each fin has a first portion comprising a pseudo channel region at one end and a second portion comprising a diffusion region positioned laterally adjacent to the first portion. A gate with sidewall spacers can be adjacent to the first portion of the fin(s). A first contact can be on the insulator layer adjacent the end of the fin(s). A second contact can be on the second portion of the fin(s) such that the gate is positioned laterally between the contacts. Measurements taken when the first contact is biased against the gate are compared to measurements taken when the second contact is biased against the gate in order to assess lateral dielectric breakdown between the gate and first contact independent of gate dielectric breakdown.

Abstract: Test structures for simultaneously testing for electromigration or stress migration fails and time dependent dielectric breakdown fails in integrated circuits, test circuits using four test structures arranged as a bridge balance circuit and methods of testing using the test circuits. The electromigration or stress migration portions of the test structures include via chains of wire segments connected in series by electrically conductive vias, the wire segments formed in at least two adjacent wiring levels of an integrated circuit. The time dependent dielectric breakdown portions of the test structures include digitized wire structures in one of the at least two adjacent wiring levels adjacent to a less than whole portion of the wire segments in the same wiring level as the digitized wire structures.

Abstract: Aspects of the invention provide a semiconductor tunneling device including voltage controlled negative resistance. In one embodiment, the semiconductor tunneling device includes: at least one pair of spaced apart terminals; an inter-level dielectric (ILD) layer between the at least one pair of spaced apart terminals; and a dielectric capping layer extending continuously over the at least one pair of spaced apart terminals and the ILD layer.

Abstract: Aspects of the invention provide a semiconductor tunneling device including voltage controlled negative resistance. In one embodiment, the semiconductor tunneling device includes: at least one pair of spaced apart terminals; an inter-level dielectric (ILD) layer between the at least one pair of spaced apart terminals; and a dielectric capping layer extending continuously over the at least one pair of spaced apart terminals and the ILD layer.

Abstract: Test structures for simultaneously testing for electromigration or stress migration fails and time dependent dielectric breakdown fails in integrated circuits, test circuits using four test structures arranged as a bridge balance circuit and methods of testing using the test circuits. The electromigration or stress migration portions of the test structures include via chains of wire segments connected in series by electrically conductive vias, the wire segments formed in at least two adjacent wiring levels of an integrated circuit. The time dependent dielectric breakdown portions of the test structures include digitized wire structures in one of the at least two adjacent wiring levels adjacent to a less than whole portion of the wire segments in the same wiring level as the digitized wire structures.