Abstract: A phase shifter is fed an input signal having a frequency f. A coupler is included fed by the input signal. The coupler has a pair of output terminals for providing a pair of signals having the frequency f and having a relative phase shift difference of m?/2 radians, where m is an integer. A switch is included having a pair of inputs, each one of the pair of inputs being coupled to a corresponding one of the pair of output terminals of the coupler. The switch has an output, one of the pair of inputs of the switch being coupled to the output of the switch selectively in accordance with a first control signal fed to the switch.

Abstract: A method includes providing a single crystal wafer having MMIC chips. Each chip has an active device in a first surface portion of a semiconductor substrate provided by the wafer and an electrical interconnect having a first portion disposed on a second surface of the semiconductor substrate. The semiconductor substrate structure has a via therethrough, a second portion of the electrical interconnect passing though the via and being electrically connected to the active device. A multilayer interconnect structure is formed on the wafer providing a signal routing section on the second surface portion of a corresponding one of the chips. Each section has dielectric layers and an electrically conductors, such electrical conductor being electrically coupled to the active device to route an electrical signal to such active device. Each chip and the corresponding signal routing section are separated from the wafer.

Abstract: A semiconductor structure having: a III-V substrate structure; an enhancement mode transistor device disposed in a first region of the structure; a depletion mode transistor device disposed in a laterally displaced second region of the structure; and a RF/microwave/milli-meter wave transistor device formed in a laterally displaced third region thereof.

Abstract: A field effect transistor structure having a field effect transistor; a field plate disposed between a gate electrode of the transistor and a drain electrode of the transistor; and a resistive interconnect electrically connected between the gate electrode and the field plate. With such an arrangement, the field plate is RF decoupled from the gate.

Abstract: A circuit for sensing radio frequency energy. The circuit includes a Wheatstone bridge having at least one element thereof thermally responsive to the radio frequency energy passing therethough differently from radio frequency energy passing though at least one other element of the bridge.

Abstract: A circuit for determining temperature of an active semiconductor device disposed on a semiconductor substrate and a Wheatstone bridge circuit. The bridge has in each of four branches thereof a thermal sensitive device, one pair of such thermal sensitive devices being in thermal contact with an electrode of the active device. Another pair of such thermal sensitive devices is in thermal contact with the substrate. The thermal sensitive devices are resistors. The active device is a transistor. A tuning circuit is coupled to an output of the transistor, such tuning circuit having a tunable element controlled by a control signal fed to such tunable element. A processor is responsive to a voltage produced at an output of the Wheatstone bridge circuit and a signal representative of power fed to the transistor. The output provided by the Wheatstone bridge provides a measure of a temperature difference between the temperature of the transistor and ambient temperature.

Abstract: An amplifier is provided having an electrically conductive structure. The structure has a waveguide network disposed in an inner region thereof. The network has an input section and an output section. The conductive structure has an amplifier input port and amplifier output port formed in outer wall portions of such structure. The network also includes a plurality of amplifier module input ports disposed in an outer surface of the structure. The amplifier input ports are coupled to the amplifier port through the input section of the network. The network further includes a plurality of amplifier module output ports disposed in said outer surface of the structure. The amplifier module output ports are coupled to the amplifier output port through the output section of the network. Each one of the amplifier module output ports is associated with one of the plurality of amplifier module input ports. The amplifier includes a plurality of amplifier modules.

Abstract: An amplifier is provided having an electrically conductive structure. The structure has a waveguide network disposed in an inner region thereof. The network has an input section and an output section. The conductive structure has an amplifier input port and amplifier output port formed in outer wall portions of such structure. The network also includes a plurality of amplifier module input ports disposed in an outer surface of the structure. The amplifier input ports are coupled to the amplifier port through the input section of the network. The network further includes a plurality of amplifier module output ports disposed in said outer surface of the structure. The amplifier module output ports are coupled to the amplifier output port through the output section of the network. Each one of the amplifier module output ports is associated with one of the plurality of amplifier module input ports. The amplifier includes a plurality of amplifier modules.