Patents by Inventor Michael Amaud QUINSAT

Michael Amaud QUINSAT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9886199
    Abstract: According to one embodiment, a magnetic memory device includes a first memory unit including a first memory array and a first drive unit, a second memory unit including a second memory array and a second drive unit, and a controller. The first memory array includes a first magnetic shift register unit. The second memory array includes a second magnetic shift register unit. The controller subdivides input data into a plurality of one-dimensional bit input arrays. The one-dimensional bit input arrays include a first array and a second array. The controller stores the first array in the first magnetic shift register unit on a last in, first out basis, and stores the second array in the second magnetic shift register unit on a last in, first out basis.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: February 6, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsuyoshi Kondo, Hirofumi Morise, Yasuaki Ootera, Takuya Shimada, Michael Amaud Quinsat, Yoshiaki Osada, Yoshihisa Iwata
  • Publication number: 20170069829
    Abstract: According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.
    Type: Application
    Filed: August 26, 2016
    Publication date: March 9, 2017
    Inventors: Hirofumi MORISE, Tsuyoshi KONDO, Yasuaki OOTERA, Takuya SHIMADA, Michael Amaud QUINSAT, Shiho NAKAMURA
  • Publication number: 20160224242
    Abstract: According to one embodiment, a magnetic memory device includes a first memory unit including a first memory array and a first drive unit, a second memory unit including a second memory array and a second drive unit, and a controller. The first memory array includes a first magnetic shift register unit. The second memory array includes a second magnetic shift register unit. The controller subdivides input data into a plurality of one-dimensional bit input arrays. The one-dimensional bit input arrays include a first array and a second array. The controller stores the first array in the first magnetic shift register unit on a last in, first out basis, and stores the second array in the second magnetic shift register unit on a last in, first out basis.
    Type: Application
    Filed: January 27, 2016
    Publication date: August 4, 2016
    Inventors: Tsuyoshi KONDO, Hirofumi MORISE, Yasuaki OOTERA, Takuya SHIMADA, Michael Amaud QUINSAT, Yoshiaki OSADA, Yoshihisa IWATA