Patents by Inventor Michael Antoine Zandt

Michael Antoine Zandt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7659169
    Abstract: There is a method of manufacturing a semiconductor device with a dual gate field effect transistor, the method including a semiconductor body a semiconductor material having a surface with a source region and a drain region of a first conductivity type and with a channel region of a second conductivity type opposite to the first conductivity type between the source region and the drain region and with a first gate region separated from the surface of the semiconductor body by a first gate dielectric above the channel region and with a second gate region situated opposite to the first gate region and formed within a recess in an opposite surface of the semiconductor body so as to be separated from the channel region by a second gate dielectric wherein the recess is formed with a local change of the doping of the channel region and by etching starting from the opposite surface of the semiconductor body.
    Type: Grant
    Filed: August 10, 2005
    Date of Patent: February 9, 2010
    Assignee: NXP B.V.
    Inventors: Radu Surdeanu, Erwin Hijzen, Michael Antoine Zandt, Raymond Josephus Hueting
  • Publication number: 20080194069
    Abstract: The invention relates to a method of manufacturing a semiconductor device (1.
    Type: Application
    Filed: August 10, 2005
    Publication date: August 14, 2008
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Radu Surdeanu, Erwin Hijzen, Michael Antoine Zandt, Raymond Josephus Hueting