Patents by Inventor Michael Aumer

Michael Aumer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11939200
    Abstract: Apparatus for treating containers includes a handling device for the containers wherein the handling devices has a movable carrier with which the containers can be moved on a transport path, and wherein the handling devices is assigned at least one handling station, wherein the transport speed of the handling device can be controlled in such a way that the transport speed of the handling device can be synchronised with the transport speed of the transport device and/or a further transport device during transfer and/or discharge of the containers and the transport speed of the handling device can be reduced after the transfer of the containers.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: March 26, 2024
    Assignee: KRONES AG
    Inventors: Tobias Raith, Martin Kammerl, Klaus Voth, Eduard Handschuh, Robert Aumer, Jochen Krueger, Michael Neubauer
  • Patent number: 7888248
    Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.
    Type: Grant
    Filed: July 13, 2007
    Date of Patent: February 15, 2011
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Narsingh Bahadur Singh, Brian P. Wagner, David J. Knuteson, David Kahler, Andre E. Berghmans, Michael Aumer, Jerry W. Hedrick, Marc E. Sherwin, Michael M. Fitelson, Mark S. Usefara, Sean McLaughlin, Travis Randall, Thomas J. Knight
  • Publication number: 20090014756
    Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.
    Type: Application
    Filed: July 13, 2007
    Publication date: January 15, 2009
    Inventors: Narsingh Bahadur Singh, Brian P. Wagner, David J. Knuteson, David Kahler, Andre E. Berghmans, Michael Aumer, Jerry W. Hedrick, Marc E. Sherwin, Michael M. Fitelson, Mark S. Usefara, Sean McLaughlin, Travis Randall, Thomas J. Knight
  • Publication number: 20060088978
    Abstract: A substrate arrangement for high power semiconductor devices includes a SiC wafer having a Si layer deposited on a surface of the SiC wafer. An SOI structure having a first layer of Si, an intermediate layer of SiO2 and a third layer of Si, has its third layer of Si bonded to the Si deposited on the SiC wafer, forming a unitary structure. The first layer of Si and the intermediate layer of SiO2 of the SOI are removed, leaving a pure third layer of Si on which various semiconductor devices may be fabricated. The third layer of Si and deposited Si layer may be removed over a portion of the substrate arrangement such that one or more semiconductor devices may be fabricated on the SiC wafer while other semiconductor devices may be accommodated on the pure third layer of Si.
    Type: Application
    Filed: October 13, 2005
    Publication date: April 27, 2006
    Inventors: Rowland Clarke, Robert Howell, Michael Aumer
  • Publication number: 20060081856
    Abstract: A wide bandgap semiconductor material comprised of Silicon carbide containing a predetermined portion of germanium.
    Type: Application
    Filed: October 18, 2004
    Publication date: April 20, 2006
    Inventors: Narsingh Singh, Andre Berghmans, Tracy Waite, Michael Aumer, Hong Zhang, Darren Thomson, David Kahler, Abigail Kirschenbaum
  • Publication number: 20060057790
    Abstract: A HEMT type device which has pillars with vertical walls perpendicular to a substrate. The pillars are of an insulating semiconductor material such as GaN. Disposed on the side surfaces of the pillars is a barrier layer of a semiconductor material such as AlGaN having a bandgap greater than that of the insulating material of the pillars. Electron flow is confined to a narrow channel at the interface of the two materials. Suitable source, drain and gate contacts are included for HEMT operation.
    Type: Application
    Filed: September 13, 2004
    Publication date: March 16, 2006
    Inventors: Rowland Clarke, Michael Aumer