Abstract: A radiation detector unit includes at least one radiation sensor having pixel detectors that generate event detection signals in response to photon interaction events, an application specific integrated circuit (ASIC) including circuit components on a substrate, the at least one radiation sensor mounted over the application specific integrated circuit via a plurality of bonding material portions such that event detection signals generated in each of the pixel detectors of the at least one radiation sensor are received at a respective pixel region of the ASIC, and the circuit components of the ASIC convert the event detection signals received at each of the pixel regions of the ASIC to digital detection signals, and a carrier board underlying the ASIC, where the ASIC includes a plurality of through-substrate vias (TSVs) electrically coupling the ASIC to the carrier board, each of the TSVs underlying an active pixel detector of the at least one radiation sensor.

Abstract: An X-ray detector module of a multi-module X-ray detector array having a local processing unit configured to provide real-time control and computational capabilities at the x-ray detector module. In various embodiments, by providing these capabilities in the detector module itself, as opposed to a component located downstream of the detector module, there may be an immediate cost reduction, opportunities to include additional features, and performance improvement opportunities not otherwise practical to implement in conventional X-ray imaging systems.

Abstract: A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.

Abstract: A radiation detector unit includes a read-out integrated circuit (ROIC) including a plurality of core circuit blocks located on a continuous uninterrupted substrate adjacent to one another along a first direction, and a plurality of radiation sensors bonded to a front side surface of the ROIC, where each radiation sensor of the plurality of radiation sensors is bonded to a respective core circuit block of the plurality of core circuit blocks of the ROIC. Additional embodiments include detector modules and detector arrays formed by assembling the detector units, and methods of operating and manufacturing the same.

Abstract: A radiation detector module includes a frame, a module circuit board connected to the frame, detector units that each include radiation sensors disposed above the frame and electrically connected to the module circuit board, and an optically and infrared radiation opaque, X-ray transparent, electrically insulating detector shield covering a top surface and at least one side surface of the radiation sensors.

Abstract: A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.

Abstract: Various aspects include methods and devices for reducing the scanning time for an X-ray diffraction scanner system by increasing the count rate or efficiency of the energy discriminating X-ray detector. In a first embodiment, the count rate of the energy discriminating X-ray detector is increased by increasing the number of detectors counting X-ray scatter photon in particular energy bins by configuring individual pixel detectors within a 2-D X-ray detector array to count photons within specific energy bins. In a second embodiment, the gain of amplifier components in the detector processing circuitry is increased in order to increase the energy resolution of the detector. In a third embodiment, the individual pixel detectors within a 2-D X-ray detector array are configured to count photons within specific energy bins and the gain of amplifier components in the detector processing circuitry is increased in order to increase the energy resolution of the detector.

Abstract: A radiation detector module includes a frame, a module circuit board connected to the frame, detector units that each include radiation sensors disposed above the frame and electrically connected to the module circuit board, and an optically and infrared radiation opaque, X-ray transparent, electrically insulating detector shield covering a top surface and at least one side surface of the radiation sensors.

Abstract: A radiation detector unit includes an interposer, at least one radiation sensor bonded to a front side of an interposer, an application-specific integrated chip (ASIC) bonded to a backside of the interposer, a carrier board bonded to the backside of the interposer and located on a backside of the ASIC, and at least one flex cable assembly attached to a respective side of the carrier board.

Abstract: Various aspects include methods and devices for reducing the scanning time for an X-ray diffraction scanner system by increasing the count rate or efficiency of the energy discriminating X-ray detector. In a first embodiment, the count rate of the energy discriminating X-ray detector is increased by increasing the number of detectors counting X-ray scatter photon in particular energy bins by configuring individual pixel detectors within a 2-D X-ray detector array to count photons within specific energy bins. In a second embodiment, the gain of amplifier components in the detector processing circuitry is increased in order to increase the energy resolution of the detector. In a third embodiment, the individual pixel detectors within a 2-D X-ray detector array are configured to count photons within specific energy bins and the gain of amplifier components in the detector processing circuitry is increased in order to increase the energy resolution of the detector.

Abstract: A radiation detector unit includes an interposer, at least one radiation sensor bonded to a front side of an interposer, an application-specific integrated chip (ASIC) bonded to a backside of the interposer, a carrier board bonded to the backside of the interposer and located on a backside of the ASIC, and at least one flex cable assembly attached to a respective side of the carrier board.

Abstract: A cathode conductive strip can be attached to a semiconductor radiation sensor by using a double sided dual adhesive electrically conductive tape in a sensor assembly or a detector module to provide reliable electrical connection between the semiconductor radiation sensor and the cathode conductive strip. The double sided dual adhesive electrically conductive tape includes an electrically conductive backing with two different adhesion strength adhesives on both sides. The high adhesion strength side is bonded to the cathode electrode of the semiconductor radiation sensor. The lower adhesion strength side is bonded to the conductive face of the cathode conductive strip.

Abstract: A cathode conductive strip can be attached to a semiconductor radiation sensor by using a double sided dual adhesive electrically conductive tape in a sensor assembly or a detector module to provide reliable electrical connection between the semiconductor radiation sensor and the cathode conductive strip. The double sided dual adhesive electrically conductive tape includes an electrically conductive backing with two different adhesion strength adhesives on both sides. The high adhesion strength side is bonded to the cathode electrode of the semiconductor radiation sensor. The lower adhesion strength side is bonded to the conductive face of the cathode conductive strip.

Abstract: The present invention provides a solder bump structure. In one aspect, the solder bump structure is utilized in a semiconductor device, such as an integrated circuit. The semiconductor device comprises active devices located over a semiconductor substrate, interconnect layers comprising copper formed over the active devices, and an outermost metallization layer positioned over the interconnect layers. The outermost metallization layer comprises aluminum and includes at least one bond pad and at least one interconnect runner each electrically connected to an interconnect layer. An under bump metallization layer (UBM) is located over the bond pad, and a solder bump is located over the UBM.

Abstract: A method and apparatus for determining whether an integrated circuit has been subjected to stress conditions during operation. The integrated circuit comprises a test device that is exposed to the same power supply voltage and temperature as other devices in the integrated circuit. Certain expected operating parameters, as a function of the operating life of the integrated circuit, are predetermined. If a measured value of the operating parameter exceeds the expected value then the integrated circuit has been subjected to stress conditions.