Abstract: A method and apparatus for megasonic cleaning of semiconductor wafers. The wafer is positioned so that the surface to be cleansed is parallel to and faces the radiating surface of a quartz or similar resonator which receives sonic waves through a liquid medium from a transducer. The sonic waves striking the wafer are preferably at about a 5° to 30° offset angle from a normally directed wave to the plane of the wafer. The layered medium is gasified and serves to couple the transducer to the resonator. A layer of degasified cleaning fluid is positioned between the resonator and the wafer.

Abstract: The present invention provides a megasonic cleaning apparatus configured to provide effective cleaning of a substrate without causing damage to the substrate. The apparatus includes a probe having one of a variety of cross-sections configured to decrease the ratio of normal-incident waves to shallow-angle waves. One such cross-section includes a channel running along a portion of the lower edge of the probe. Another cross-section includes a narrow lower edge of the probe. Another cross-section is elliptical. Another cross-section includes transverse bores originating in the lower edge of the probe. As an alternative to, or in addition to, providing a probe having a cross-section other than circular, the present invention may also provide a probe having a roughened lower surface.

Abstract: The present invention provides a megasonic cleaning apparatus configured to provide effective cleaning of a substrate without causing damage to the substrate. The apparatus includes a probe having one of a variety of cross-sections configured to decrease the ratio of normal-incident waves to shallow-angle waves. One such cross-section includes a channel running along a portion of the lower edge of the probe. Another cross-section includes a narrow lower edge of the probe. Another cross-section is elliptical. Another cross-section includes transverse bores originating in the lower edge of the probe. As an alternative to, or in addition to, providing a probe having a cross-section other than circular, the present invention may also provide a probe having a roughened lower surface.

Abstract: The present invention provides a megasonic cleaning apparatus configured to provide effective cleaning of a substrate without causing damage to the substrate. The apparatus includes a probe having one of a variety of cross-sections configured to decrease the ratio of normal-incident waves to shallow-angle waves. One such cross-section includes a channel running along a portion of the lower edge of the probe. Another cross-section includes a narrow lower edge of the probe. Another cross-section is elliptical. Another cross-section includes transverse bores originating in the lower edge of the probe. As an alternative to, or in addition to, providing a probe having a cross-section other than circular, the present invention may also provide a probe having a roughened lower surface.

Abstract: The present invention provides a megasonic cleaning apparatus configured to provide effective cleaning of a substrate without causing damage to the substrate. The apparatus includes a probe having one of a variety of cross-sections configured to decrease the ratio of normal-incident waves to shallow-angle waves. One such cross-section includes a channel running along a portion of the lower edge of the probe. Another cross-section includes a narrow lower edge of the probe. Another cross-section is elliptical. Another cross-section includes transverse bores originating in the lower edge of the probe. As an alternative to, or in addition to, providing a probe having a cross-section other than circular, the present invention may also provide a probe having a roughened lower surface.

Abstract: Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected into the lower end of the tank and allowed to overflow at the upper end. One solution has one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution has highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The solutions are initiated either by injecting the chemicals into an incoming DI water line or directly into the tank. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy.

Abstract: Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected into the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The solutions are initiated either by injecting the chemicals into an incoming DI water line or directly into the tank. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy.

Abstract: A dryer for processing semiconductor substrates which rotates a carrier containing the substrates within a housing in combination with a bubbler which heats and directs a gas containing a water tension reducing vapor to the housing to contact the substrates and thereby hasten drying, decrease water marking, and decrease contamination.

Abstract: Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected from the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.

Abstract: Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected into the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The solutions are initiated either by injecting the chemicals into an incoming DI water line or directly into the tank. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy.

Abstract: Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected from the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.

Abstract: Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected from the lower end of the tank and allowed to overflow at the upper end. One solution contains one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solutions contains highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.