Abstract: Disclosed are methods of preparing trialkyl Group VA metal compounds in high yield and high purity. Such trialkyl Group VA metal compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.

Abstract: Disclosed are methods of preparing trialkyl Group VA metal compounds in high yield and high purity. Such trialkyl Group VA metal compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.

Abstract: Trimethylindium with substantially no oxygen-containing impurities, either as byproduct or associated solvent, is synthesized according to the reaction:Me.sub.z InX.sub.(3-x) +(1-1.2)(3-z)Me.sub.3 Al+(1-1.2)(6-2z)MF.fwdarw.Me.sub.3 In+(1-1.2)(3-z)M(Me.sub.2 AlF.sub.2)+(1-1.2)(3-z)MXwhere the Xs are the same or different and are selected from the group consisting of Cl, Br, and I; M is selected from the group consisting of Na, K, Rb, and Cs; and z is 0, 1 or 2 in a hydrocarbon solvent, such as squalane.

Abstract: A chemical composition consists essentially ((t-amyl)GaS).sub.4. The chemical composition can be employed as a liquid precursor for metal organic chemical vapor deposition to thereby form a cubic-phase passivating/buffer film, such as gallium sulphide.

Abstract: The invention relates to continuous gas fluidized bed polymerization of olefins, especially ethylene, propylene, or mixtures of these with other alpha olefins, wherein the monomer-containing recycle gas employed to fluidize the bed is cooled to condense out at least some liquid hydrocarbon. The condensed liquid, which can be a monomer or an inert liquid, is separated from the recycle gas and is fed directly to the bed to produce cooling by latent heat of evaporation. The liquid feeding to the bed can be through gas-induced atomizer nozzles (FIG. 2), or through liquid-only nozzles. The process provides substantially improved productivity of gas fluidized bed polymerization of olefins.

Abstract: A method is disclosed for forming a passivating/buffer film on a substrate. The method includes heating the substrate to a temperature which is sufficient to cause a volatilized organometallic precursor to pyrolyze and thereby form a passivating/buffer film on a substrate. The organometallic precursor is volatilized at a precursor source. A carrier gas is directed from a carrier gas source across the precursor source to conduct the volatilized precursor from the precursor source to the substrate. The volatilized precursor pyrolyzes and is deposited onto the substrate, thereby forming the passivating/buffer film on the substrate. The passivating/buffer film can be a cubic-phase passivating/buffer film. An oxide layer can also be formed on the passivating/buffer film to thereby form a composite of the substrate, the passivating/buffer film and the oxide layer. Cubic-phase passivating/buffer films formed by the method of the invention can be lattice-matched with the substrate.