Patents by Inventor Michael Babb

Michael Babb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260006909
    Abstract: A dopant may included in one or more sacrificial layers, e.g., silicon layers or silicon germanium layers, used for forming nanoribbon transistors. Adding a dopant to a silicon germanium layer may cause the silicon germanium to be more stress neutral, to prevent relaxation after etching stacks of individuated nanoribbons. Alternatively, when added to one or more sacrificial layers of silicon, the doped silicon layers may counteract elastic stress from the silicon germanium layers. The dopant layers may be included at various positions in a stack of materials. The dopant layer may include one or more dopants selected from carbon, arsenic, boron, and phosphorus.
    Type: Application
    Filed: June 27, 2024
    Publication date: January 1, 2026
    Inventors: David KOHEN, Rambert NAHM, Glenn A. GLASS, Borna OBRADOVIC, Stephen M. CEA, Matthew V. METZ, Siddharth CHOUKSEY, Jessica M. TORRES, Peter WELLS, Susmita GHOSE, Michael BABB, Natalie BRIGGS
  • Publication number: 20250311322
    Abstract: Devices, transistor structures, systems, and techniques are described herein related to gate all around field effect transistors having a stack of nanoribbons (i.e., semiconductor structures) with thicknesses that are tuned to vary across the stack. The nanoribbon source-to-drain lengths are from a source interface to a drain interface with source and drain structures, respectively, and the thickness is orthogonal to the source-to-drain lengths in alignment with the vertical stacking of the nanoribbons. The nanoribbons have differing thicknesses across the stack of nanoribbons of the field effect transistor.
    Type: Application
    Filed: March 29, 2024
    Publication date: October 2, 2025
    Applicant: Intel Corporation
    Inventors: Michael Babb, Christopher P. Auth, Glenn Glass, Vivek Thirtha, Chen-Yi Su, William Hsu, Kawser Ahmed, Chung-Hsun Lin, Kelsey Jorgensen, Rodolfo Torres, Ian Yang
  • Publication number: 20250006737
    Abstract: A material stack comprising a plurality of bi-layers, each bi-layer comprising two semiconductor material layers, is fabricated into a transistor structure including a first stack of channel materials that is coupled to an n-type source and drain and in a vertical stack with a second stack of channel materials that is coupled to a p-type source drain. Within the first stack of channel material layers a first of two semiconductor material layers may be replaced with a first gate stack while within the second stack of channel materials a second of two semiconductor material layers may be replaced with a second gate stack.
    Type: Application
    Filed: June 29, 2023
    Publication date: January 2, 2025
    Applicant: Intel Corporation
    Inventors: Aryan Navabi-Shirazi, Michael Babb, Kai Loon Cheong, Cheng-Ying Huang, Mohammad Hasan, Leonard P. Guler, Marko Radosavljevic
  • Publication number: 20050058745
    Abstract: The present invention is concerned with a method for enhancing the flavor shelf life of beverages, including beer and other malt beverages, by incorporating Labiatae herb extracts either to the finished beverage or into a step in the manufacture of the beverage.
    Type: Application
    Filed: September 10, 2004
    Publication date: March 17, 2005
    Inventors: Randall Mennett, James Barren, Donald Berdahl, Paul Todd, Michael Babb