Abstract: A device and method for current detecting and discriminating is disclosed. The device includes a differential receiver configured to receive a current input, a positive-side Schmitt trigger in communication with the input stage, wherein the positive-side Schmitt trigger is configured to receive an output provided by the input stage, and wherein the positive-side Schmitt trigger is configured to create a positive-side Schmitt trigger output representative of the current input, and a negative-side Schmitt trigger in communication with the input stage, wherein the negative-side Schmitt trigger is configured to receive the output provided by the input stage, and wherein the negative-side Schmitt trigger is configured to create a negative-side Schmitt trigger output representative of the current input.

Abstract: A device for current detection is disclosed and includes a protection circuit having a current input provided via a positive input and a negative input arranged in parallel to the positive input, a pair of diodes communicatively coupling the positive input to the negative input, wherein the pair of diodes are configured to protect an operational amplifier from an overvoltage and negative voltages, and a peak detector in communication with the protection stage, wherein the peak detector is configured to receive an output provided by the operation amplifier of the protection stage, and wherein the peak detector is configured to create a peak detector output representative of the current input.

Abstract: In a method of forming a semiconductor device on a semiconductor substrate (100), a photoresist layer (102) is deposited on the semiconductor substrate; a window (106) is formed in the photoresist layer (102) by electron beam lithography; a conformal layer (108) is deposited on the photoresist layer (102) and in the window (106); and substantially all of the conformal layer (108) is selectively removed from the photoresist layer (102) and a bottom portion of the window to form dielectric sidewalls (110) in the window (106).

Abstract: A device and method for current detecting and discriminating is disclosed. The device includes a differential receiver configured to receive a current input, a positive-side Schmitt trigger in communication with the input stage, wherein the positive-side Schmitt trigger is configured to receive an output provided by the input stage, and wherein the positive-side Schmitt trigger is configured to create a positive-side Schmitt trigger output representative of the current input, and a negative-side Schmitt trigger in communication with the input stage, wherein the negative-side Schmitt trigger is configured to receive the output provided by the input stage, and wherein the negative-side Schmitt trigger is configured to create a negative-side Schmitt trigger output representative of the current input.

Abstract: A device for current detection is disclosed and includes a protection circuit having a current input provided via a positive input and a negative input arranged in parallel to the positive input, a pair of diodes communicatively coupling the positive input to the negative input, wherein the pair of diodes are configured to protect an operational amplifier from an overvoltage and negative voltages, and a peak detector in communication with the protection stage, wherein the peak detector is configured to receive an output provided by the operation amplifier of the protection stage, and wherein the peak detector is configured to create a peak detector output representative of the current input.

Abstract: In a method of forming a semiconductor device on a semiconductor substrate (100), a photoresist layer (102) is deposited on the semiconductor substrate; a window (106) is formed in the photoresist layer (102) by electron beam lithography; a conformal layer (108) is deposited on the photoresist layer (102) and in the window (106); and substantially all of the conformal layer (108) is selectively removed from the photoresist layer (102) and a bottom portion of the window to form dielectric sidewalls (110) in the window (106).

Abstract: In a method of forming a semiconductor device on a semiconductor substrate (100), a photoresist layer (102) is deposited on the semiconductor substrate; a window (106) is formed in the photoresist layer (102) by electron beam lithography; a conformal layer (108) is deposited on the photoresist layer (102) and in the window (106); and substantially all of the conformal layer (108) is selectively removed from the photoresist layer (102) and a bottom portion of the window to form dielectric sidewalls (110) in the window (106).

Abstract: An improved HEMT formed from a GaN material system is disclosed which has reduced gate leakage current relative to known GaN based HEMTs and eliminates the problem of current constrictions resulting from deposition of the gate metal over the step discontinuities formed over the gate mesa. The HEMT device is formed from a GaN material system. One or more GaN based materials are layered and etched to form a gate mesa with step discontinuities defining source and drain regions. In order to reduce the leakage current, the step discontinuities are back-filled with an insulating material, such as silicon nitride (SiN), forming a flat surface relative to the source and drain regions, to enable to the gate metal to lay flat. By back-filling the source and drain regions with an insulating material, leakage currents between the gate and source and the gate and drain are greatly reduced. In addition, current constrictions resulting from the deposition of the gate metal over a step discontinuity are virtually eliminated.

Abstract: Die of high aspect ratio formed in a hard wafer substrate are sawed out without requiring tape, obtaining high die yields. Preliminary to sawing the semiconductor die (3) from a sapphire wafer (2), the wafer is joined (20) to a silicon carrier substrate (6) by a thermoplastic layer (4) forming a unitary sandwich-like assembly. Sawing the die from the wafer follows. The thermoplastic is removed, and the die may be removed individually (50) from the silicon carrier substrate. Thermoplastic produces a bond that holds the die in place against the shear force exerted by the saw and by the stream of coolant (30).