Patents by Inventor Michael Beumer

Michael Beumer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • pGaN ENHANCEMENT MODE HEMTs WITH DOPANT DIFFUSION SPACER
    Publication number: 20220199816
    Abstract: III-N e-mode high electron mobility transistors (HEMTs) including a dopant diffusion spacer between an impurity-doped III-N material layer and a III-N polarization layer of the HEMT material stack. The spacer may be a substantially undoped III-N material, such as GaN. With the diffusion spacer, P-type impurities within the pGaN are setback from the polarization layer sufficiently to avoid significant levels of P-type impurities from entering the III-N material interface where the 2DEG resides. With the diffusion spacer, clustering of impurities near the 2DEG may be avoided and a III-N e-mode HEMT may achieve higher drive currents.
    Type: Application
    Filed: December 23, 2020
    Publication date: June 23, 2022
    Applicant: Intel Corporation
    Inventors: Michael Beumer, Robert Ehlert, Nicholas Minutillo, Michael Robinson, Patrick Wallace, Peter Wells