Abstract: An LED-based luminaire employs an LED module mounted to a housing. The LED module is advantageously configured to transmit heat generated by the LEDs across and/or through the module and to the housing for dispersal to the environment. LED modules can be configured with conductive or non-conductive cores, and may be configured to evacuate heat from one or both faces of the LED module. Further, multiple heat paths can be defined from components on an LED module to the housing and to the environment.

Abstract: An LED-based luminaire employs an LED module mounted to a housing. The LED module is advantageously configured to transmit heat generated by the LEDs across and/or through the module and to the housing for dispersal to the environment. LED modules can be configured with conductive or non-conductive cores, and may be configured to evacuate heat from one or both faces of the LED module. Further, multiple heat paths can be defined from components on an LED module to the housing and to the environment.

Abstract: The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber of a CVD reactor. At least one first and one second reaction gas are each led into a gas outlet area in an input area of the process chamber, by means of separate delivery lines. The gas outlet areas lie one above the other between the floor of the process chamber and the cover of the process chamber and have different heights. The first reaction gas flows out of the gas outlet area that is situated next to the process chamber floor, optionally together with a carrier gas. A carrier gas is added at least to the second reaction gas, which flows out of the gas outlet area lying further away from the process chamber floor.

Abstract: The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber (I) of a CVD reactor. At least one first (GI) and one second (02) reaction gas are each led into a gas outlet area (8, 9) in an input area (E) of the process chamber (1), by means of separate delivery lines (6,7). The gas outlet areas (8, 9) lie one above the other between the floor (2) of the process chamber and the cover (3) of the process chamber and have different heights (Hi, H2). The first reaction gas (01) flows out of the gas outlet area (8) that is situated next to the process chamber floor (2), optionally together with a carrier gas (Ti). A carrier gas (T2) is added at least to the second reaction gas (02), which flows out of the gas outlet area (9) lying further away from the process chamber floor (2).