Patents by Inventor Michael Brendan Power
Michael Brendan Power has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7767840Abstract: Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.Type: GrantFiled: August 12, 2008Date of Patent: August 3, 2010Assignee: Rohm and Haas Electronic Materials LLCInventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power
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Publication number: 20090156852Abstract: Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.Type: ApplicationFiled: August 12, 2008Publication date: June 18, 2009Applicant: Rohm and Haas Electronic Materials LLCInventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power
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Patent number: 7413776Abstract: A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group IV metal on the substrate is provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.Type: GrantFiled: April 2, 2004Date of Patent: August 19, 2008Assignee: Rohm and Haas Electronic Materials LLCInventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power
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Patent number: 6956127Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3?n, where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.Type: GrantFiled: January 17, 2003Date of Patent: October 18, 2005Assignee: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Artashes Amamchyan, Ronald L. DiCarlo, Jr.
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Patent number: 6939983Abstract: A method of preparing Group VA organometal compounds in high yield and high purity by the reaction of a Grignard reagent with a Group VA metal halide in certain ethereal solvents is provided. A method of preparing Group VA organometal hydrides is also provided.Type: GrantFiled: May 7, 2004Date of Patent: September 6, 2005Assignee: Rohm and Haas Electronic Materials, LLCInventors: Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan, Michael Brendan Power, Ronald L. DiCarol, Jr., James Edward Felton
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Publication number: 20040194703Abstract: Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.Type: ApplicationFiled: April 2, 2004Publication date: October 7, 2004Applicant: Rohm and Haas Electronic Materials, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power
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Patent number: 6770769Abstract: Trialkylindium compounds are prepared by reacting indium trihalide with a trialkylaluminum compound in the presence of a fluoride salt, wherein the molar ratio of the indium trihalide to the fluoride salt is at least 1:4.5. Such trialkylindium compounds are particularly suitable for use in metalorganic vapor phase epitaxy.Type: GrantFiled: April 5, 2003Date of Patent: August 3, 2004Assignee: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Ronald L. DiCarlo, Jr.
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Publication number: 20030199704Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3-n where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.Type: ApplicationFiled: November 23, 2002Publication date: October 23, 2003Applicant: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Artashes Amamchyan
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Publication number: 20030191333Abstract: Trialkylindium compounds are prepared by reacting indium trihalide with a trialkylaluminum compound in the presence of a fluoride salt, wherein the molar ratio of the indium trihalide to the fluoride salt is at least 1:4.5. Such trialkylindium compounds are particularly suitable for use in metalorganic vapor phase epitaxy.Type: ApplicationFiled: April 5, 2003Publication date: October 9, 2003Applicant: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Ronald L. Dicarlo
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Publication number: 20030181746Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3−n , where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.Type: ApplicationFiled: January 17, 2003Publication date: September 25, 2003Applicant: Shipley Company, L.L.C.Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Artashes Amamchyan, Ronald L. DiCarlo