Abstract: An inventive composition for the treatment of hyperhidrosis comprises an active ingredient, namely aluminum chloride in the range of 14.25% to 15.75% by weight and water in the range of about 75% to 80% by weight. The solution of the inventive composition is applied to a body via a pre-soaked towelette by dabbing the towelette over the parts of the body susceptible to excessive sweating. The composition includes a skin protein that binds with the active ingredient to effectively block the pores and sweat glands to control excessive perspiration. The solution of the composition is applied in the evening before bedtime, and immediately after showering in hot water, so that the pores are most receptive to the solution and the composition effectively blocks the pores.

Abstract: Techniques for adjusting the voltage across an active filter element include a controlled circuit element and a control circuit element adapted to control the voltage across the controlled circuit element to increase transient load response and to reduce power dissipation.

Abstract: Performance wear made with hydrophobic fabric that maximizes evaporative cooling of the human body by maintaining perspiration and moisture at the surface of the skin whereby heat is more readily transferred from the skin by evaporative cooling thereby providing more effective core temperature regulation. The fabric may be natural or synthetic fiber or fiber blends having hydrophobic (e.g. water resistant) characteristics. The fabric is used to produce performance wear whereby the hydrophobic characteristics provide moisture management function by preventing moisture from migrating from the skin to the fabric. The hydrophobic performance fabrics are also preferably impregnated with antimicrobials, such as antibacterial, anti-odor, and antifungal substances, as well as flame retardant substances. The performance wear may comprise compression wear formed of a blend of polyester and spandex to provide increased movement, comfort, and fit.

Abstract: Techniques for adjusting the voltage across an active filter element include a controlled circuit element and a control circuit element adapted to control the voltage across the controlled circuit element to increase transient load response and to reduce power dissipation.

Abstract: A III-nitride semiconductor device which includes a charged floating gate electrode.

Abstract: A semiconductor package that includes a semiconductor die and a heat spreader thermally coupled to the semiconductor and disposed at least partially within the molded housing of the package.

Abstract: Processes are described for forming very thin semiconductor die (1 to 10 microns thick) in which a thin layer of the upper surface of the wafer is processed with junction patterns and contacts while the wafer bulk is intact. The top surface is then contacted by a rigid wafer carrier and the bulk wafer is then ground/etched to an etch stop layer at the bottom of the thin wafer. A thick bottom contact is then applied to the bottom surface and the top wafer carrier is removed. All three contacts of a MOSFET may be formed on the top surface in one embodiment or defined by the patterning of the bottom metal contact.

Abstract: A method of fabricating a HI-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods.

Abstract: A power semiconductor device that includes a passive component, e.g., a capacitor, mechanically and electrically coupled to at least one pole thereof.

Abstract: A III-nitride semiconductor device which includes a charged gate insulation body.

Abstract: In accordance with one embodiment of the invention, a semiconductor device includes conductive pad areas, and each conductive pad area is electrically connected to a plurality of metal traces which are in turn each connected to diffusions. A conductive contact element such as a solder bump or via can be attached to each conductive pad area such that the contact elements are arranged in a repeating pattern having a first pitch. The semiconductor device can also include translation traces, and each translation trace can be electrically connected to two or more of the conductive contact elements. Each translation trace can have a interconnect element attached thereto. The interconnect elements can be arranged in a repeating pattern having a second pitch substantially greater than the first pitch.

Abstract: In accordance with one embodiment of the invention, a semiconductor device includes conductive pad areas, and each conductive pad area is electrically connected to a plurality of metal traces which are in turn each connected to diffusions. A conductive contact element such as a solder bump or via can be attached to each conductive pad area such that the contact elements are arranged in a repeating pattern having a first pitch. The semiconductor device can also include translation traces, and each translation trace can be electrically connected to two or more of the conductive contact elements. Each translation trace can have a interconnect element attached thereto. The interconnect elements can be arranged in a repeating pattern having a second pitch substantially greater than the first pitch.

Abstract: In accordance with one embodiment of the invention, a semiconductor device includes conductive pad areas, and each conductive pad area is electrically connected to a plurality of metal traces which are in turn each connected to diffusions. A conductive contact element such as a solder bump or via can be attached to each conductive pad area such that the contact elements are arranged in a repeating pattern having a first pitch. The semiconductor device can also include translation traces, and each translation trace can be electrically connected to two or more of the conductive contact elements. Each translation trace can have a interconnect element attached thereto. The interconnect elements can be arranged in a repeating pattern having a second pitch substantially greater than the first pitch.

Abstract: Techniques for reducing noise generated by a circuit include a common mode filter and a differential mode filter. The common mode filter includes an input for sensing a common mode signal between a power source and the circuit, an output, and active circuitry for producing an offset signal on the output. The differential mode filter includes an input, an output, and active circuitry for sensing a differential mode signal and producing variations in resistance between the input and output to offset the differential signal.

Abstract: A process for producing hydrophobic cotton fabric useful as material for forming a wide variety of useful articles. The process includes the steps of (1) bleaching the cotton fabric with a suitable optical whitener; (2) affixing the fabric to a conveying machine; (3) applying approximately 7 lbs. of water resistance substance for each approximately 100 lbs. of fabric by conveying the fabric through a pad bath; (4) conveying the fabric through a tenter frame machine having a heating chamber set a approximately 340° F.; (4) conveying the treated fabric through the heating chamber at a speed of approximately 17 yards per minute; (5) repeating step 4 a second time to effect curing of the chemicals thereby resulting in a water-resistant cotton fabric. Alternate methods are disclosed for treating fabric with various antimicrobial, antifungal, anti-odor and/or anti-stain substances.

Abstract: Techniques for reducing noise generated by a circuit include a common mode filter and a differential mode filter. The common mode filter includes an input for sensing a common mode signal between a power source and the circuit, an output, and active circuitry for producing an offset signal on the output. The differential mode filter includes an input, an output, and active circuitry for sensing a differential mode signal and producing variations in resistance between the input and output to offset the differential signal.

Abstract: A process for producing hydrophobic cotton fabric useful as material for forming a wide variety of useful articles. The process includes the steps of (1) bleaching the cotton fabric with a suitable optical whitener; (2) affixing the fabric to a conveying machine; (3) applying approximately 7 lbs. of water resistance substance for each approximately 100 lbs. of fabric by conveying the fabric through a pad bath; (4) conveying the fabric through a tenter frame machine having a heating chamber set a approximately 340° F.; (4) conveying the treated fabric through the heating chamber at a speed of approximately 17 yards per minute; (5) repeating step 4 a second time to effect curing of the chemicals thereby resulting in a water-resistant cotton fabric. Alternate methods are disclosed for treating fabric with various antimicrobial, antifungal, anti-odor and/or anti-stain substances.

Abstract: In accordance with one embodiment of the invention, a semiconductor device includes conductive pad areas, and each conductive pad area is electrically connected to a plurality of metal traces which are in turn each connected to diffusions. A conductive contact element such as a solder bump or via can be attached to each conductive pad area such that the contact elements are arranged in a repeating pattern having a first pitch. The semiconductor device can also include translation traces, and each translation trace can be electrically connected to two or more of the conductive contact elements. Each translation trace can have a interconnect element attached thereto. The interconnect elements can be arranged in a repeating pattern having a second pitch substantially greater than the first pitch.

Abstract: A process for producing hydrophobic cotton fabric useful as material for forming a wide variety of useful articles. The process includes the steps of (1) bleaching the cotton fabric with a suitable optical whitener; (2) affixing the fabric to a conveying machine; (3) applying approximately 7 lbs. of water resistance substance for each approximately 100 lbs. of fabric by conveying the fabric through a pad bath; (4) conveying the fabric through a tenter frame machine having a heating chamber set a approximately 340° z,900 ; (4) conveying the treated fabric through the heating chamber at a speed of approximately 17 yards per minute; (5) repeating step 4 a second time to effect curing of the chemicals thereby resulting in a water-resistant cotton fabric. Alternate methods are disclosed for treating fabric with various antimicrobial, antifungal, anti-odor and/or anti-stain substances.