Patents by Inventor Michael Brockley

Michael Brockley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8829559
    Abstract: In a nitride semiconductor light-emitting device having an n-side and a p-side electrode pad formed on the same side of a substrate wherein current distribution in the light-emitting device is improved by forming branch electrodes extended from the p-side electrode pad (and the n-side electrode pad), when sheet resistance values of n-side and p-side layers in the device are low enough, contact resistance between a p-type nitride semiconductor layer and a current diffusion layer of a transparent conductive film formed thereon is reduced and in-plane distribution of the sheet resistance is made uniform whereby improving the optical output, by increasing in a prescribed condition the sheet resistance value of the current diffusion layer.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: September 9, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yufeng Weng, Michael Brockley
  • Publication number: 20120248490
    Abstract: In a nitride semiconductor light-emitting device having an n-side and a p-side electrode pad formed on the same side of a substrate wherein current distribution in the light-emitting device is improved by forming branch electrodes extended from the p-side electrode pad (and the n-side electrode pad), when sheet resistance values of n-side and p-side layers in the device are low enough, contact resistance between a p-type nitride semiconductor layer and a current diffusion layer of a transparent conductive film formed thereon is reduced and in-plane distribution of the sheet resistance is made uniform whereby improving the optical output, by increasing in a prescribed condition the sheet resistance value of the current diffusion layer.
    Type: Application
    Filed: March 29, 2012
    Publication date: October 4, 2012
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Yufeng WENG, Michael Brockley
  • Publication number: 20120098023
    Abstract: A nitride semiconductor light-emitting device includes at least one n-type semiconductor layer, an active layer and at least one p-type semiconductor layer within a rectangle nitride semiconductor region on a substrate. The n-type semiconductor layer has a partial exposed area, a p-side branch electrode integral with a p-side electrode pad formed on a current diffusion layer formed on the p-type semiconductor layer, an n-side branch electrode integral with an n-side electrode pad formed on the partial exposed area of the n-type semiconductor layer, the p-side and n-side branch electrodes extend parallel to each other along two opposite sides of the semiconductor region, and conditions of 0.3<M/L<1.1 and L<Lmax are satisfied; L is the distance between centers of the p-side and n-side electrode pads, M is the distance between the p-side and n-side branch electrodes, and Lmax represents a distance between the centers of the p-side and n-side electrode pads.
    Type: Application
    Filed: October 11, 2011
    Publication date: April 26, 2012
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Yufeng Weng, Michael Brockley